Articles you may be interested inInsulator-quantum Hall conductor transition in high electron density gated InGaAs/InAlAs quantum wells J. Appl. Phys. 108, 063701 (2010); 10.1063/1.3486081 Molecular beam epitaxy of high mobility In 0.75 Ga 0.25 As for electron spin transport applications Magnetoresistance in high-density two-dimensional electron gas confined in InAlAs/InGaAs quantum well Appl. Phys. Lett. 94, 152107 (2009); 10.1063/1.3119664Controlling electric field and electron density in a double-gated GaAs/AlGaAs quantum well Improvement of the electron density in the channel of an AlGaAs/GaAs heterojunction by introducing Si δ doping in the quantum well Quantum oscillations of dissipative resistance are observed in response to electric current applied to a GaAs quantum well with variable two dimensional electron density placed in quantizing magnetic fields. At a fixed magnetic field, the period of the current induced oscillations depends linearly on the electron density. The observed behavior is in accord with a recently proposed model that considers the DC bias-induced spatial re-population of Landau levels as the origin of the resistance oscillations. It indicates the important role of the electron screening in the vicinity of the quantum well, which significantly enhances the nonlinear response. V C 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4790374] 053709-2 Dietrich et al.