Specific Negative Resistance in Solids

Ridley, B. K.

doi:10.1088/0370-1328/82/6/315

Cited by 544 publications

(214 citation statements)

References 6 publications

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“…Such characteristics are typically a consequence of the constriction of current flow to a narrow filament. 17 This was confirmed experimentally in our TiO x and TaO x devices. 11 The filament, thus formed is volatile 16 as the I-V curves are fully reversible up to this point.…”

supporting

confidence: 81%

“…20 The lowest E A calculated for orthorhombic Ta 2 O 5 was approximately 0.7 eV, obtained by finding the minimum energy barrier from one lattice site to an adjacent one using the nudged elastic band method. 17 Also, most device modeling efforts reproduced the device characteristics using values of E A ∼1 eV. 19,21 The large value of the activation energy allows for the stability of the filament while still making it possible to switch in high electric fields and high temperatures.…”

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confidence: 99%

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Transient phases during fast crystallization of organic thin films from solution

Wan

Ulbrandt

et al. 2016

APL Materials

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We report an in-situ microbeam grazing incidence X-ray scattering study of 2,7-dioctyl[1]benzothieno [3,2b][1]benzothiophene (C 8 -BTBT) organic semiconductor thin film deposition by hollow pen writing. Multiple transient phases are observed during the crystallization for substrate temperatures up to ≈93 • C. The layered smectic liquid-crystalline phase of C 8 -BTBT initially forms and preceedes inter-layer ordering, followed by a transient crystalline phase for temperature >60 • C, and ultimately the stable phase. Based on these results, we demonstrate a method to produce extremely large grain size and high carrier mobility during high-speed processing. For high writing speed (25 mm/s) mobility up to 3.0 cm 2 /V-s has been observed.

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supporting

confidence: 81%

mentioning

confidence: 99%

Transient phases during fast crystallization of organic thin films from solution

Wan

Ulbrandt

et al. 2016

APL Materials

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“…25,26 These filaments were interpreted as electrical instabilities related to the peculiar S-shaped I-V characteristics measured in VO 2 , in particular to their region of negative differential resistance (NDR). [27][28][29][30] Only a comprehensive microscopic theory of RS in correlated insulators, compatible with all the experimental evidence at hand, can resolve this long-standing puzzle. The recently proposed classical resistor network models 1,2,20,31-34 successfully reproduced part of the phenomenology but these are heuristic approaches, not firmly grounded from a microscopic perspective.…”

mentioning

confidence: 99%

Microscopic Theory of Resistive Switching in Ordered Insulators: Electronic versus Thermal Mechanisms

Aron

Kotliar

et al. 2017

Nano Lett.

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We investigate the dramatic switch of resistance in ordered correlated insulators, when driven out of equilibrium by a strong voltage bias. Microscopic calculations on a driven-dissipative lattice of interacting electrons explain the main experimental features of resistive switching (RS), such as the hysteretic I-V curves and the formation of hot conductive filaments. The energy-resolved electron distribution at the RS reveals the underlying nonequilibrium electronic mechanism, namely Landau-Zener tunneling, and also justifies a thermal description where the hot-electron temperature, estimated from the first moment of the distribution, matches the equilibrium phase transition temperature. We discuss the tangled relationship between filament growth and negative 1 arXiv:1608.01931v2 [cond-mat.str-el]

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“…However, this conclusion is valid only in the case of small lateral dimensions of the structure. From a general theory of the system with negative differential conductance (G d = dI/dV < 0), it is known that the states with negative G d are unstable and in case of the S-shape I-V curve a stratification of the current density occurs as a result of the instability [30,31]. Inhomogeneous states in different superconducting systems were studied in approximate models with account for electron-electron or electron-phonon inelastic scattering [10,11].…”

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confidence: 99%

Inhomogeneous state in nonequilibrium superconductor/normal-metal tunnel structures: A Larkin-Ovchinnikov-Fulde-Ferrell-like phase for nonmagnetic systems

2009

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We analyze non-equilibrium states in a tunnel superconductor-normal metal (N/S/N) structure in the presence of a tunnel current I. We use an approximation of an effective temperature T and calculate the current-voltage I-V characteristics. It is shown that the I-V dependence may have an Sshaped form. We determine nonuniform current I(x) and temperature T (x) distributions that arise as a result of instability of the uniform state with negative differential conductance (dI/dV < 0). We discuss an analogy with equilibrium superconductors with an exchange field in which nonuniform states predicted by Larkin/Ovchinnikov and Fulde/Ferrell are possible.

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Specific Negative Resistance in Solids

Cited by 544 publications

References 6 publications

Transient phases during fast crystallization of organic thin films from solution

Transient phases during fast crystallization of organic thin films from solution

Microscopic Theory of Resistive Switching in Ordered Insulators: Electronic versus Thermal Mechanisms

Inhomogeneous state in nonequilibrium superconductor/normal-metal tunnel structures: A Larkin-Ovchinnikov-Fulde-Ferrell-like phase for nonmagnetic systems

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