Spectral control in multisection AlGaAs SQW superluminescentdiodes at 800 nm

QD Ultrafast and Continuous Wavelength Laser Diodes for Applications in Biology and Medicine

“…Later, the use of higher quantum transitions in QWs was considered a method to increase bandwidth. Simultaneous e 1 -h 1 and e 2 -h 2 transitions from a single AIGaAs/GaAs QW resulted in a 68 nm wide spectrum at 800 nm [91]. However, there are some disadvantages to this technique such as the emission spectrum being usually of an irregular shape and highly sensitive to the pumping power.…”

Multi section bandgap tuned superluminescent diodes fabricated by UV laser induced quantum well intermixing

“…Indeed, this type of device allows the excitation of both ground state and excited state on different electrodes. The principle was applied to quantum well [1] and quantum dot [2] [3] [4] based materials.…”

“…(1) . (2) where E is the traveling optical wave (frontward or backward), v g the group velocity, B the propagation constant, T the confinement factor, g m the material gain, a the linewidth enhancement factor, a s the modal loss, S the spontaneous emission, n(z) the carrier density, N s (z) and N(z) the photon rates of signal and spontaneous emission (N=|E| 2 ), I the injected current, K the normalization factor of random spontaneous emission and L, d, W are the waveguide length, thickness and width, respectively.…”

<title>Very high power superluminescent diodes as an alternative to fluorescent fiber-doped light sources</title>

“…Quantum-well structures allow to obtain very wide spectrum from SLDs [8,9]. Widening of spectrum in QW SLDs may be obtained by simultaneous light ampiffication by n=1 and n=2 transitions in QW.…”