Specific features of Bi2Te3 doping with Sn

Zhitinskaya, M. K.; Немов, С. А.; Svechnikova, T. E.

doi:10.1134/1.1130548

Cited by 32 publications

(28 citation statements)

References 5 publications

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“…The results are shown in Fig. However, in the case of doping with impurities producing resonant states, such as Sn in Bi 2 Te 3 [3,5] or Tl and In in PbTe [6], crystals are evidently homogenized. The comparison of data obtained for undoped and Sn-doped Bi 2 Te 2.94 Se 0.06 and Bi 1.99 Sn 0.01 Te 2.94 Se 0.06 solid solutions (Fig.…”

Section: Methodsmentioning

confidence: 99%

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Impurity States of Tin in Bi[sub 2]Te[sub 3 – ][sub x]Se[sub x] (x = 0.06, 0.12) Solid Solutions

Zhitinskaya¹

2004

Semiconductors

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Section: Methodsmentioning

confidence: 99%

“…As shown in [1][2][3][4][5], resonant states of Sn considerably modify the electrical properties of Bi 2 Te 3 crystals. As shown in [1][2][3][4][5], resonant states of Sn considerably modify the electrical properties of Bi 2 Te 3 crystals.…”

Section: Introduction Bi 2 Te 3 -mentioning

confidence: 99%

Impurity States of Tin in Bi[sub 2]Te[sub 3 – ][sub x]Se[sub x] (x = 0.06, 0.12) Solid Solutions

Zhitinskaya¹

2004

Semiconductors

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“…In the 1950s, Friedel found that transition metal impurities can induce a sharp increase of resistivity in a small energy region by their resonant electron scattering [53]. Group III elements such as Tl, and group IV elements such as Sn have also been found to create resonant levels in the band structures of IV-VI semiconductors [54], and Bi 2 Te 3 [55], respectively. More thorough review on resonant impurities is found in Ref.…”

Section: Realization Of Nonplanar Electron Filteringmentioning

confidence: 97%

Electron Transport Engineering by Nanostructures for Efficient Thermoelectrics

Bahk

Shakouri

2013

Lecture Notes in Nanoscale Science and Technology

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We theoretically investigate nanoscale structures such as nanoparticles embedded in bulk materials as a means of improving the thermoelectric energy conversion efficiency. We focus on the impact of such nanostructures on the electron transport in the host material, and discuss the enhancement of the thermoelectric power factor and thus the figure of merit. Nanostructures embedded in thermoelectric materials can create potential variations at the nanoscale due to the hetero-interfaces, which can alter the transport of charge carriers in the host material to enhance the Seebeck coefficient and the power factor. The energydependent electron scattering times induced by nanoparticles are calculated using the partial wave method. Thermoelectric transport properties are then calculated based on the linearized Boltzmann transport theory with the relaxation time approximation for various thermoelectric materials such as ErAs:InGaAs, PbTe, and Mg 2 Si. The effects of different kinds of nanoparticles including single-phase ionized metallic nanoparticles and core-shell nanoparticles embedded in semiconductors are investigated in these semiconductors. Finally the electron energy filtering scheme is discussed to further enhance the thermoelectric energy conversion efficiency. IntroductionIn the past few decades, thermoelectric energy conversion has drawn keen attention as a viable candidate for waste heat recovery and hotspot cooling applications [1,2]. More than 55 % of energy generated in the society is rejected as a form of heat [3]. Thermoelectric (TE) devices directly convert heat energy into electricity

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“…The method was first proposed and applied to studies of n-PbTe in [40] and then used widely for studying a variety of semiconductors and semimetals, in both bulk and thin film form, see, e.g., [41][42][43]. In 1995 joint studies by Dr. T. Coutts, NREL and Dr. V. Kaydanov, CSM were started, aimed at applying the method to investigation of TCO materials.…”

Section: Introductionmentioning

confidence: 99%

Process Development and Basic Studies of Electrochemically Deposited CdTe-Based Solar Cells; Annual Technical Report, Phase II, 16 May 1999-13 May 2000

Kaydanov¹,

Ohno

2001

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Specific features of Bi2Te3 doping with Sn

Cited by 32 publications

References 5 publications

Impurity States of Tin in Bi[sub 2]Te[sub 3 – ][sub x]Se[sub x] (x = 0.06, 0.12) Solid Solutions

Impurity States of Tin in Bi[sub 2]Te[sub 3 – ][sub x]Se[sub x] (x = 0.06, 0.12) Solid Solutions

Electron Transport Engineering by Nanostructures for Efficient Thermoelectrics

Process Development and Basic Studies of Electrochemically Deposited CdTe-Based Solar Cells; Annual Technical Report, Phase II, 16 May 1999-13 May 2000

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