Spectral Characteristics of Narrow-Linewidth High-Power 1180 nm DBR Laser With Surface Gratings

High-Power 1180-nm GaInNAs DBR Laser Diodes

“…Using quantum dots with an untapered design, a power of 80 mW has been reported [8]. As an alternative solution to achieve narrow linewidth emission in this wavelength range we have developed GaInNAs QWs and recently demonstrated an untapered distributed Bragg reflector laser diode (DBR-LD) emitting about 500 mW at 1180 nm and exhibiting a linewidth below 250 kHz over the entire operation range [9]. The addition of a small amount of nitrogen makes it possible to extend the wavelength range of the regular GaInAs QW and at the same time reduce the strain linked to In incorporation.…”

“…Spectra of the untapered component from 100 mA to 2000 mA.components was good: the untapered and tapered components reached output powers of over 400 mW and over 1500 mW at 60°C, respectively.The spectrum full width at half maximum (FWHM) at 20°C mount temperature was 50 pm for the untapered component with 2000 mA injection current and 270 pm for the tapered component with I TA = 10 A, I RWG = 350 mA. The spectral width of the untapered component was limited by the resolution of the used Anritsu MS9710C optical spectrum analyzer[14], but self-homodyne linewidth measurements from previous generation components with similar structure have yielded fitted Lorentzian FWHM below 250 kHz[9].…”

Advances in narrow linewidth diode lasers

“…Currently, the scheme of all-solid-state lasers pumped by LD in 1180 nm band is used to generate yellow light. To meet this demand, the Tampere University of Technology of Finland [36] proposes a wide-tuning DBR laser, which uses a three-step surface trapezoidal grating combined with a ridge waveguide structure design to avoid secondary epitaxy growth. Meanwhile, it improves the SMSR of the device and achieves high-performance excitation with a laser linewidth less than 250 kHz, power > 500 mW, SMRR > 50 dB, and continuous operation for 2000 h without degradation.…”

Widely Tunable, Low Linewidth, and High Power Laser Source using an Electro-Optic Comb and Injection-Locked Slave Laser Array

“…Approaches to achieve this end range from semiconductor distributed feedback lasers (DFB) [12][13][14][15] and distributed Bragg reflector (DBR) lasers [16][17][18][19][20], to fiber-based ring lasers [1,[21][22][23][24][25][26]. While these single frequency devices may produce high power and a low linewidth, unfortunately, their tunability is typically low, on the order of a few nanometers.…”