Special Issue on Miniaturized Transistors, Volume II

Filipovic, Lado

doi:10.3390/mi13040603

Cited by 2 publications

(2 citation statements)

References 23 publications

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“…Side effects caused by electromagnetic or thermal effects may also occur, resulting in malfunctions or thermomechanical stresses and distortions. At the same time, understanding the processes of interaction of ionizing radiation on semiconductor devices, as well as microelectronic devices, is very important for the design and development of electronic devices, and therefore, much attention has been paid to this area in recent years [ 8 , 9 , 10 ]. Note that while the processes of radiation damage are fairly well understood in binary oxides and halides [ 11 , 12 , 13 , 14 , 15 , 16 , 17 ], the situation in multicomponent glasses is still far from detailed [ 18 , 19 , 20 ].…”

Section: Introductionmentioning

confidence: 99%

Investigation of the Efficiency of Shielding Gamma and Electron Radiation Using Glasses Based on TeO2-WO3-Bi2O3-MoO3-SiO to Protect Electronic Circuits from the Negative Effects of Ionizing Radiation

et al. 2022

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This article considers the effect of MoO3 and SiO additives in telluride glasses on the shielding characteristics and protection of electronic microcircuits operating under conditions of increased radiation background or cosmic radiation. MoO3 and SiO dopants were chosen because their properties, including their insulating characteristics, make it possible to avoid breakdown processes caused by radiation damage. The relevance of the study consists in the proposed method of using protective glasses to protect the most important components of electronic circuits from the negative effects of ionizing radiation, which can cause failures or lead to destabilization of the electronics. Evaluation of the shielding efficiency of gamma and electron radiation was carried out using a standard method for determining the change in the threshold voltage (∆U) value of microcircuits placed behind the shield and subjected to irradiation with various doses. It was established that an increase in the content of MoO3 and SiO in the glass structure led to an increase of up to 90% in the gamma radiation shielding efficiency, while maintaining the stability of microcircuit performance under prolonged exposure to ionizing radiation. The results obtained allow us to conclude that the use of protective glasses based on TeO2–WO3–Bi2O3–MoO3–SiO is highly promising for creating local protection for the main components of microcircuits and semiconductor devices operating under conditions of increased background radiation or cosmic radiation.

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Section: Introductionmentioning

confidence: 99%

Investigation of the Efficiency of Shielding Gamma and Electron Radiation Using Glasses Based on TeO2-WO3-Bi2O3-MoO3-SiO to Protect Electronic Circuits from the Negative Effects of Ionizing Radiation

et al. 2022

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“…4 The rise in device variability worsens the electrostatic integrity of memory devices. 5 furthermore, there lie multiple reliability concerns, e.g. Hot Carrier Injection (HCI), 6 Bias Temperature Instability (BTI), 7,8 radiation damage, 11 and Time-Dependent Dielectric Breakdown (TDDB).…”

mentioning

confidence: 99%

A CNTFET Based Bit-Line Powered Stable SRAM Design for Low Power Applications

Sachdeva

Sharma

Gupta

et al. 2023

ECS J. Solid State Sci. Technol.

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Higher charge mobility, gate control, and better electrostatics are the key reasons that make a carbon nanotube field effect transistor (CNTFET) a better candidate as the successor of conventional complementary metal oxide semiconductor transistors. However, the increased charge mobility also enhances the leakage power. This work uses CNTFET for designing a low-power eight-transistor static random access memory (8T SRAM) cell. The leakage power of the proposed cell is reduced by 2.21× compared to conventional 6T SRAM at 0.3 V with similar CNTFET parameters. The read and write power delay product of the proposed design is improved by 1.02× and 1.85×, respectively. Moreover, the read/write/ hold static noise margin of the proposed cell is also enhanced by 1.98×/ 0.99×/ 1.01×, respectively, compared to the conventional 6T design. The proposed cell is also compared with three already proposed CNTFET based 8T SRAM designs. Cadence Virtuoso simulation tool and Stanford University 32 nm CNTFET verilog-A model file are used to achieve simulation results.

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Special Issue on Miniaturized Transistors, Volume II

Abstract: Due to the great success of the initial Special Issue on Miniaturized Transistors [...]

Cited by 2 publications

References 23 publications

Investigation of the Efficiency of Shielding Gamma and Electron Radiation Using Glasses Based on TeO2-WO3-Bi2O3-MoO3-SiO to Protect Electronic Circuits from the Negative Effects of Ionizing Radiation

Investigation of the Efficiency of Shielding Gamma and Electron Radiation Using Glasses Based on TeO2-WO3-Bi2O3-MoO3-SiO to Protect Electronic Circuits from the Negative Effects of Ionizing Radiation

A CNTFET Based Bit-Line Powered Stable SRAM Design for Low Power Applications

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