Specific contact resistivity of InGaAs/InP
            <i>p</i>
            -isotype heterojunctions

Wasserbauer, J.; Bowers, John E.; Hafich, M. J.; Silvestre, P.; Woods, L.M.; Robinson, G. Y.

doi:10.1049/el:19920998

Cited by 15 publications

(8 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…47 As/lnP have shown excellent properties of a uniform interfacial reaction and low specific contact resistance, pc [1][2][3]. An essential step in the realisation of high performance lasers in these systems has been a low resistance ohmic contact to the capping layer of p-In 0 .…”

Section: Introductionmentioning

confidence: 99%

The Stability to Ageing of Pd/Zn and Pt-Based Ohmic Contacts to p-InGaAs/InP

Leech

Reeves²,

Ressel

1998

MRS Proc.

View full text Add to dashboard Cite

show abstract

Section: Introductionmentioning

confidence: 99%

The Stability to Ageing of Pd/Zn and Pt-Based Ohmic Contacts to p-InGaAs/InP

Leech

Reeves²,

Ressel

1998

MRS Proc.

View full text Add to dashboard Cite

show abstract

“…2,3 For metallurgical studies, a series of planar samples ͑1ϫ1 cm͒ was prepared by electron beam evaporation at a base a͒ Electronic mail:p.leech@mst.csiro.au pressure of ϳ1ϫ10 Ϫ6 Torr. This structure was grown by metal organic chemical vapor deposition at Epitaxial Products Ltd., UK.…”

Section: Methodsmentioning

confidence: 99%

“…An essential step in the realization of high performance devices in these systems has been the formation of a low resistance ohmic contact on the capping layer of p-In 1Ϫx Ga x As/InP. [2][3][4] In this contact, the Pd adjacent to the In 1Ϫx Ga x As reacted advantageously to form a thin, uniform layer of a quaternary compound while at the same time penetrating any native oxides. 1 However, alloyed contacts ͑e.g., Au/Zn/ Au, Au/Be͒ have been unsuitable because of a nonuniform interface with the semiconductor while nonalloyed contacts ͑e.g., Ti/Pt/Au, Pt/Ti/Au͒ may yield an insufficiently low specific contact resistance, c .…”

Section: Introductionmentioning

confidence: 99%

Thermal stability of Pd/Zn and Pt based contacts to p-In0.53Ga0.47As/InP with various barrier layers

Leech

Reeves²,

Zhou³

et al. 1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

Electrical characterization, metallurgical investigation, and thermal stability studies of (Pd, Ti, Au)-based ohmic contacts Pd/Zn/Au contacts to p-In 0.53 Ga 0.47 As/InP with various types of barrier layers to the indiffusion of Au have been examined by Rutherford backscattering spectrometry ͑RBS͒. For the metallizations with a barrier layer of Pd, the aging of the contacts at 400°C for 20 h produced a widespread indiffusion of Au for all thicknesses of the Pd. In comparison, the incorporation of a layer of Pt or amorphous LaB 6 in the contacts prevented an indiffusion of Au and significantly reduced any outdiffusion of the semiconductor elements. The presence of the barrier layer of Pt or LaB 6 produced little or no detrimental increase in c for this contact system. In the as-deposited Pd-based contacts, a layer of Zn in the structure was necessary in order to produce a minimum value of c . After annealing at 500°C, a specific contact resistance in the range 8-10ϫ10 Ϫ6 ⍀ cm 2 was obtained for all of the contacts based on Pd/Zn/Au. A comparison has been made with the characteristics of Pt/Ti/Pt/Au contacts to p-In 0.53 Ga 0.47 As/InP which were shown as stable against the indiffusion of Au.

show abstract

“…2,6 Beyond the metallurgy of the metal-semiconductor junction, a buffer layer of highly doped InP-lattice-matched In 0.53 Ga 0.47 As reduces the compound contact resistance. 7,8 However, the use of a p-InGaAs contact layer does not entirely resolve the contact resistance problem: the layer shifts the problem from the metal-semiconductor junction to the semiconductor-semiconductor junction between the p-InGaAs and p-InP. Holes must still surmount an energy barrier ϳ0.45 eV between the p-doped binary and ternary materials.…”

mentioning

confidence: 99%

“…Holes must still surmount an energy barrier ϳ0.45 eV between the p-doped binary and ternary materials. 7 Conventionally, contact resistance is estimated by simulation or by isolating the contact under study in a test structure, 2,7,8 an example of which is shown in Fig. 1 for metal-p-InP via p-InGaAs.…”

mentioning

confidence: 99%

In situ resistance measurement of the p-type contact in InP–InGaAsP coolerless ridge waveguide lasers

Kuntze

Sargent

White³

et al. 2005

Applied Physics Letters

View full text Add to dashboard Cite

Scanning voltage microscopy (SVM) is employed to measure the voltage division—and resulting contact resistance and power loss—at the p-In0.53Ga0.47As–p-InP heterojunction in a working InP–InGaAsP laser diode. This heterojunction is observed to dissipate ∼35% of the total power applied to the laser over the operating bias range. This in situ experimental study of the parasitic voltage division (and resulting power loss and series contact resistance) highlights the need for a good p-type contact strategy. SVM technique provides a direct, fast and in situ measurement of specific contact resistance, an important device parameter.

show abstract

Specific contact resistivity of InGaAs/InP p -isotype heterojunctions

Cited by 15 publications

References 0 publications

The Stability to Ageing of Pd/Zn and Pt-Based Ohmic Contacts to p-InGaAs/InP

The Stability to Ageing of Pd/Zn and Pt-Based Ohmic Contacts to p-InGaAs/InP

Thermal stability of Pd/Zn and Pt based contacts to p-In0.53Ga0.47As/InP with various barrier layers

In situ resistance measurement of the p-type contact in InP–InGaAsP coolerless ridge waveguide lasers

Contact Info

Product

Resources

About