Designing materials with advanced functionalities is the main focus of contemporary solid-state physics and chemistry. Research efforts worldwide are funneled into a few high-end goals, one of the oldest, and most fascinating of which is the search for an ambient temperature superconductor (A-SC). The reason is clear: superconductivity at ambient conditions implies being able to handle, measure and access a single, coherent, macroscopic quantum mechanical state without the limitations associated with cryogenics and pressurization. This would not only open exciting avenues for fundamental research, but also pave the road for a wide range of technological applications, affecting strategic areas such as energy conservation and climate change. In this roadmap we have collected contributions from many of the main actors working on superconductivity, and asked them to share their personal viewpoint on the field. The hope is that this article will serve not only as an instantaneous picture of the status of research, but also as a true roadmap defining the main long-term theoretical and experimental challenges that lie ahead. Interestingly, although the current research in superconductor design is dominated by conventional (phonon-mediated) superconductors, there seems to be a widespread consensus that achieving A-SC may require different pairing mechanisms. In memoriam, to Neil Ashcroft, who inspired us all.

We investigate the possible occurrence of field-effect induced superconductivity in the hydrogenated (111) diamond surface by first-principles calculations. By computing the band alignment between bulk diamond and the hydrogenated surface we show that the electric field exfoliates the sample, separating the electronic states at the valence band top from the bulk projected ones. At the hole doping values considered here, ranging from n = 2.84 × 10 13 cm −2 to n = 6 × 10 14 cm −2 , the valence band top is composed of up to three electronic bands hosting holes with different effective masses. These bands resemble those of the undoped surface, but they are heavily modified by the electric field and differ substantially from a rigid doping picture. We calculate superconducting properties by including the effects of charging of the slab and of the electric field on the structural properties, electronic structure, phonon dispersion and electron-phonon coupling. We find that at doping as large as n = 6 × 10 14 cm −2 , the electron-phonon interaction is λ = 0.81 and superconductivity emerges with TC ≈ 29 − 36K. Superconductivity is mostly supported by in-plane diamond phonon vibrations and to a lesser extent by some out-of-plane vibrations. The relevant electronphonon scattering processes involve both intra and interband scattering so that superconductivity is multiband in nature.

Gate-induced superconductivity at the surface of nanolayers of semiconducting transition metal dichalcogenides (TMDs) has attracted a lot of attention in recent years, thanks to the sizeable transition temperature, robustness against in-plane magnetic fields beyond the Pauli limit, and hints to a non-conventional nature of the pairing. A key information necessary to unveil its microscopic origin is the geometry of the Fermi surface hosting the Cooper pairs as a function of field-effect doping, which is dictated by the filling of the inequivalent valleys at the K/K ′ and Q/Q ′ points of the Brillouin Zone. Here, we achieve this by combining Density Functional Theory calculations of the bandstructure with transport measurements on ion-gated 2H-MoS2 nanolayers. We show that, when the number of layers and the amount of strain are set to their experimental values, the Fermi level crosses the bottom of the high-energy valleys at Q/Q ′ at doping levels where characteristic kinks in the transconductance are experimentally detected. We also develop a simple 2D model which is able to quantitatively describe the broadening of the kinks observed upon increasing temperature. We demonstrate that this combined approach can be employed to map the dependence of the Fermi surface of TMD nanolayers on field-effect doping, detect Lifshitz transitions, and provide a method to determine the amount of strain and spin-orbit splitting between sub-bands from electric transport measurements in real devices.

The interaction between an electric field and the electric charges in a material is described by electrostatic screening, which in metallic systems is commonly thought to be confined within a distance of the order of the Thomas-Fermi length. The validity of this picture, which holds for surface charges up to ∼ 10 13 cm −2 , has been recently questioned by several experimental results when dealing with larger surface charges, such as those routinely achieved via the ionic gating technique. Whether these results can be accounted for in a purely electrostatic picture is still debated. In this work, we tackle this issue by calculating the spatial dependence of the charge carrier density in thin slabs of niobium nitride via an ab initio density functional theory approach in the field-effect transistor configuration. We find that perturbations induced by surface charges 10 14 cm −2 are mainly screened within the first layer, while those induced by larger surface charges ∼ 10 15 cm −2 can penetrate over multiple atomic layers, in reasonable agreement with the available experimental data. Furthermore, we show that a significant contribution to the screening of large fields is associated not only to the accumulation layer of the induced charge carriers at the surface, but also to the polarization of the pre-existing charge density of the undoped system.

Electrically-conducting diamond is a promising candidate for next-generation electronic, thermal and electrochemical applications. One of the major obstacles towards its exploitation is the strong degradation that some of its key physical properties -such as the carrier mobility and the superconducting transition temperature -undergo upon the introduction of disorder. This makes the two-dimensional hole gas induced at its surface by electric field-effect doping particularly interesting from both a fundamental and an applied perspective, since it strongly reduces the amount of extrinsic disorder with respect to the standard boron substitution. Here, we review the main results achieved so far in controlling the electric transport properties of different field-effect doped diamond surfaces via the ionic gating technique. We analyze how ionic gating can tune their conductivity, carrier density and mobility, and drive the different surfaces across the insulator-to-metal transition. We review their strongly orientation-dependent magnetotransport properties, with a particular focus on the gate-tunable spin-orbit coupling shown by the (100) surface. Finally, we discuss the possibility of field-induced superconductivity in the (110) surface as predicted by density functional theory calculations.