Spectral dependence of photo- and electroluminescence on minority carrier concentration in the n-GaP/electrolyte system

Smandek, B.; Gerischer, H.

doi:10.1016/0013-4686(85)80180-8

Cited by 35 publications

(18 citation statements)

References 18 publications

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“…2). This spectral distribution is quite different from that measured in a conventional photoluminescence experiment at ambient temperature [16,20]. Electroluminescence with peroxydisulfate, in which holes are injected into the valence band of GaP at negative potential, is shown in Fig.…”

Section: Methodscontrasting

confidence: 72%

“…donor-acceptor pairs [16]. A similar emission spectrum, consisting of a broad band with a maximum at around 1.55 eV is also observed in room-temperature photoluminescence [16] and cathodoluminescence [18]. In our experiments with anodically etching GaP we find, surprisingly, not only the sub-bandgap luminescence but also relatively strong emission at higher energies; we observe a broad band extending well above the indirect bandgap.…”

Section: Introductionsupporting

confidence: 81%

“…At room temperature one generally observes only sub-bandgap emission due to electron-hole recombination via defect states, e.g. donor-acceptor pairs [16]. A similar emission spectrum, consisting of a broad band with a maximum at around 1.55 eV is also observed in room-temperature photoluminescence [16] and cathodoluminescence [18].…”

Section: Introductionmentioning

confidence: 80%

“…a strong oxidising agent [16]. Since GaP has an indirect bandgap (at 2.24 eV [17]) band-band emission is, except for isoelectronically doped material, very inefficient.…”

Section: Introductionmentioning

confidence: 99%

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Hot carrier luminescence during porous etching of GaP under high electric field conditions

et al. 2003

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Electroluminescence is observed during porous etching of n-type GaP single crystals at strongly positive potential. The emission spectra, which include a supra-bandgap contribution, are markedly different from the spectra observed under optical excitation or minority carrier injection. The current density and electroluminescence intensity show a strong potential dependence and a similar hysteresis. The spectral characteristics of the luminescence suggest that both thermalised and hot charge carriers, generated by impact ionisation, are involved in light emission.

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Section: Methodscontrasting

confidence: 72%

Section: Introductionsupporting

confidence: 81%

Section: Introductionmentioning

confidence: 80%

“…a strong oxidising agent [16]. Since GaP has an indirect bandgap (at 2.24 eV [17]) band-band emission is, except for isoelectronically doped material, very inefficient.…”

Section: Introductionmentioning

confidence: 99%

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Hot carrier luminescence during porous etching of GaP under high electric field conditions

et al. 2003

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“…For most semiconductors, a negative polarization of the electrode and the hydrogen evolution tend to degrade the surface, enhance surface recombination, and quench luminescence. 21,22 The unusual chemical stability of SiC is very likely responsible for this difference. The strong dependence of the I N /I B ratio on etch depth to large depths indicates that ͑sub-͒surface recombination cannot be ͑solely͒ responsible for the results shown in the inset of Fig.…”

Section: D50mentioning

confidence: 99%

Influence of Electrochemical Etching on Electroluminescence from n-Type 4H- and 6H-SiC

Dorp

Otter

Hijnen

et al. 2009

Electrochem. Solid-State Lett.

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The influence of electrochemical etching on the electroluminescence properties of n-type 6H-and 4H-SiC was investigated. Luminescence was generated by forward-biasing the semiconductor in an electrolyte solution containing a hole-injecting species. The emission properties of unetched, uniformly etched, and porous-etched substrates are compared. It is shown that the spectral distribution of the luminescence and the emission intensity strongly depends on photoanodic treatment.

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Licht als Sonde zur Untersuchung elektrochemischer Grenzflächenreaktionen

Gerischer

1988

Angew. Chem.

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Spektroskopische Methoden sind für das Studium von elektrochemischen Grenzflächenprozessen immer wichtiger geworden, seitdem ihre Empfindlichkeit so weit gesteigert werden konnte, daß auch Veränderungen der Lichtabsorption in Monoschichten erfaßbar wurden. Gleichzeitig hat die Entwicklung neuer, allerdings nur im Ultrahochvakuum anwendbarer Methoden in der Oberflächenphysik auf die Elektrochemie ausgestrahlt, indem diese Methoden auf Untersuchungen an Elektroden nach deren Überführung ins Ultrahochvakuum angewendet wurden. Parallel dazu hat die Verfügbarkeit von gut definierten Halbleitern, in denen durch Lichtabsorption Photoströme erzeugt werden können, zu einer Entwicklung photoelektrochemischer Methoden geführt, mit denen Elektrodenreaktionen sowohl an Halbleitern als auch an mit halbleitenden Deckschichten bedeckten Metallen untersucht werden können. Schließlich ist beim Studium der Halbleiterelektroden erkannt worden, daß man durch Redoxreaktionen an Elektroden Lumineszenz auslösen kann, woraus sich wichtige Erkenntnisse über den Ablauf von Elektronenübertragungsprozessen herleiten lassen. Über diese Entwicklungen wird hier zusammenfassend berichtet.

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Spectral dependence of photo- and electroluminescence on minority carrier concentration in the n-GaP/electrolyte system

Cited by 35 publications

References 18 publications

Hot carrier luminescence during porous etching of GaP under high electric field conditions

Hot carrier luminescence during porous etching of GaP under high electric field conditions

Influence of Electrochemical Etching on Electroluminescence from n-Type 4H- and 6H-SiC

Licht als Sonde zur Untersuchung elektrochemischer Grenzflächenreaktionen

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