Specific heat of Ni<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mo>(</mml:mo><mml:mi mathvariant="normal">N</mml:mi><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mo>)</mml:mo></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>6N<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mm

Sano, W.; Salinas, S. R.

doi:10.1103/physrevb.15.2731

Cited by 7 publications

(5 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This resulted in the increase of the Fermi surface size and in the crossing of the second valence band as well (see Fig.7b), leading to the emergence of a second holonic pocket at zone center. Notably, the filled valence bands are also surfacebound hole states in the sense that the charge distributions of their wavefunctions are spatially distributed in planar sheets [52], and the confinement of the induced holonic carriers within few atomic layers from the surface results in a value of n 3D exceeding the one responsible for the onset of SC in B-doped bulk diamond [51]. The authors then computed the electron-phonon coupling λ in the rigid-muffin-tin approximation [115][116][117], obtaining λ = 0.18 at n 2D = 2.84 · 10 13 cm −2 and λ = 0.47 at n 2D = 5.68 · 10 13 cm −2 .…”

Section: Superconductivitymentioning

confidence: 99%

“…In recent years, a much wider range of tunability (up to ∼ 10 15 cm −2 ) was achieved by means of the ionic gating technique [25,26], where the ultrahigh capacitance of an electrolyte/electrode interface is exploited to modulate the charge carrier density and strongly modify the physical properties of the gated material [27][28][29][30][31][32][33][34][35][36][37][38][39][40]. While the first reports of electrolyte-gated diamond-based transistors were focused on chemical and biological sensing [41][42][43][44], several later investigations appeared in the literature where the electric transport properties of the gateinduced two-dimensional hole system were front and center [45][46][47][48][49][50][51][52].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Two-dimensional hole transport in ion-gated diamond surfaces: A brief review (Review article)

Piatti

Romanin

Daghero

et al. 2019

Low Temperature Physics

View full text Add to dashboard Cite

Electrically-conducting diamond is a promising candidate for next-generation electronic, thermal and electrochemical applications. One of the major obstacles towards its exploitation is the strong degradation that some of its key physical properties -such as the carrier mobility and the superconducting transition temperature -undergo upon the introduction of disorder. This makes the two-dimensional hole gas induced at its surface by electric field-effect doping particularly interesting from both a fundamental and an applied perspective, since it strongly reduces the amount of extrinsic disorder with respect to the standard boron substitution. Here, we review the main results achieved so far in controlling the electric transport properties of different field-effect doped diamond surfaces via the ionic gating technique. We analyze how ionic gating can tune their conductivity, carrier density and mobility, and drive the different surfaces across the insulator-to-metal transition. We review their strongly orientation-dependent magnetotransport properties, with a particular focus on the gate-tunable spin-orbit coupling shown by the (100) surface. Finally, we discuss the possibility of field-induced superconductivity in the (110) surface as predicted by density functional theory calculations.

show abstract

Section: Superconductivitymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Two-dimensional hole transport in ion-gated diamond surfaces: A brief review (Review article)

Piatti

Romanin

Daghero

et al. 2019

Low Temperature Physics

View full text Add to dashboard Cite

show abstract

“…Previous computations on the hydrogenated (110) diamond surface in FET configuration 10,11 suggested a possible superconductive phase transition. However, in that case, the presence of the electric field was taken into account in a self-consistent way only for the electronic structure and not for vibrational properties.…”

Section: Introductionmentioning

confidence: 96%

Electric field exfoliation and high-TC superconductivity in field-effect hole-doped hydrogenated diamond (111)

Romanin

Sohier

Mauri

et al. 2019

Applied Surface Science

View full text Add to dashboard Cite

We investigate the possible occurrence of field-effect induced superconductivity in the hydrogenated (111) diamond surface by first-principles calculations. By computing the band alignment between bulk diamond and the hydrogenated surface we show that the electric field exfoliates the sample, separating the electronic states at the valence band top from the bulk projected ones. At the hole doping values considered here, ranging from n = 2.84 × 10 13 cm −2 to n = 6 × 10 14 cm −2 , the valence band top is composed of up to three electronic bands hosting holes with different effective masses. These bands resemble those of the undoped surface, but they are heavily modified by the electric field and differ substantially from a rigid doping picture. We calculate superconducting properties by including the effects of charging of the slab and of the electric field on the structural properties, electronic structure, phonon dispersion and electron-phonon coupling. We find that at doping as large as n = 6 × 10 14 cm −2 , the electron-phonon interaction is λ = 0.81 and superconductivity emerges with TC ≈ 29 − 36K. Superconductivity is mostly supported by in-plane diamond phonon vibrations and to a lesser extent by some out-of-plane vibrations. The relevant electronphonon scattering processes involve both intra and interband scattering so that superconductivity is multiband in nature.

show abstract

“…In theoretical point of view, many works using the first-principles calculation address the superconductivity of semiconductors by assuming a traditional phonon mechanism. [13][14][15][16][17][18] In these theories, so-called the McMillan equation [20,21] is used to estimate T c as a more sophisticated formula than the BCS theory,…”

mentioning

confidence: 99%

Plasmon Effect on the Coulomb Pseudopotential μ^* in the McMillan Equation

2019

View full text Add to dashboard Cite

We examine the Coulomb pseudopotential µ * in the McMillan equation applying to the superconductivity of heavily doped semiconductors. Systematic calculation using the first-principles calculation suggests that µ * should be considered as a variable quantity depending on carrier density n in semiconductors, although it is usually considered as a constant about 0.1. To clarify n−dependence of µ * , we solve the McMillan equation inversely for µ * by combining the result of the first-principles calculation and that of experiments. It indicates that µ * decreases with n and becomes negative under n ∼ 5 × 10 −21 [cm −3 ]. This reduction is explained by the effect of plasmon which may play an important role in the superconductivity of low carrier systems such as heavily doped semiconductors.

show abstract

Specific heat of Ni(NO3)26N

Cited by 7 publications

References 17 publications

Two-dimensional hole transport in ion-gated diamond surfaces: A brief review (Review article)

Two-dimensional hole transport in ion-gated diamond surfaces: A brief review (Review article)

Electric field exfoliation and high-TC superconductivity in field-effect hole-doped hydrogenated diamond (111)

Plasmon Effect on the Coulomb Pseudopotential μ^* in the McMillan Equation

Contact Info

Product

Resources

About

Specific heat of Ni(NO3)26N

Cited by 7 publications

References 17 publications

Two-dimensional hole transport in ion-gated diamond surfaces: A brief review (Review article)

Two-dimensional hole transport in ion-gated diamond surfaces: A brief review (Review article)

Electric field exfoliation and high-TC superconductivity in field-effect hole-doped hydrogenated diamond (111)

Plasmon Effect on the Coulomb Pseudopotential μ* in the McMillan Equation

Contact Info

Product

Resources

About

Plasmon Effect on the Coulomb Pseudopotential μ^* in the McMillan Equation