Specific features of the epitaxial growth of narrow-gap InSb quantum dots on an InAs substrate

Quantum dots and quantum dashes in the narrow-gap InSb/InAsSbP system

“…Average impact force did not exceed F ¼0.5 nN that is a sufficiently small deformation to avoid destruction of the sample surface. Experimental data were analyzed by Image Magic statistical treatment program developed in our institute [11].…”

“…Bimodal behavior of QDs distribution is typical for the system based on two binary semiconductors with a large mismatching in a lattice parameter (Da/a¼7%). As it was shown in [11], both types of the quantum dots were presented in the wide growth temperature range 420-440 1C and the limit temperature (T¼445 1C) for the bimodal QD formation has been established. At higher growth temperatures (T4445 1C) only the big InSb QDs with the low surface density (10 8 cm À 2 ) were observed.…”

“…Structural properties of the uncapped QDs were studied in dependence on growth conditions [11]. To change the surface chemistry of a matrix material in the narrow-gap InAs-based system, the epilayer of the quaternary InAsSbP solid solution lattice-matched with the InAs substrate was used as a ''matrix'' layer to form as called ''virtual substrate''.…”

Analytical and numerical calculations of spectral and optical characteristics of spheroidal quantum dots

“…Applying the relations (17) or (19) to get first derivatives of the basis functions, we get the expressions for the action of operators ij :…”

“…Recently several reports concerning the experimental implementation of narrow-band InSb QDs have appeared [16,17], in which the dispersion law for electrons and light holes is non-parabolic and described according to the double-band mirror Kane model [18,19].…”