Spatiotemporal chaos in broad-area semiconductor lasers

Adachihara, H.; Hess, Ortwin; Abraham, E.; Ru, P.; Moloney, J. V.

doi:10.1364/josab.10.000658

Cited by 83 publications

(25 citation statements)

References 14 publications

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“…With increasing active region temperature the motion of the main filaments becomes imperceptible due to the temporal resolution of the setup. 5,13 This is attributed to an increasing frequency of the spatio-temporal field dynamics, which is driven by the bulk temperature rise as well.…”

Section: Thermal Behaviormentioning

confidence: 99%

Near-field evolution in strongly pumped broad area diode lasers

et al. 2012

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Many applications such as pumping of solid state lasers or ignition of explosives require high optical output powers during a short period. Pulsed operated diode lasers meet these requirements. They can be driven at elevated power levels, well above the ones specified for continuous wave (cw) operation. The optical near-field intensity of a diode laser in this operation regime is a key parameter since it determines the beam properties of the device. High power AlGaAs/GaAs quantum well broad area diode lasers are subjected to single pulse step tests carried out up to and beyond their ultimate limits of operation. Laser near-fields are monitored on a picosecond time scale using a streak-camera setup during pulse currents of up to ~50 times the threshold current. A transition from gain guiding to thermally-induced index guiding of the near-field is shown. Further power increase is prevented by catastrophic optical damage (COD). This sudden failure mechanism is studied in conjunction with filamentary properties of the near-field. The defect growth dynamics resolved on the picosecond time scale is used to gather inside into the physics behind COD.

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Section: Thermal Behaviormentioning

confidence: 99%

Near-field evolution in strongly pumped broad area diode lasers

et al. 2012

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“…Both and are functions of the longitudinally averaged carrier density . For , we simply assume the linear behavior (8) where is the carrier density at transparency, is the transverse confinement factor and is the differential material gain. We shall use the set for which as reference carrier density and reference frequency around which we expand (9) For the partial derivatives of , we use (10) where is the group index, is the group velocity, and is the linewidth enhancement factor.…”

Section: Lateral Mode Equations For a Ba Laser Diodementioning

confidence: 99%

Structure, Stability, and Spectra of Lateral Modes of a Broad-Area Semiconductor Laser

Blaaberg

Petersen

Tromborg

2007

IEEE J. Quantum Electron.

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“…Edge-emitting broad-area (BA) lasers, which are robust and highly efficient devices for generation of high power beams, however, suffer from a poor spatial beam quality [5,6]. The stabilization of optical beams in a BA devices can be achieved, for example, by external optical injection [7,8], introducing feedback [9][10][11] or by changing the geometry of the device [12][13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Far-field narrowing in spatially modulated broad-area edge-emitting semiconductor amplifiers

et al. 2015

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UPCommonsPortal del coneixement obert de la UPC http://upcommons.upc.edu/e-prints Radziunas, M., Herrero, R., Botey, M., Staliunas, K. (2015) We perform a detailed theoretical analysis of the far field narrowing in broad-area edge-emitting semiconductor amplifiers that are electrically injected through the contacts periodically modulated in both, longitudinal and transverse, directions. The beam propagation properties within the semiconductor amplifier are explored by a (1+2)-dimensional traveling wave model and its coupled mode approximation. Assuming a weak field regime, we analyze the impact of different parameters and modulation geometry on the narrowing of the principal far field component. OCIS codes:(250.5980) Semiconductor optical amplifiers; (140.3300) Laser beam shaping; (220.2740) Geometric optical design; (130.5296) Photonic crystal waveguides.http://dx

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Spatiotemporal chaos in broad-area semiconductor lasers

Cited by 83 publications

References 14 publications

Near-field evolution in strongly pumped broad area diode lasers

Near-field evolution in strongly pumped broad area diode lasers

Structure, Stability, and Spectra of Lateral Modes of a Broad-Area Semiconductor Laser

Far-field narrowing in spatially modulated broad-area edge-emitting semiconductor amplifiers

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