Spectrally Resolved Thermoluminescence of Anion‐Deficient Al₂O₃–BeO Ceramics for High‐Dose Dosimetry

Abstract

Thermoluminescence (TL) curves of Al2O3–BeO ceramic samples synthesized during high‐temperature treatment of nanostructured Al2O3 compacts in vacuum with the presence of graphite in BeO crucibles are studied. Temperature ranges of certain TL peaks emission at the synthesis temperature varied from 1200 to 1400 °C are found. A comparative analysis of the TL peaks temperature position and the nature of traps in the obtained ceramics with single crystalline Al2O3, BeO, and BeAl2O4 analogs is carried out. Spectral composition of different TL peaks is investigated. It is found that oxygen vacancies and their aggregates play the main role in the TL emission centers formation in the samples under study. A complex structure of the dominating luminescence band at 4.0 eV in the dosimetric peak at 530 K of the ceramics synthesized at 1400 °C is found. This band is shown to be a superposition of three bands with the maxima at 3.11, 3.80, and 4.17 eV, resulted from F, F+ centers and presumably from Fcat‐type centers in aluminum oxide. The obtained results are essential to control and modify TL properties of Al2O3–BeO ceramics to create luminescence detectors of high‐dose radiation.

Optical, Structural, and Mechanical Properties of Gd3Ga5O12 Single Crystals Irradiated with 84Kr+ Ions

“…[ 18,19 ] In the last few decades, many proven efforts have been spent to study the optical properties and structural defect inhomogeneities caused by both the growth procedure and the radiation‐induced point and extended defects in Gd 3 Ga 5 O 12 single crystals. [ 3,5,14,20–27 ] It should be noted here that, in contrast to well‐studied oxide materials, such as MgO, CaO, Al 2 O 3 , MgAl 2 O 4 , etc., [ 28–45 ] the existing understanding of the nature of radiation defects and appropriate radiation‐induced processes in Gd 3 Ga 5 O 12 is still insufficient.…”

“…[18,19] In the last few decades, many proven efforts have been spent to study the optical properties and structural defect inhomogeneities caused by both the growth procedure and the radiation-induced point and extended defects in Gd 3 Ga 5 O 12 single crystals. [3,5,14,[20][21][22][23][24][25][26][27] It should be noted here that, in contrast to well-studied oxide materials, such as MgO, CaO, Al 2 O 3 , MgAl 2 O 4 , etc., [28][29][30][31][32][33][34][35][36][37][38][39][40][41][42][43][44][45] the existing understanding of the nature of radiation defects and appropriate radiation-induced processes in Gd 3 Ga 5 O 12 is still insufficient. This is mainly due to the lack of experimental data, which, in turn, is associated with the low efficiency of point defect formation in Gd 3 Ga 5 O 12 single crystals.…”