Spatial Variations in the Epitaxial Growth of InP and InGaAs by Trichloride VPE and Their Physical and Chemical Origins

Abstract

The availability of automated techniques makes possible very detailed characterization of III-V epitaxial layers. We report results of a study of the growth of indium phosphide and indium gallium arsenide layers on 50 mm diam indium phosphide substrates by trichloride vapor phase epitaxy under a variety of conditions and some effects of reactor parameters on the growth process from a wafer-scale point of view. It is shown that the patterns of variation observed in twodimensional wafer-scale growth rate maps can be correlated with data obtained from series of runs in which conditions were systematically varied. The results are interpreted in terms of the underlying physics and chemistry of the growth process.

(Europe Section Heinz Gerischer Award) The Long Reach of Electrochemistry: Semiconductors, Metallization and Energy Storage

“…In the 1980s, the availability of automated equipment and software for infrared interferometric mapping made it possible for us to extensively characterize the thickness of a III-V epitaxial layer over the entire surface of a 50 mm diameter wafer in a reasonable period of time. 12,17 The growth rates measured in this way in a Chloride VPE reactor are plotted against temperature in Figure 9 for InP and InGaAs lattice-matched to InP. It can be seen that, in both cases, the growth rate increases at lower temperatures but reaches a maximum and then decreases at higher temperatures.…”

“…Although metal-organic chemical vapour deposition (MOCVD) eventually became the vapor phase technique of choice, Chloride vapour phase epitaxy (VPE) and Hydride VPE were initially used for epitaxy of III-V semiconductors. [7][8][9][10][11][12][13][14][15][16][17]68 Molecular beam epitaxy (MBE) was developed by Al Cho in 1970 and provides an extremely useful technique for the growth of very thin layers. 16…”

“…My PhD research with the late L. D. (Declan) Burke began in 1971 and I discuss a few examples of our work on oxygen electrochemistry on ruthenium and iridium from that era. [2][3][4][5][6] This is followed by some examples of research on lithium batteries and compound semiconductors at Bell Laboratories [7][8][9][10][11][12][13][14][15][16][17][18] beginning in 1979. I then discuss some of our work at the University of Limerick on electrochemical etching and nanopore formation on III-V semiconductors, [19][20][21][22][23][24][25][26][27][28][29][30] a particularly appropriate topic for this presentation in view of Professor Gerischer's 31 extensive pioneering contributions to semiconductor electrochemistry.…”

The Light Fantastic: Materials and Processing Technologies for Photonics

“…When the torch reaches the end of the tube, it is quickly moved back to the beginning and the entire process is repeated. The gas composition on each traverse of the torch is d i '=AR COATING hv FIGURE 7. InGaAs separated absorption and multiplication avalanche photodetector (SAM-APD) (20).…”