Spatially resolved dark count rate of SiPMs

Engelmann, Eugen; Popova, E.; Vinogradov, Sergey

doi:10.1140/epjc/s10052-018-6454-0

Cited by 13 publications

(10 citation statements)

References 11 publications

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“…This publication aims to study the emission spectra of the secondary photon emission outside the SiPM and its absolute secondary photon yield: number of photons (γ) emitted per charge carrier (e − ). Additionally, we investigate the uniformity of the light production over the entire SiPM surface area, identifying regions with heightened light emission intensity (hotspots), in agreement with other studies [22]. For this publication, we focused on two SiPMs, considered as photo-sensor candidates for the nEXO experiment: one Fondazione Bruno Kessler (FBK) VUVHD Low Field (LF) Low After Pulse (Low AP) SiPM (VUV-HD3) and one Hamamatsu Photonics (HPK) VUV4 Multi-Pixel Photon Counter (MPPC).…”

Section: Introductionsupporting

confidence: 84%

“…The z -scales in Figure 4 a,b show that the HPK VUV4 SiPM tends to have brighter regions with enhanced light intensity (hotspots) compared to the FBK VUV-HD3, for which the hotspots appear more randomly distributed and within single SPADs. More generally the RMS of the light emission of the HPK MPPC is 3.3 times greater than that of the FBK SiPM, and behaves comparably to the one reported in [ 22 ] for KETEK PM3350T STD/MOD SiPM.…”

Section: Imaging Of the Biased Sipmsupporting

confidence: 76%

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Characterisation of SiPM Photon Emission in the Dark

McLaughlin

Gallina

Retière

et al. 2021

Sensors

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In this paper, we report on the photon emission of Silicon Photomultipliers (SiPMs) from avalanche pulses generated in dark conditions, with the main objective of better understanding the associated systematics for next-generation, large area, SiPM-based physics experiments. A new apparatus for spectral and imaging analysis was developed at TRIUMF and used to measure the light emitted by the two SiPMs considered as photo-sensor candidates for the nEXO neutrinoless double-beta decay experiment: one Fondazione Bruno Kessler (FBK) VUV-HD Low Field (LF) Low After Pulse (Low AP) (VUV-HD3) SiPM and one Hamamatsu Photonics K.K. (HPK) VUV4 Multi-Pixel Photon Counter (MPPC). Spectral measurements of their light emissions were taken with varying over-voltage in the wavelength range of 450–1020 nm. For the FBK VUV-HD3, at an over-voltage of 12.1±1.0 V, we measured a secondary photon yield (number of photons (γ) emitted per charge carrier (e−)) of (4.04±0.02)×10−6γ/e−. The emission spectrum of the FBK VUV-HD3 contains an interference pattern consistent with thin-film interference. Additionally, emission microscopy images (EMMIs) of the FBK VUV-HD3 show a small number of highly localized regions with increased light intensity (hotspots) randomly distributed over the SiPM surface area. For the HPK VUV4 MPPC, at an over-voltage of 10.7±1.0 V, we measured a secondary photon yield of (8.71±0.04)×10−6γ/e−. In contrast to the FBK VUV-HD3, the emission spectra of the HPK VUV4 did not show an interference pattern—likely due to a thinner surface coating. The EMMIs of the HPK VUV4 also revealed a larger number of hotspots compared to the FBK VUV-HD3, especially in one of the corners of the device. The photon yield reported in this paper may be limited if compared with the one reported in previous studies due to the measurement wavelength range, which is only up to 1020 nm.

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Section: Introductionsupporting

confidence: 84%

Section: Imaging Of the Biased Sipmsupporting

confidence: 76%

Characterisation of SiPM Photon Emission in the Dark

McLaughlin

Gallina

Retière

et al. 2021

Sensors

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“…The output of SiPM sensors depends on the selected supply voltage that is in the range of 30–60 V [ 103 ]. Increasing the supply voltage increases the gain, but also increases the dark count, crosstalk, and after-pulses, which all lower the SNR [ 130 , 131 , 132 , 133 ].…”

Section: Detection Setups and Optical Sensor Technologymentioning

confidence: 99%

Optical Detection Methods for High-Throughput Fluorescent Droplet Microflow Cytometry

et al. 2021

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High-throughput microflow cytometry has become a focal point of research in recent years. In particular, droplet microflow cytometry (DMFC) enables the analysis of cells reacting to different stimuli in chemical isolation due to each droplet acting as an isolated microreactor. Furthermore, at high flow rates, the droplets allow massive parallelization, further increasing the throughput of droplets. However, this novel methodology poses unique challenges related to commonly used fluorometry and fluorescent microscopy techniques. We review the optical sensor technology and light sources applicable to DMFC, as well as analyze the challenges and advantages of each option, primarily focusing on electronics. An analysis of low-cost and/or sufficiently compact systems that can be incorporated into portable devices is also presented.

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“…This distribution presents a plateau below

and a fraction of defective SPADs close to 10%. These noisy SPADs are the result of abrupt variations in the doping concentration and defects in the crystal lattice that lead to higher avalanche probabilities and enhanced photo-emission [ 32 , 33 , 34 ]. Consequently, it is mandatory to model the SPAD yield as a function of the active area to quantify its effect in sensitivity.…”

Section: Pixel Optimizationmentioning

confidence: 99%

Architecture-Level Optimization on Digital Silicon Photomultipliers for Medical Imaging

Bandi

Ilisie

Vornicu

et al. 2021

Sensors

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Silicon photomultipliers (SiPMs) are arrays of single-photon avalanche diodes (SPADs) connected in parallel. Analog silicon photomultipliers are built in custom technologies optimized for detection efficiency. Digital silicon photomultipliers are built in CMOS technology. Although CMOS SPADs are less sensitive, they can incorporate additional functionality at the sensor plane, which is required in some applications for an accurate detection in terms of energy, timestamp, and spatial location. This additional circuitry comprises active quenching and recharge circuits, pulse combining and counting logic, and a time-to-digital converter. This, together with the disconnection of defective SPADs, results in a reduction of the light-sensitive area. In addition, the pile-up of pulses, in space and in time, translates into additional efficiency losses that are inherent to digital SiPMs. The design of digital SiPMs must include some sort of optimization of the pixel architecture in order to maximize sensitivity. In this paper, we identify the most relevant variables that determine the influence of SPAD yield, fill factor loss, and spatial and temporal pile-up in the photon detection efficiency. An optimum of 8% is found for different pixel sizes. The potential benefits of molecular imaging of these optimized and small-sized pixels with independent timestamping capabilities are also analyzed.

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Spatially resolved dark count rate of SiPMs

Cited by 13 publications

References 11 publications

Characterisation of SiPM Photon Emission in the Dark

Characterisation of SiPM Photon Emission in the Dark

Optical Detection Methods for High-Throughput Fluorescent Droplet Microflow Cytometry

Architecture-Level Optimization on Digital Silicon Photomultipliers for Medical Imaging

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