Spatially resolvable optical emission spectrometer for analyzing density uniformity of semiconductor process plasma

Oh, Changhoon; Ryoo, H.; Lee, Hyungwoo; Kim, Se Yeon; Yi, Hun Jung; Hahn, Jae Won

doi:10.1063/1.3488104

Cited by 14 publications

(3 citation statements)

References 20 publications

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“…The modified optical layout of the OES system originally devised by Oh et al [26] in a previous work is depicted in Figure 2. The OES system is equipped with three UV fused silica lenses (imaging lens: diameter of 25 mm and focal length of 140 mm, delivery lens: diameter of 12.7 mm and focal length of 20 mm) to image the target black body radiation which can be assumed to be a volume source, aperture stops to block stray light originating from sources other than the object plane under measurement, and one pinhole (with a diameter of 75 mm).…”

Section: Oes System Measurements Of Uv Signaturesmentioning

confidence: 99%

Calibration and Uncertainty Analysis of an Optical Emission Spectrometer Measuring the Absolute Spectral Radiant Exitance of UV Signatures

Lee

Hahn

2012

Propellants Explo Pyrotec

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An optical emission spectrometer (OES) was designed and constructed to detect the absolute spectral radiant exitance of UV signatures for a wavelength range of 240 nm to 440 nm. Using a directly heated graphite black body furnace operating at a temperature of 3000 K, the spectral response of the OES in the UV range was calibrated. To evaluate the performance of the OES system, the emission spectra of molecules were measured in a butane flame and the absolute emissions of the UV signatures were calculated. The uncertainty of the absolute measurement of the UV signature was analyzed by considering various uncertainty budgets, and the total uncertainty of the OES was found to be 1.66 %.

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Section: Oes System Measurements Of Uv Signaturesmentioning

confidence: 99%

Calibration and Uncertainty Analysis of an Optical Emission Spectrometer Measuring the Absolute Spectral Radiant Exitance of UV Signatures

Lee

Hahn

2012

Propellants Explo Pyrotec

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“…In response to this challenge, there is a need for new methods to determine the processing window based on plasma parameter measurements, moving away from the traditional wasteful approach. Among the crucial measurements for understanding the state of the processing plasma, the electron density is considered the most fundamental plasma parameter that determines the state of a plasma, including factors such as plasma potential, the number of radical species and ions contributing to etching or deposition, and spatial uniformity [5][6][7]. Achieving precise measurement of plasma density is imperative for plasma equipment and manufacturing industries.…”

Section: Introductionmentioning

confidence: 99%

Computational Study on Transmission Spectra Considering Coaxial Cable of Cutoff Probes

Yeom,

Chae,

Kim

et al. 2024

Appl. Sci. Converg. Technol.

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As nanoelectronic devices continue to shrink in response to demands for smaller and faster low-power, high-density devices, wasteful fabrication techniques are being replaced with methods that predetermine processing windows based on plasma parameter measurements. A cutoff probe comprising coaxial cables wrapped in Teflon is typically used for this measurement. However, because Teflon can be destroyed under highdensity plasma conditions, a change in the dielectric material of the coaxial cable may be considered for process plasma or high-density plasma measurements. However, the nature of these changes has not been examined. Hence, this study analyzes the plasma measurement characteristics of a cutoff probe using electromagnetic wave simulations and a plasma equivalent circuit model focusing on the dielectric permittivity and thickness of the coaxial cable-based cutoff probe. According to the results, as the dielectric constant of the insulator of the coaxial cable increased from 1 to 20, the transmission intensity at the cutoff frequency decreased from -68 to -81 dB. Furthermore, with the increased thickness of the insulator, the transmission intensity at the cutoff frequency increased from -80 to -64 dB. The characteristic changes are explained using a circuit model that verifies that changes to the insulator's dielectric constant and thickness affect the characteristic impedance of the cable, but not the plasma density measured by the cutoff probe. Nevertheless, the intensity of the observed transmission spectrum is affected. Hence, these findings are expected to contribute to the optimization of cutoff probes used for high-density plasma parameter measurements.

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“…Thus enhancing the macroscopic plasma uniformity is a primary goal and numerous etching-process steps are applied during chip-integration flow. Moreover, the researchers are now interested in monitoring plasma processes using in-situ sensors, in order to match the plasma uniformity with the wafer uniformity [6,7]. Optical emission spectroscopy represents a non-invasive technique for monitoring the intensity of plasma emission, which has been widely used for diagnosing plasma and monitoring its processes.…”

Section: Introductionmentioning

confidence: 99%

Silicon photonic grating coupler for monitoring optical emission of plasma

Lee¹,

Sung²,

Sang³

2018

Ukr. J. Phys. Opt.

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An optical waveguide and a grating coupler based on silicon photonics are designed and fabricated. The device is intended for monitoring the spectral line 777 nm of oxygen plasma, which corresponds to electron relaxation of oxygen atoms in the plasma. To provide a maximum surface-coupling efficiency, we optimize the thickness of silicon-oxide cladding and the geometry of the grating coupler, using finite differential time-domain simulations. Two methods are used when fabricating a silicon photonic chip, a micro-fabrication with electron-beam lithography and a semiconductor-based process that employs a 248 nm optical lithography technology. We suggest our coupler as a conceptual approach to onwafer photon-collecting devices designed for studying glow-discharge plasmas.

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Spatially resolvable optical emission spectrometer for analyzing density uniformity of semiconductor process plasma

Cited by 14 publications

References 20 publications

Calibration and Uncertainty Analysis of an Optical Emission Spectrometer Measuring the Absolute Spectral Radiant Exitance of UV Signatures

Calibration and Uncertainty Analysis of an Optical Emission Spectrometer Measuring the Absolute Spectral Radiant Exitance of UV Signatures

Computational Study on Transmission Spectra Considering Coaxial Cable of Cutoff Probes

Silicon photonic grating coupler for monitoring optical emission of plasma

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