Spectral and luminescence properties of Cr^3+ and Nd^3+ ions in gallium garnet crystals

Denisov, A. L.; Ostroumov, V. G.; Saidov, Z S; Smirnov, Valerii A; Щербаков, И. А.

doi:10.1364/josab.3.000095

Cited by 33 publications

(12 citation statements)

References 8 publications

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“…Only spectra attributed to Nd 3+ ions substituting the dodecahedral Gd 3+ sites of the host lattice are seen and no additional spectra that could be attributed to defective centers close or at the surfaces of the ceramic grains are obvious. The positions of lines reflect the slightly weaker nephelauxetic and crystal field effects compared to Nd:YAG and are in fair agreement with those reported previously for Nd:GSGG single crystals [1][2][3][4]. The absorption spectra evidence lines suitable for diode laser pumping both in the 4 F 5/2 and 4 F 3/2 manifolds, while the emission spectra evidence transitions suitable for 1 mm 4 F 3/2 -4 I 11/2 laser emission (the strongest line R 2 -Y 3 at 1061.2 nm) or quasithree-level 4 F 3/2 -4 I 11/2 emission, with the strongest lines R 2 -Z 5 at 935.9 nm and (R 2 -Z 3 )+(R 1 -Z 2 ) at 882.9 nm, both with emission cross-section in the range of 2-3 Â 10 À20 cm 2 .…”

Section: Spectroscopic Resultssupporting

confidence: 90%

“…The quite large cubic lattice parameter (12.558 A) compared with 12 A for YAG (Y 3 Al 5 O 12 ) determines specific effects of the crystal on the energy level diagrams of the doping ions and on their radiative properties (absorption and emission cross-sections, emission lifetimes) as well as on the interactions between the doping ions [1][2][3][4]. The emission cross-section for the 1 mm 4 F 3/2 -4 I 11/2 laser emission of Nd:GSGG is about half from that of Nd:YAG, giving prospect for superior Q-switch operation or for use as amplifier material, especially for high power.…”

Section: Introductionmentioning

confidence: 99%

“…The emission cross-section for the 1 mm 4 F 3/2 -4 I 11/2 laser emission of Nd:GSGG is about half from that of Nd:YAG, giving prospect for superior Q-switch operation or for use as amplifier material, especially for high power. In case of Cr 3+ -doped GSGG the 4 T 2 level lies below 2 E, enabling tunable laser emission or efficient energy transfer to Nd 3+ [2]. The increased bond order of the octahedral site of Sc 3+ compared with the octahedral Al 3+ site of YAG determines increased resistance to the ionizing radiations [5].…”

Section: Introductionmentioning

confidence: 99%

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Comparative high-resolution spectroscopy and emission dynamics of Nd-doped GSGG crystals and transparent ceramics

Lupeǐ

Gheorghe

et al. 2008

Journal of Luminescence

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Section: Spectroscopic Resultssupporting

confidence: 90%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Comparative high-resolution spectroscopy and emission dynamics of Nd-doped GSGG crystals and transparent ceramics

Lupeǐ

Gheorghe

et al. 2008

Journal of Luminescence

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“…5 [20,21]. The energy transfer mechanism in Nd,Cr:GSGG has been attributed to a dipole-dipole interaction between nearby Cr 3+ donor and Nd 3+ acceptor ions [18] as originally described by Dexter [19].…”

Section: Optical Characterizationmentioning

confidence: 90%

“…The main features seen in the bulk spectrum are the broadband 4 T 2 → 4 A 2 phonon-assisted transition of Cr 3+ ions between about 670 nm and 1 µm and the sharp zero-phonon 4 F 3/2 → 4 I 9/2 transitions of Nd 3+ ions between 870 nm and 940 nm [20,22]. The spectrum is cut off at 900 nm as the efficiency of the detector used here reduces sharply from 850 nm to 900 nm.…”

Section: Optical Characterizationmentioning

confidence: 96%

Production and characterization of Nd,Cr:GSGG thin films on Si(001) grown by pulsed laser ablation

Willmott

Manoravi

Holliday

2000

Applied Physics A: Materials Science & Processing

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Nd,Cr:Gd 3 Sc 2 Ga 3 O 12 (GSGG) thin films have been produced for the first time. They were grown on Si(001) substrates at 650 • C by pulsed laser ablation at 248 nm of a crystalline Nd,Cr:GSGG target rod. The laser plume was analyzed using time-of-flight quadrupole mass spectroscopy, and consisted of elemental and metal oxide fragments with kinetic energies typically in the range 10 to 40 eV, though extending up to 100 eV. Although films deposited in vacuum using laser fluences of 0.8 ± 0.1 J cm −2 reproduced the Nd,Cr:GSGG bulk stoichiometry, those deposited using fluences above ≈ 3 J cm −2 resulted in noncongruent material transfer and were deficient in Ga and Cr. Attempts to grow films using synchronized oxygen or oxygen/argon pulses yielded mixed oxide phases. Under optimal growth conditions, the films were heteroepitaxial, with GSGG(001)[100] Si(001)[100], and exhibited VolmerWeber-type growth. Room-temperature emission spectra of the films suggest efficient non-radiative energy transfer between Cr 3+ and Nd 3+ ions, similar to that of the bulk crystal. PACS: 42.70.Hj; 78.66.Nk; 81.15.FgGadolinium scandium gallium garnet, Gd 3 Sc 2 Ga 3 O 12 (GSGG) doped with Nd and Cr has been shown to be an excellent solid-state lasing medium for high-efficiency Ndlasers [1, 2]. Nd 3+ ions in crystals have very narrow absorption linewidths and hence flashlamp pumping efficiency is poor. Nd 3+ can, however, be sensitized by also introducing Cr 3+ ions which absorb over a broad visible range and can rapidly transfer their energy by non-radiative processes to the Nd 3+ ions. GSGG offers the most efficient energy transfer from Cr 3+ to Nd 3+ ions of the various doublydoped garnet crystals investigated to date, due to its coactive crystal fields [3]. When flashlamp-pumped, the 1.06 µm 4 F 3/2 → 4 I 11/2 laser transition of Nd 3+ has been shown to be several times more efficient in Nd,Cr:GSGG than in the leading commercial host, Nd-doped yttrium aluminum garnet [3][4][5].There is an increasing interest in growing thin films of solid-state laser materials on semiconductor substrates, with a view to integrated semiconductor-optoelectronic applications such as active planar waveguides and optical masers [6,7], though this is the first report on the deposition of GSGG films. The thermal focusing effects observed in the bulk crystals, which limits the application of Nd,Cr:GSGG as a highpower lasing medium [8], is negligible in thin films because of their small thickness. The successful deposition of Nd,Cr:GSGG films on Si substrates by PLD could therefore lead to the development of microlasers with in situ semiconductor diode laser pumping [9]. Diode pumping has the advantage over flashlamp pumping that the Nd 3+ absorption line can be directly and efficiently pumped, thereby dispensing with the need to incorporate Cr 3+ ions.Pulsed laser deposition (PLD) is a technique uniquely suited to the deposition of multielemental thin films [10,11], because of its capacity to transfer material congruently from bulk to film in a single step....

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4.2.5.4 Further references for results from optical measurements

Kazei¹,

Kolmakova²,

Sokolov³

Garnets

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Spectral and luminescence properties of Cr^3+ and Nd^3+ ions in gallium garnet crystals

Cited by 33 publications

References 8 publications

Comparative high-resolution spectroscopy and emission dynamics of Nd-doped GSGG crystals and transparent ceramics

Comparative high-resolution spectroscopy and emission dynamics of Nd-doped GSGG crystals and transparent ceramics

Production and characterization of Nd,Cr:GSGG thin films on Si(001) grown by pulsed laser ablation

4.2.5.4 Further references for results from optical measurements

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