Spatially Resolved Doping Concentration and Nonradiative Lifetime Profiles in Single Si-Doped InP Nanowires Using Photoluminescence Mapping

Wang, Fan; Gao, Qiang; Peng, Kun; Li, Zhe; Li, Zi-Yuan; Guo, Yanan; Fu, Lan; Smith, L. M.; Tan, Hark Hoe; Jagadish, Chennupati

doi:10.1021/nl504929n

Cited by 43 publications

(78 citation statements)

References 54 publications

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“…It is well known that due to background impurity doping, the unintentionally doped InP grown by MOVPE is normally n‐type . We also found that the InP NWs grown by the SAE technique exhibit a relatively high background doping density of ~10 17 cm −3 , which has to be taken into consideration when designing p‐n junction for solar cell applications. In this work, three different InP NWSC structures grown on p‐doped InP substrate by SA‐MOPE, namely i(n − )‐n, p‐i(n − )‐n, and p‐p − ‐n, were designed and characterized using EBIC technique.…”

Section: Introductionmentioning

confidence: 72%

“…Sample III (p‐p − ‐n + ) was grown with a p‐doped section (1.5 minutes) on the p + substrate followed by a lightly p‐doped section (5 minutes) and a heavily n‐doped section (1.5 minutes). The doping concentrations of both n‐doped and undoped sections were calibrated based on our previous doping study . However, despite a high doping concentration aimed for the bottom p‐region for samples II and III, we find it difficult to determine the p‐type doping concentration using both the photoluminescence (PL) and electrical measurements which were previously used to determine the n‐type doping concentration with great success, implying that the p‐region of our NWs may be only lightly doped (<1 × 10 17 cm −3 ) despite that a high diethylzinc (DEZn) flow rate was used.…”

Section: Resultsmentioning

confidence: 99%

“…C, The IQE as a function of excitation power from samples I, II, and III. The curves are calculated from fitting the carrier rate equation using the method described by Fan et al [Colour figure can be viewed at wileyonlinelibrary.com]…”

Section: Resultsmentioning

confidence: 99%

“…However, due to the complex nature of NW growth, background doping, growth rate, and dopant diffusion may vary greatly during the growth of different NWSC structures with different p, i, n‐segment designs. As a result, the junction position and size may significantly deviate from the original design and moreover, the material quality (both optical and electrical) of the NWSC structures may also vary significantly, making it challenging to understand and optimize the NWSC performance. Therefore, it is highly desirable to employ a technique which is able to directly visualize the width and position of the p‐n junction for device optimization.…”

Section: Introductionmentioning

confidence: 99%

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Axial p‐n junction design and characterization for InP nanowire array solar cells

Gao

et al. 2018

Progress in Photovoltaics

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In this work, InP nanowire (NW) array solar cells with different axial p‐i‐n junction designs were investigated. The optical properties of the different NW structures were characterized through a series of microphotoluminescence measurements to extract important material parameters such as minority carrier lifetimes and internal quantum efficiencies. A glancing angle sputtering deposition technique has been developed to enable a direct visualization of the p‐n junctions in the vertical array of InP NW solar cells (NWSCs) using electron beam‐induced current (EBIC) technique. Based on EBIC and electrical simulation, it is found that the background doping in NWSC significantly affects the junction position. By modifying the junction design, the width and position of the p‐n junction can be varied effectively. By employing a p‐p−‐n structure, a high junction position (>1 μm from the substrate) and wide depletion width have been achieved as confirmed by EBIC measurement. Moreover, the NW growth substrate does not show any influence on the device behavior due to the fully decoupled junction position, indicating a promising structural design for future development of high‐performance, low‐cost flexible NW devices.

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Section: Introductionmentioning

confidence: 72%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Axial p‐n junction design and characterization for InP nanowire array solar cells

Gao

et al. 2018

Progress in Photovoltaics

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“…38,49 Another relevant study under a pulsed excitation condition was also conducted and would be of interest here as well. 50 Figure 3a lays out the experimental setup used to implement this method. It consists of the aforementioned μ-PL setup (blue background), in conjunction with time-correlated singlephoton counting (TCSPC) facility (pink background) for TRPL measurement (see ref 35 for details).…”

Section: Nano Lettersmentioning

confidence: 99%

Wurtzite-Phased InP Micropillars Grown on Silicon with Low Surface Recombination Velocity

Tran

et al. 2015

Nano Lett.

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The direct growth of III-V nanostructures on silicon has shown great promise in the integration of optoelectronics with silicon-based technologies. Our previous work showed that scaling up nanostructures to microsize while maintaining high quality heterogeneous integration opens a pathway toward a complete photonic integrated circuit and high-efficiency cost-effective solar cells. In this paper, we present a thorough material study of novel metastable InP micropillars monolithically grown on silicon, focusing on two enabling aspects of this technology-the stress relaxation mechanism at the heterogeneous interface and the microstructure surface quality. Aberration-corrected transmission electron microscopy studies show that InP grows directly on silicon without any amorphous layer in between. A set of periodic dislocations was found at the heterointerface, relaxing the 8% lattice mismatch between InP and Si. Single crystalline InP therefore can grow on top of the fully relaxed template, yielding high-quality micropillars with diameters expanding beyond 1 μm. An interesting power-dependence trend of carrier recombination lifetimes was captured for these InP micropillars at room temperature, for the first time for micro/nanostructures. By simply combining internal quantum efficiency with carrier lifetime, we revealed the recombination dynamics of nonradiative and radiative portions separately. A very low surface recombination velocity of 1.1 × 10(3) cm/sec was obtained. In addition, we experimentally estimated the radiative recombination B coefficient of 2.0 × 10(-10) cm(3)/sec for pure wurtzite-phased InP. These values are comparable with those obtained from InP bulk. Exceeding the limits of conventional nanowires, our InP micropillars combine the strengths of both nanostructures and bulk materials and will provide an avenue in heterogeneous integration of III-V semiconductor materials onto silicon platforms.

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III – V Compound Semiconductor Nanowire Solar Cells

Tan

Jagadish

et al. 2021

Atomic and Nano Scale Materials for Advanced Energy Conversion

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Spatially Resolved Doping Concentration and Nonradiative Lifetime Profiles in Single Si-Doped InP Nanowires Using Photoluminescence Mapping

Cited by 43 publications

References 54 publications

Axial p‐n junction design and characterization for InP nanowire array solar cells

Axial p‐n junction design and characterization for InP nanowire array solar cells

Wurtzite-Phased InP Micropillars Grown on Silicon with Low Surface Recombination Velocity

III – V Compound Semiconductor Nanowire Solar Cells

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