2011
DOI: 10.1016/j.optlastec.2010.04.019
|View full text |Cite
|
Sign up to set email alerts
|

Spectral features of Co–Ge–Te amorphous thin film

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1

Citation Types

1
6
0

Year Published

2012
2012
2022
2022

Publication Types

Select...
6

Relationship

0
6

Authors

Journals

citations
Cited by 16 publications
(7 citation statements)
references
References 16 publications
1
6
0
Order By: Relevance
“…Such type of high refractive index values are also reported in other chalcogenide glasses [45][46][47][48][49][50]. These type of high refractive index values can be attributed to the structural rearrangemnets, i.e., topological phase transition from 2-dimensional to 3-dimensional structure [49].…”
supporting
confidence: 65%
“…Such type of high refractive index values are also reported in other chalcogenide glasses [45][46][47][48][49][50]. These type of high refractive index values can be attributed to the structural rearrangemnets, i.e., topological phase transition from 2-dimensional to 3-dimensional structure [49].…”
supporting
confidence: 65%
“…These amorphous thin films are important in various technological areas because they exhibit some of the optical properties of their crystalline counterparts. Similar to other deposited thin films, the properties of amorphous chalcogenide thin films also dramatically depend on their deposition conditions [1][2][3][4][5][6][7]. The deposition of chalcogenide thin films is achieved by vacuum thermal evaporation [8], thermal evaporation [9], the flash evaporation method [10] and chemical bath deposition (CBD) [11].…”
Section: Introductionmentioning
confidence: 99%
“…The as-deposited thin film shows in an amorphous structure while the annealed film shows in a cubic structure (c-GeSbTe), as confirmed by major XRD peaks of (111), (200), (222), and (220) planes according to PDF# 054-0484 data [12]. These XRD peaks have been demonstrated in the crystallinity and the crystal structure of intermediate states during the amorphous-crystalline solid-state transformation within sequentially annealing temperature [7][8][9][10][11]13]. The crystallite sizes (D), lattice strains (ε), and lattice parameters of c-GeSbTe thin films were evaluated from a width at half maximum (FWHM) of XRD patterns, based on the Scherrer's equation as the following:…”
Section: Resultsmentioning
confidence: 75%
“…Moreover, in modern technology, Ge-Sb-Te chalcogenide ternary compounds are widely used because of their stable phase transformation between amorphous and crystalline phases [7]. The Ge-Sb-Te system has studied the several possible compositions of GeSb 2 Te 4 , GeSb 4 Te 7 , and Ge 2 Sb 2 Te 5 shown in a Ge-Sb-Te phase diagram [8][9].…”
Section: Introductionmentioning
confidence: 99%