Spectral photoresponses and transport properties of polymorphous silicon thin films

Device grade hydrogenated polymorphous silicon deposited at high rates

“…In addition, the dark conductivity r d and its activation energy E a were found in the range 1-5 Â 10 À11 S cm À1 and 0.7-0.9 eV, respectively, which are both characteristic of undoped samples. Values of l n s n and L d obtained in the initial state are comparable to those measured on pm-Si:H having equivalent r d and E a and deposited around 1 Å /s [8,12]. Indeed, in the initial state, L d takes values higher than 200 nm, reaching a maximum of 290 nm.…”

Estimations of Carrier Mobility and Trapped-Carrier Density of States for Microcrystalline Silicon Semiconductors from Analysis of Field Dependent Steady-State Photocarrier Grating Measurements

“…Our estimation to hole mobility values at room temperature disagree by two orders of magnitude with those measured by the transient photocurrent technique [11] and three order of magnitude by those found by the field-effect hole mobility measurement [12], but they agree with those measured by TOF experiment [13]. Moreover, the values of electron mobility differ by almost one order of magnitude to that measured by TOF experiment [13].…”

“…Moreover, the values of electron mobility differ by almost one order of magnitude to that measured by TOF experiment [13]. Our results also show that /J'" ^ /j" which is an indication that both types of mobility depend on concentration.…”

Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition rates

“…1) and in the range 2.6 · 10 À7 -2.5 · 10 À6 cm À2 V À1 for G dc % 2 · 10 17 cm À3 s À1 (not shown). Though these values are much lower than those obtained for pm-Si:H samples having equivalent r d and E a [7,8], they are found in the same order of magnitude as those of a-Si:H samples [7,10].…”

“…In Fig. 2 the MPC-DOS of a 3.3 lm thick pm-Si:H sample as a reference film having very good electron transport properties is also presented [8]. The DOS of our sample is slightly higher (by a factor of 2) than that of the pm-Si:H sample.…”