Specific contact resistances between amorphous oxide semiconductor In–Ga–Zn–O and metallic electrodes

Shimura, Yasuhiro; Nomura, Kenji; Yanagi, Hiroshi; Kamiya, Toshio; Hirano, Masahiro; Hosono, Hideo

doi:10.1016/j.tsf.2007.10.051

Cited by 201 publications

(118 citation statements)

References 16 publications

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“…electronic properties of the contact metal, 25 or by plasma and heat treatments. 26 The presented TFTs with optimized Ti/Au and Cr/Au contacts exhibit state-of-the-art width-normalized contact resistances of 5.6 X cm (L OV ¼ 15 lm), 6.7 X cm (L OV ¼ 5 lm), and 12.4 X cm (L OV ¼ 1.5 lm).…”

Section: -2mentioning

confidence: 99%

Contact resistance and overlapping capacitance in flexible sub-micron long oxide thin-film transistors for above 100 MHz operation

Münzenrieder

Salvatore

Petti

et al. 2014

Applied Physics Letters

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Section: -2mentioning

confidence: 99%

Contact resistance and overlapping capacitance in flexible sub-micron long oxide thin-film transistors for above 100 MHz operation

Münzenrieder

Salvatore

Petti

et al. 2014

Applied Physics Letters

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“…Metal oxide semiconductors, in particular, are very attractive for implementation into thin-film transistors (TFTs) [1][2] mainly because of their high charge 2 carrier mobility, high optical transparency, excellent chemical stability, mechanical stress tolerance and processing versatility [3][4][5] . Oxide semiconductors are usually grown using vacuum-based techniques such as sputtering [6][7][8] , pulsed laser deposition [9] , chemical vapour deposition [10] , and ion-assisted deposition [11][12] . Based on these methods, the synthesis of a wide range of metal oxide semiconductors with high charge carrier mobilities and low carrier concentration has been demonstrated [7] .…”

mentioning

confidence: 99%

“…Oxide semiconductors are usually grown using vacuum-based techniques such as sputtering [6][7][8] , pulsed laser deposition [9] , chemical vapour deposition [10] , and ion-assisted deposition [11][12] . Based on these methods, the synthesis of a wide range of metal oxide semiconductors with high charge carrier mobilities and low carrier concentration has been demonstrated [7] .…”

mentioning

confidence: 99%

Spray‐Deposited Li‐Doped ZnO Transistors with Electron Mobility Exceeding 50 cm²/Vs

et al. 2010

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The ever increasing demand for high performance electronic devices that can be fabricated onto large-area substrates employing low manufacturing cost techniques has given a boost to the development of alternative types of semiconductor materials, such as organics and metal oxides, with desirable physical characteristics that are absent in their traditional inorganic counterparts. Metal oxide semiconductors, in particular, are very attractive for implementation into thin-film transistors (TFTs) [1][2] mainly because of their high charge 2 carrier mobility, high optical transparency, excellent chemical stability, mechanical stress tolerance and processing versatility [3][4][5] . Oxide semiconductors are usually grown using vacuum-based techniques such as sputtering [6][7][8] , pulsed laser deposition [9] , chemical vapour deposition [10] , and ion-assisted deposition [11][12] . Based on these methods, the synthesis of a wide range of metal oxide semiconductors with high charge carrier mobilities and low carrier concentration has been demonstrated [7] . Many of these materials have been investigated for applications in thin-film electronics where transistors with electron mobilities up to 140 cm 2 /Vs have been demonstrated [7,[11][12][13][14][15][16] . Despite the great promise however, the application of vacuum-based technologies for the deposition of complex oxide semiconductors suffers from incompatibility with large-area substrates and hence high manufacturing cost. To this end, the development of alternative deposition methods based on solution processing paradigms could provide a breakthrough in both cost and performance by marrying fabrication simplicity with high-throughput manufacturing.In recent years a wide variety of soluble precursors compounds have been examined as potential alternatives for the fabrication of oxide-based TFTs using large area deposition methods including spin casting, dip coating and spray pyrolysis. For example, metal oxides such as zinc oxide (ZnO) [17][18][19][20][21][22] , indium oxide (In 2 O 3 ) [23][24] , indium gallium oxide (InGaO) [25] , indium zinc oxide (InZnO) [18][19][20][21][22][23][24][25][26] and zinc tin oxide (ZnSnO) [27] have been synthesised using soluble precursors and implemented into TFT structures. Despite the process simplicity, excellent charge carrier mobilities have been achieved, clearly demonstrating the significant potential of this alternative processing methodology. Here we show how spray pyrolysis (SP) can be used for the deposition of doped ZnO films and the fabrication of high electron mobility TFTs onto large area substrates under ambient atmosphere. Doping is achieved by simple physical blending of the soluble precursor compounds in water or alcohol based solutions. Among the various dopants studied, transistors fabricated using Li doped ZnO were 3 found to yield the best performance with maximum electron mobility > 50 cm 2 /Vs and on/off current modulation ratio exceeding 10 6 .Preparation of the Li doped precursor solutions is described in th...

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“…The TLM was adopted to evaluate the contact resistance of different electodes [12]. By defining the total TFT ONn resistance (RT) as RT = V DS /I DS , RT can be expressed as:…”

Section: Resultsmentioning

confidence: 99%

“…The property of contacts on the a-IGZO layer depends on the Schottky barrier height [12]. When the AZO/Ag/ AZO mutilayer with the barrier height ( B ) of 0.02 eV is used as source/drain contacts, we focused our interest on using a heavily doped layer as a contact to source/drain because it is the conventional technology for oxide semiconductor devices.…”

Section: Resultsmentioning

confidence: 99%

Improved Electrical Properties of Indium Gallium Zinc Oxide Thin-Film Transistors by AZO/Ag/AZO Multilayer Electrode

No¹,

Yang²,

Park³

et al. 2013

Journal of Sensor Science and Technology

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This is an Open Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License(http://creativecommons.org/licenses/bync/3.0)which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.Journal of Sensor Science and Technology Vol. 22, No. 2 (2013) AbstractWe fabricated an a-IGZO thin film transistor (TFT) with AZO/Ag/AZO transparent multilayer source/drain contacts by rf magnetron sputtering. a-IGZO TFT with AZO/Ag/AZO multilayer S/D electrodes (W/L = 400/50 µm) showed a subs-threshold swing of 3.78 V/dec, a minimum off-current of 10 -12 A, a threshold voltage of 0.41 V, a field effect mobility of 10.86 cm 2 /Vs, and an on/off ratio of 9 10 9 . From the ultraviolet photoemission spectroscopy, it was revealed that the enhanced electrical performance resulted from the lowering of the Schottky barrier between a-IGZO and Ag due to the insertion of an AZO layer and thus the AZO/Ag/AZO multilayer would be very appropriate for a promising S/D contact material for the fabrication of high performance TFTs.

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Specific contact resistances between amorphous oxide semiconductor In–Ga–Zn–O and metallic electrodes

Cited by 201 publications

References 16 publications

Contact resistance and overlapping capacitance in flexible sub-micron long oxide thin-film transistors for above 100 MHz operation

Contact resistance and overlapping capacitance in flexible sub-micron long oxide thin-film transistors for above 100 MHz operation

Spray‐Deposited Li‐Doped ZnO Transistors with Electron Mobility Exceeding 50 cm²/Vs

Improved Electrical Properties of Indium Gallium Zinc Oxide Thin-Film Transistors by AZO/Ag/AZO Multilayer Electrode

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Specific contact resistances between amorphous oxide semiconductor In–Ga–Zn–O and metallic electrodes

Cited by 201 publications

References 16 publications

Contact resistance and overlapping capacitance in flexible sub-micron long oxide thin-film transistors for above 100 MHz operation

Contact resistance and overlapping capacitance in flexible sub-micron long oxide thin-film transistors for above 100 MHz operation

Spray‐Deposited Li‐Doped ZnO Transistors with Electron Mobility Exceeding 50 cm2/Vs

Improved Electrical Properties of Indium Gallium Zinc Oxide Thin-Film Transistors by AZO/Ag/AZO Multilayer Electrode

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Spray‐Deposited Li‐Doped ZnO Transistors with Electron Mobility Exceeding 50 cm²/Vs