Spectral photoconductivity and in-plane photovoltage studies of as-grown and annealed GaInNAs/GaAs and GaInAs/GaAs quantum well structures

Erol, Ayşe; Akçay, Namık; Arıkan, Mehmet Kemal; Mazzucato, Simone; Balkan, N.

doi:10.1088/0268-1242/19/9/003

Cited by 14 publications

(10 citation statements)

References 26 publications

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“…The PL peak values at 77 K as well as 300 K values (figure is not given) here for all the samples together with the blue-shift amounts and FWHM values are summarized in Table 1. The blue-shift mechanism was explained by us in terms of two competing mechanisms: The redistribution of nearest neighbor configuration and the change of quantum well profile [6]. The thermal annealing procedure allows a redistribution of atoms in the crystal lattice and the material system relaxes to the most favorable atomic configuration changing from Ga4N to In4N.…”

Section: Methodsmentioning

confidence: 99%

The effects of quantum well numbers and thermal annealing on optical properties of GaInNAs/GaAs quantum well structures

Basak

Erol

Donmez

et al. 2011

Phys. Status Solidi C

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As‐grown and annealed Ga0.6In0.4N0.005As0.995/GaAs with 1, 3, and 7 quantum well structures grown by Molecular Beam Epitaxy (MBE) are investigated using Photoluminescence (PL) and Photo‐Induced Current Transient Spectroscopy (PICTS) measurements in order to determine the effects of the number of quantum wells and thermal annealing on optical properties and qualities of the structures. PICTS results reveal that all the samples with different quantum well numbers have two dominate trap levels which related to GaInNAs layer (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Methodsmentioning

confidence: 99%

The effects of quantum well numbers and thermal annealing on optical properties of GaInNAs/GaAs quantum well structures

Basak

Erol

Donmez

et al. 2011

Phys. Status Solidi C

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“…Even a small percentage of N causes a large redshift of the band gap; therefore, incorporation of N into the III-V lattice brings more flexibility to tailor the band gap of the material [5]. However, the optical quality of dilute nitrides is drastically affected by the presence of N. Post- or in situ thermal annealing has been used as an effective method to improve optical and crystal qualities, but this process is responsible for a significant blueshift of the band gap energy [6,7]. The reason of the blueshift has been theoretically explained with the considerations of re-arrangement of the nearest neighbour configuration of the N environment [8] and re-shaping of quantum well (QW) from a square to a parabolic-like shape due to Ga-In interdiffusion [6].…”

Section: Introductionmentioning

confidence: 99%

Excitation energy-dependent nature of Raman scattering spectrum in GaInNAs/GaAs quantum well structures

et al. 2012

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The excitation energy-dependent nature of Raman scattering spectrum, vibration, electronic or both, has been studied using different excitation sources on as-grown and annealed n- and p-type modulation-doped Ga1 − xInxNyAs1 − y/GaAs quantum well structures. The samples were grown by molecular beam technique with different N concentrations (y = 0%, 0.9%, 1.2%, 1.7%) at the same In concentration of 32%. Micro-Raman measurements have been carried out using 532 and 758 nm lines of diode lasers, and the 1064 nm line of the Nd-YAG laser has been used for Fourier transform-Raman scattering measurements. Raman scattering measurements with different excitation sources have revealed that the excitation energy is the decisive mechanism on the nature of the Raman scattering spectrum. When the excitation energy is close to the electronic band gap energy of any constituent semiconductor materials in the sample, electronic transition dominates the spectrum, leading to a very broad peak. In the condition that the excitation energy is much higher than the band gap energy, only vibrational modes contribute to the Raman scattering spectrum of the samples. Line shapes of the Raman scattering spectrum with the 785 and 1064 nm lines of lasers have been observed to be very broad peaks, whose absolute peak energy values are in good agreement with the ones obtained from photoluminescence measurements. On the other hand, Raman scattering spectrum with the 532 nm line has exhibited only vibrational modes. As a complementary tool of Raman scattering measurements with the excitation source of 532 nm, which shows weak vibrational transitions, attenuated total reflectance infrared spectroscopy has been also carried out. The results exhibited that the nature of the Raman scattering spectrum is strongly excitation energy-dependent, and with suitable excitation energy, electronic and/or vibrational transitions can be investigated.

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“…The PL emission before annealing clearly shows strong S‐shape features in both the peak emission and FWHM. However, after annealing the S‐shape behaviours are significantly reduced, indicating a reduction of alloy disorder and therefore of localization affects all be it at the cost of a slight blueshift 18, 28.Thus, the temperature dependence of peak position, FWHM and integrated intensity of PL spectra change by inserting small value of nitrogen to the host matrix semiconductor (InGaAs) that they are investigated and interpreted by LSE model in the following.…”

Section: Resultsmentioning

confidence: 99%

“…The RTA sample ( B r ) exhibits a blueshift emission of about 67 meV and decreasing of FWHM by about 5.78 meV with respect to the as‐grown sample ( B a ). These phenomena are attributed to two different effects: changes (i) in the nearest‐neighbor configuration of N due to increasing numbers of In–N bonds (ii) well‐width fluctuations due to the interdiffusion of In–Ga atoms and (iii) reduction of the point defects 18, 26.…”

Section: Resultsmentioning

confidence: 99%

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Investigation of the localization effect in InGaNAs/GaAs SQWs using the LSE model

Abdoli

Haratizadeh

2009

phys. stat. sol. (b)

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In this paper, the temperature behaviors of photoluminescence (PL) spectra of as-grown and annealed InGaASN/GaAs single quantum-well (SQW) samples with different nitrogen levels have been investigated by means of the localized-state ensemble (LSE) model. The variations of PL peak position and linewidth versus temperature are attributed to the creation of a fluctuation potential in the band edge of the host material from the nonuniform distribution of nitrogen in the structure. The anomalous thermal behaviors have been investigated by using the LSE model and a good agreement between experimental and theoretical results has been observed, especially at low temperature. The LSE model predicts a reduction of the localized states in rapid thermal annealed (RTA) samples compared to the as-grown state.

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Spectral photoconductivity and in-plane photovoltage studies of as-grown and annealed GaInNAs/GaAs and GaInAs/GaAs quantum well structures

Cited by 14 publications

References 26 publications

The effects of quantum well numbers and thermal annealing on optical properties of GaInNAs/GaAs quantum well structures

The effects of quantum well numbers and thermal annealing on optical properties of GaInNAs/GaAs quantum well structures

Excitation energy-dependent nature of Raman scattering spectrum in GaInNAs/GaAs quantum well structures

Investigation of the localization effect in InGaNAs/GaAs SQWs using the LSE model

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