Spectral Dynamical Behavior in Passively Mode-Locked Semiconductor Lasers

Stolarz, P.; Javaloyes, J.; Mezősi, G.; Hou, Lianping; Ironside, C. N.; Sorel, Marc; Bryce, A.C.; Balle, S.

doi:10.1109/jphot.2011.2172403

Cited by 36 publications

(29 citation statements)

References 22 publications

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“…Operation at a different temperature can lead to a significant difference in performance such us different central wavelength [21]. The PML described here operates around 1565 nm which is a 20 nm longer wavelength than the operating wavelength of the previous PML.…”

Section: Lettermentioning

confidence: 97%

Study of extra wide coherent optical combs generated by a QW-based integrated passively mode-locked ring laser

et al. 2017

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Section: Lettermentioning

confidence: 97%

Study of extra wide coherent optical combs generated by a QW-based integrated passively mode-locked ring laser

et al. 2017

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“…The material used was a MQW AlGaInAs/InP wafer structure, and a detailed description of the epitaxial layers can be found in [10]. This particular material was chosen because its ML behavior is well understood and documented, thanks to extensive characterization carried out previously [6]. Besides the insertion of a preliminary QWI step, the fabrication followed a standardized laser fabrication process, whose details can be found elsewhere [11].…”

Section: Device Design and Fabricationmentioning

confidence: 99%

“…The analysis in [5] suggested that such limitations are caused by the wavelength-dependent properties of the absorbing section. Starting from a situation of stable and complete ML (as defined in [6]), an increase of the gain section current directly translates into an increase of the SA photocurrent, with the associated Joule heating shifting the SA band edge away from that of the gain section, and the optimal conditions for ML ceasing.…”

Section: Introductionmentioning

confidence: 99%

Passive mode-locking in semiconductor lasers with saturable absorbers bandgap shifted through quantum well intermixing

Pusino¹,

Strain²,

Sorel³

2014

Photon. Res.

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Passive mode-locking in semiconductor lasers in a Fabry-Perot configuration with a bandgap blueshift applied to the saturable absorber (SA) section has been experimentally characterized. For the first time a fully post-growth technique, quantum well intermixing, was adopted to modify the material bandgap in the SA section. The measurements showed not only an expected narrowing of the pulse width but also a significant expansion of the range of bias conditions generating a stable train of optical pulses. Moreover, the pulses from lasers with bandgap shifted absorbers presented reduced chirp and increased peak power with respect to the nonshifted case.

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“…A lumped element time domain model has also been developed that eliminates the spatial dependence in favour of a delaydifferential equation for the field variable [13]. These models are efficient tools for understanding the physical origins of complex spectral and pulse shaping mechanisms in mode-locked semiconductor lasers [14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Dispersion-induced dynamics of coupled modes in a semiconductor laser with saturable absorption

O’Callaghan¹,

Osborne²,

O’Brien³

2014

Phys. Rev. A

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We present an experimental and theoretical study of modal nonlinear dynamics in a specially designed dual-mode semiconductor Fabry-Perot laser with a saturable absorber. At zero bias applied to the absorber section, we have found that with increasing device current, single mode self-pulsations evolve into a complex dynamical state where the total intensity experiences regular bursts of pulsations on a constant background. Spectrally resolved measurements reveal that in this state the individual modes of the device can follow highly symmetric but oppositely directed spiralling orbits. Using a generalization of the rate equation description of a semiconductor laser with saturable absorption to the multimode case, we show that these orbits appear as a consequence of the interplay between the material dispersion in the gain and absorber sections of the laser. Our results provide insights into the factors that determine the stability of multimode states in these systems, and they can inform the development of semiconductor mode-locked lasers with tailored spectra.

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Spectral Dynamical Behavior in Passively Mode-Locked Semiconductor Lasers

Cited by 36 publications

References 22 publications

Study of extra wide coherent optical combs generated by a QW-based integrated passively mode-locked ring laser

Study of extra wide coherent optical combs generated by a QW-based integrated passively mode-locked ring laser

Passive mode-locking in semiconductor lasers with saturable absorbers bandgap shifted through quantum well intermixing

Dispersion-induced dynamics of coupled modes in a semiconductor laser with saturable absorption

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