Spectrally agile far-infrared detector using an n-i-p-i superlattice

Ruden, P.P.; Marttila, Charles A.; Werner, Thomas R.; Carroll, J.E.

doi:10.1063/1.343471

Cited by 5 publications

(2 citation statements)

References 7 publications

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“…Ruden [189] discussed using a homogeneously doped nipi (ie not £-doped) to reduce the (effective) bandgap of InSb to the 10 pm range. Ruden's calculations considered tunelling assisted interband absorption (Franz-Keldysh effect [169]).…”

Section: Sawtooth Superlattice Infrared Detectorsmentioning

confidence: 99%

III-V Detectors

2010

Infrared Detectors

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The quantum-well infrared photodetector (QWIP) is a relatively new type of semiconductor detector which has a clearly defined spectral response. This study shows that the infrared spectral response of a QWIP can be fine tuned. We have fabricated AlGaAs-GaAs QWIPs, and used proton implantation and rapid thermal annealing to tune the infrared spectral response of these QWIPs by up to 1.4 pm. Multiple proton implants at energies between 200 and 400 keV were used to create homogeneous quantum-well intermixing throughout the de vices' multiple-quantum-well structure. Photoluminescence and photoresponse measurements were used to study the effect of proton implantation on QWIPs for a series of doses up to 3.5 x 1015 protons cm-2. By using a mask during im plantation, a method of constructing a colour sensitive array is proposed. The dynamics in quantum-wells with similar properties to QWIPs were investigated. The capture of electron-hole pairs into a quantum-well increased after the sam ple was intermixed. Thus intermixed QWIPs may exhibit improved electrical response bandwidths. The dynamic properties of a sawtooth superlattice (<5-doped nipt) were ex amined by photoluminescence spectroscopic techniques. The dynamic properties of the sawtooth superlattice were probed using time resolved photoluminescence and carrier lifetime measurements. £-doped sawtooth superlattices are shown to have a tunable bandgap as well as an intensity tunable carrier lifetime. These properties may prove useful in the development of a wavelength tunable inter subband nipi infrared detector. Thermal quenching of photoluminescence from GaAs-InGaAs and AlGaAs-GaAs quantum-wells has been shown to be dependent on the intensity of excita tion. We believe this intensity dependence is related to the presence of saturable non-radiative recombination paths via hetero-interface defects. Additionally, an increase in photoluminescence intensity as a function of temperature has been observed at low temperatures. These results are linked to the presence of sat urable defect states, possibly surface states. Firstly I would like to thank my supervisor, Professor Mike Gal for everything he has taught me during my studies. His enthusiasm, knowledge and advice have helped maintain the direction of this thesis, while the responsibility and freedom he has given me has allowed me to follow some of my own odd ideas. Dr C. Jagadish has been a constant source of encouragement and useful collaboration, both with his group at the Australian National University and with the Chinese Academy of Sciences. Without the expertise, time and facilities of his group this project would not have been possible. Dr. Lap van Dao has constructed the photoluminescence up-conversion sys tem in our laboratory. His skill in lasers and optics is exceptional. Thanks to Lap for many discussions on carrier dynamics in quantum-wells. Sincere thanks to Dr. Nancy Lumpkin for spending so many hours teaching me semiconductor device fabrication and for sharing her excellent methods with me. The fabri...

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Section: Sawtooth Superlattice Infrared Detectorsmentioning

confidence: 99%

III-V Detectors

2010

Infrared Detectors

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“…It was suggested that the reduced effective bandgap of a nipi could be used to extend the IR response of interband detectors such as InSb to longer wavelength[189,167].…”

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confidence: 99%

Quantum Well Infrared Photodetectors

Xu¹,

Jiang²

2010

Infrared Detectors

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The quantum-well infrared photodetector (QWIP) is a relatively new type of semiconductor detector which has a clearly defined spectral response. This study shows that the infrared spectral response of a QWIP can be fine tuned. We have fabricated AlGaAs-GaAs QWIPs, and used proton implantation and rapid thermal annealing to tune the infrared spectral response of these QWIPs by up to 1.4 pm. Multiple proton implants at energies between 200 and 400 keV were used to create homogeneous quantum-well intermixing throughout the de vices' multiple-quantum-well structure. Photoluminescence and photoresponse measurements were used to study the effect of proton implantation on QWIPs for a series of doses up to 3.5 x 1015 protons cm-2. By using a mask during im plantation, a method of constructing a colour sensitive array is proposed. The dynamics in quantum-wells with similar properties to QWIPs were investigated. The capture of electron-hole pairs into a quantum-well increased after the sam ple was intermixed. Thus intermixed QWIPs may exhibit improved electrical response bandwidths.The dynamic properties of a sawtooth superlattice (<5-doped nipt) were ex amined by photoluminescence spectroscopic techniques. The dynamic properties of the sawtooth superlattice were probed using time resolved photoluminescence and carrier lifetime measurements. £-doped sawtooth superlattices are shown to have a tunable bandgap as well as an intensity tunable carrier lifetime. These properties may prove useful in the development of a wavelength tunable inter subband nipi infrared detector.Thermal quenching of photoluminescence from GaAs-InGaAs and AlGaAs-GaAs quantum-wells has been shown to be dependent on the intensity of excita tion. We believe this intensity dependence is related to the presence of saturable non-radiative recombination paths via hetero-interface defects. Additionally, an increase in photoluminescence intensity as a function of temperature has been observed at low temperatures. These results are linked to the presence of sat urable defect states, possibly surface states.Firstly I would like to thank my supervisor, Professor Mike Gal for everything he has taught me during my studies. His enthusiasm, knowledge and advice have helped maintain the direction of this thesis, while the responsibility and freedom he has given me has allowed me to follow some of my own odd ideas.Dr C. Jagadish has been a constant source of encouragement and useful collaboration, both with his group at the Australian National University and with the Chinese Academy of Sciences. Without the expertise, time and facilities of his group this project would not have been possible.Dr. Lap van Dao has constructed the photoluminescence up-conversion sys tem in our laboratory. His skill in lasers and optics is exceptional. Thanks to Lap for many discussions on carrier dynamics in quantum-wells.Sincere thanks to Dr. Nancy Lumpkin for spending so many hours teaching me semiconductor device fabrication and for sharing her excellent methods with me. The fabrication...

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Trapezoidal Delta-Doped Superlattice for Far-Infrared Detection

Осипов¹,

Selyakov²,

Foygel

1998

phys. stat. sol. (a)

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A new superlattice is proposed that is based on non‐degenerate single‐crystal conventional semiconductors of InSb, InAs, GaAs, and Ge type. The superlattice consists of alternating pairs of δ‐doped ultra‐thin layers of p and n type. The distance between the identical layers of p (or n) type, that constitute a pair, is chosen in such a way that the energy spectrum of holes (or electrons) in quasi‐continuous. The distance between two adjacent pairs of layers of p and n type is sufficiently small, so that an extra‐large built‐in electric field may be generated in the regions between the pairs. In such a superlattice, potential has a trapezoidal shape and can be viewed as a periodic set of alternating non‐quantized wells for electrons and holes that are separated by very thin regions of extra‐large field. We found that the light absorption in the regions of extra‐large field is significant up to 3 μm for the GaAs superlattice and up to 4.5 μm for the Ge superlattice. For the InSb and InAs superstructures, the interband absorption coefficient is close to its fundamental‐band edge value and slightly depends on the wavelength up to 50 to 100 μm. In contrast to the quantum‐well superlattices, the proposed superstructure a) does not have heterojunctions and b) absorbs IR radiation of any polarization in a very wide spectral region. Effective spatial separation of photo‐generated carriers ensures their lifetimes to be gigantic thus achieving a high level of photo‐response.

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Spectrally agile far-infrared detector using an n-i-p-i superlattice

Abstract: Schematic band diagram of an n-p doped slIperlattice for three different states. (a) Ground state; (b) with some electrons and holes extracted; and (c) with charge carners injected.956

Cited by 5 publications

References 7 publications

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