Specific Heat Capacity Measurement of Single-Crystalline Silicon as New Reference Material

Abe, Haruka; Kato, Hidemi; Baba, Toshihide

doi:10.1143/jjap.50.11rg01

Cited by 8 publications

(2 citation statements)

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“…Equation ( 2) is plotted in figure 4 in units of nk B (n being the number volumic density), with corresponding to Silicon [16]. The calculated curve is particularly close to experimental data [20], despite the simplifications used. At high temperatures, it saturates at 3: this is known as the Dulong-Petit law, a limit reached when all modes are equally populated [2,3,16].…”

Section: Phonons and Thermal Properties 21 Collective Modes: Phononsmentioning

confidence: 78%

On the link between mechanics and thermal properties: mechanothermics

et al. 2023

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We report on the theoretical derivation of macroscopic thermal properties (specific heat, thermal conductivity) of an electrically insulating rod connected to two reservoirs, from the linear superposition of its mechanical mode Brownian motions. The calculation is performed for a weak thermal gradient, in the classical limit (high temperature). The development is kept basic as far as geometryand experimental conditions are concerned, enabling an almost fully analytic treatment. In the modeling, each of the modes is subject to a specific Langevin force, which enables to produce the required temperature profile along the rod. The theory is predictive: the temperature gradient (and therefore energy transport) is linked to motion amplitude cross-correlations between nearbymechanical modes. This arises because energy transport is actually mediated by mixing between the modal waves, and not by the modes themselves. This result can be tested on experiments, and shall extend the concepts underlying equipartition and fluctuation-dissipation theorems. The theory links intimately the macroscopic size of the clamping region where the mixing occurs to the microscopic lengthscale of the problem at hand: the phonon mean-free-path. This clamping region, which is key, has received recently a renewed attention in the field of nanomechanics with topical works on "phonon shields" and "soft clamping". We believe that our work should impact the domain of thermal transport in nanostructures, with future developments of the theory toward the quantum regime.

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Section: Phonons and Thermal Properties 21 Collective Modes: Phononsmentioning

confidence: 78%

On the link between mechanics and thermal properties: mechanothermics

et al. 2023

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“…Furthermore, the crystalline structure of Si provides it with exceptional thermal resistance and stable electrical performance, in contrast to organic semiconducting materials that often struggle with low thermal durability and poor electrical stability. This inherent stability ensures consistent and reliable functionality even under challenging conditions [64][65][66].…”

Section: Introductionmentioning

confidence: 99%

Novel fabrication techniques for ultra-thin silicon based flexible electronics

Lee,

Ju,

Lee

et al. 2024

Int. J. Extrem. Manuf.

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Flexible electronics offer a multitude of advantages, such as flexibility, lightweight properties, portability, and high durability. These unique properties allow for seamless applications to curved and soft surfaces, leading to extensive utilization across a wide range of fields in consumer electronics. These applications, for example, span integrated circuits, solar cells, batteries, wearable devices, bio-implants, soft robotics, and biomimetic applications. Recently, flexible electronic devices have been developed using a variety of materials such as organic, carbon-based, and inorganic semiconducting materials. Silicon (Si) owing to its mature fabrication process, excellent electrical, optical, thermal properties, and cost-efficiency, remains a compelling material choice for flexible electronics. Consequently, the research on ultra-thin Si in the context of flexible electronics is studied rigorously nowadays. The thinning of Si is crucially important for flexible electronics as it reduces its bending stiffness and the resultant bending strain, thereby enhancing flexibility while preserving its exceptional properties. This review provides a comprehensive overview of the recent efforts in the fabrication techniques for forming ultra-thin Si using top-down and bottom-up approaches and explores their utilization in flexible electronics and their applications.

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