Specific Features and Nature of the 890 nm Photoluminescence Band Detected in SiO x Films after Low-Temperature Annealing

Effect of erbium fluoride doping on the photoluminescence of SiO x films

“…2, curves 2, 2 '). The results of a more comprehensive study into the properties of the 890 nm band and discussion of the nature of the corre sponding centers was reported in [27]. These experi mentally established features of the band are inconsis tent with the nature of electron transitions, to which the PL observed in SiO x films has thus far been attrib uted.…”

Quantifying inhomogeneities in silicon-rich oxide thin films

“…The presence of these boundary oxides strongly affects the electronic properties of silicon. 1 After detecting visible luminescence in porous silicon, researchers began using an annealing process to produce nanocrystalline silicon from silicon-rich oxides. 2 Producing nanocrystalline silicon from SiO x thin films offers an advantage because SiO x thin films can be created using CMOS-compatible methods.…”