SPECIAL MECHANISM OF CONDUCTION TYPE INVERSION IN PLASTICALLY DEFORMED n-Si

Abstract

The aim of research is studying the mechanism of n-p inversion of the conduction type of deformed silicon crystals in the course of their thermal treatment. Initially, almost non-dislocation zone-melted phosphorus-doped n-Si single crystals with electron (2019), «EUREKA: Physics and Engineering» Number 4 77 Fundamental and applied physics Original Research Article: full paper concentration of 2. 10 14 cm-3 were studied. Uniaxial compression at temperature of 700 °С and pressure of 25 MPa increased the dislocation density to 10 8 cm-2. After long (within 30 min) cooling of the deformed crystals to room temperature, an n-p inversion of the conduction type occurred. The effect is explained by the formation of phosphorus-divacancy complexes PV 2 in the defective atmosphere of dislocations, which are acceptor centers with energy level of E v +0.34 eV. The found out n-p inversion mechanism differs from the standard one for plastically deformed n-type semiconductors with a diamond-like crystalline structure, which consists in the formation of acceptor centers along edge dislocations.

Bistable Boron-Related Defect Associated with the Acceptor Removal Process in Irradiated p-Type Silicon—Electronic Properties of Configurational Transformations

“…These sensors were designed to withstand an integrated luminosity of 300 fb −1 corresponding to a cumulated radiation level of 2 × 10 15 n eq /cm 2 (n eq stands for 1 MeV neutron equivalent) and ionizing doses of about 300 kGy. Common to n-type silicon sensors is the type inversion , a phenomenon occurring gradually with an increasing irradiation fluence [ 7 , 8 ] and not as a result of plastic deformations induced at elevated temperatures [ 9 ]. Thermally stimulated current (TSC) experiments evidenced that the space charge sign inversion in irradiated n-type silicon diodes is determined by the generation of some specific acceptor defects [ 10 , 11 , 12 ].…”