Direct time-of-flight (d-ToF) estimation with high frame rate requires the incorporation of a time-to-digital converter (TDC) at pixel level. A feasible approach to a compact implementation of the TDC is to use the multiple phases of a voltage-controlled ring-oscillator (VCRO) for the finest bits. The VCRO becomes central in determining the performance parameters of a d-ToF image sensor. In this paper we are covering the modeling, design and measurement of a CMOS pseudo-differential VCRO. The oscillation frequency, the jitter due to mismatches and noise and the power consumption are analytically evaluated. This design has been incorporated into a 64×64-pixel array. It has been fabricated in a 0.18µm standard CMOS technology. Occupation area is 28×29μm 2 and power consumption is 1.17mW at 850MHz. The measured gain of the VCRO is of 477MHz/V with a frequency tuning range of 53%. Moreover it features a linearity of 99.4% over a wide range of control frequencies, namely from 400MHz to 850MHz. The phase noise is of-102dBc/Hz at 2MHz offset frequency from 850MHz. The influence of these parameters in the performance of the TDC has been measured. The minimum time bin of the TDC is 147ps with a RMS DNL/ INL of 0.13/ 1.7LSB.

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Avalanche diodes operating in Geiger mode are able to detect single photon events. They can be employed to photon counting and time-of-flight estimation. In order to ensure proper operation of these devices, the avalanche current must be rapidly quenched, and, later on, the initial equilibrium must be restored. In this paper, we present an active quenching/recharge circuit specially designed to be integrated in the form of an array of single-photon avalanche diode (SPAD) detectors. Active quenching and recharge provide benefits like an accurately controllable pulse width and afterpulsing reduction. In addition, this circuit yields one of the lowest reported area occupations and power consumptions. The quenching mechanism employed is based on a positive feedback loop that accelerates quenching right after sensing the avalanche current. We have employed a current starved inverter for the regulation of the hold-off time, which is more compact than other reported controllable delay implementations. This circuit has been fabricated in a standard 0.18 μm complementary metal-oxide-semiconductor (CMOS) technology. The SPAD has a quasi-circular shape of 12 μm diameter active area. The fill factor is about 11%. The measured time resolution of the detector is 187 ps. The photon-detection efficiency (PDE) at 540 nm wavelength is about 5% at an excess voltage of 900 mV. The break-down voltage is 10.3 V. A dark count rate of 19 kHz is measured at room temperature. Worst case post-layout simulations show a 117 ps quenching and 280 ps restoring times. The dead time can be accurately tuned from 5 to 500 ns. The pulse-width jitter is below 1.8 ns when dead time is set to 40 ns.