Spatially resolved optical control of GaN grown by selective area hydride vapor phase epitaxy

Defect-rich GaN interlayer facilitating the annihilation of threading dislocations in polar GaN crystals grown on (0001)-oriented sapphire substrates

“…[20][21][22] In a recent publication, Stanchu et al described the positive effect of compositionally graded AlGaN buried layers in GaN/AlGaN/GaN stacks on the lattice strain relaxation and on the annihilation of TDs. 23 Among the nowadays actively developed techniques which support bending and bunching of the TDs in GaN, the selective area growth (SAG), [24][25][26][27][28] the epitaxial lateral overgrowth (ELO), [29][30][31][32][33] and the facet-controlled epitaxial lateral overgrowth (FACELO) [34][35][36] are to be mentioned.…”