Spectrometry of short-range ions using detectors based on 4H-SiC films grown by chemical vapor deposition

Strokan, N. B.; Иванов, А. М.; Kalinina, Evgenia V.; Kholuyanov, G.; Onushkin, Grigory; Davydov, Denis; Violina, G. N.

doi:10.1134/1.1882803

Cited by 7 publications

(7 citation statements)

References 3 publications

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“…An increase in the CCE (i.e., a more complete charge transfer) is accompanied by improved resolution (smaller linewidth). The observed minimum FWHM = 1.35% does not reach the best level (0.34%) obtained previously [2]. As was noted above, this is primarily related to a non-optimized entrance window structure.…”

Section: Introduction Wide-bandgap Semiconductorscontrasting

confidence: 52%

“…Previously, we have used undoped CVD epilayers of 4H-SiC with a thickness of up to 30-50 µ m for the creation of detectors with chromium Schottky barriers, which exhibited an energy resolution of 0.5-0.34% (for α particles) that was comparable with the parameters of Si detectors [1,2]. The diode structures with Schottky barriers based on such epilayers were successfully used as α and X-ray detectors at 90 and 107 ° C, respectively [3,4], showing no dependence of the charge collection efficiency (CCE) on the temperature.…”

Section: Introduction Wide-bandgap Semiconductorsmentioning

confidence: 99%

“…Assuming that the average donor concentration in the initial 4H-SiC plate is N d -N a = 5 × 10 14 cm -3 , we obtain an estimate of W = 18.1 µm. Since the hole diffusion length is L p > 10 µm [2], the indicated bias is sufficient to provide for the complete transfer (collection) of a charge introduced into the interelectrode region of the detector. Note that the CCE values, despite attaining a constant level, remain lower than unity, which is related to a non-optimized design of the detector entrance window.…”

Section: Introduction Wide-bandgap Semiconductorsmentioning

confidence: 99%

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10.1007/s11455-008-3010-6

2010

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The spectrometric characteristics of nuclear radiation detectors based on 4H-SiC films with iondoped p + -n junctions have been studied for the first time in a temperature range from 25 to 375 ° C. The experiments with 5.8-MeV α particles were performed in a high-temperature chamber of special design. Factors related to the structural characteristics of both the initial silicon carbide and the ion-doped p + -n junctions are established, which limit from above the temperature interval of detector operation in a spectrometric regime. An increase in the efficiency of the diffusion-drift charge transport with increasing temperature has been observed, which is explained by an increase in the diffusion length of minority carriers.

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Section: Introduction Wide-bandgap Semiconductorscontrasting

confidence: 52%

Section: Introduction Wide-bandgap Semiconductorsmentioning

confidence: 99%

Section: Introduction Wide-bandgap Semiconductorsmentioning

confidence: 99%

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10.1007/s11455-008-3010-6

2010

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“…It was noted that there is no negative polarization effect, which confirms the purity of the material with respect to carrier capture centers [6]. Owing to the high uniformity of the starting material and the low generation currents in SiC, energy resolutions of about 0.75% and 0.35% on structures with Au/Pt/Ti [7] and Cr SBs [8,9], respectively, were obtained in testing with 5-8 MeV alpha particles. The value of 0.35% is only two times inferior to the energy resolution of silicon detectors from the 'high-precision' group.…”

Section: Introductionmentioning

confidence: 89%

Structure and characteristics of the high-temperature SiC detectors based on Al ion-implanted p⁺–n junctions

Kalinina¹,

Иванов²,

Strokan³

et al. 2011

Semicond. Sci. Technol.

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Al ion implantation of chemical-vapor deposition (CVD)-grown n-type films has been used to fabricate p + -n junctions for nuclear particle detectors. The junction formation mode is characterized by a high dose of Al ions and a short-duration (15 s) activating annealing. Specific structural features of the implanted p + -n junctions, revealed using modern analytical techniques, are accounted for by the joint action of the high-dose Al ion implantation and unconventional rapid thermal annealing mode. The detector characteristics were studied up to a temperature of 375 • C under irradiation with 3-8 MeV alpha particles in a vacuum chamber of special design. An improvement of the energy resolution and nonequilibrium charge collection efficiency was observed with increasing temperature. The results obtained are explained in terms of specific structural features of the p + -n junctions formed in the chosen implantation and thermal annealing modes. The behavior of the detector noise level was analyzed with the working temperature raised up to 375 • C.

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“…At present, to create detectors with increased radiation resistance, and good energy resolution as compared to Si-detectors, silicon carbide (polytype of 4H-SiC) is actively used [2][3][4][5][6]. This is due to the fact that this material has a larger band gap energy (3 times) and the threshold energy of defect formation (2 times) in comparison with silicon [7,8].…”

Section: Introductionmentioning

confidence: 99%

Characteristics of Si and SiC detectors at registration of Xe ions

et al. 2018

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The results of an investigation of silicon (Si) and silicon carbide (SiC) detectors when irradiated with a beam of Xenon (Xe) ions are presented. The irradiation was carried out at the IC-100 cyclotron, JINR, Dubna. The effect of the Pulse Height Defect (PHD) in registering Xe ions with energies 165, 82 and 45 MeV is shown to be twice as large for SiC detectors as that for Si detectors. It is also shown that degradation of SiC detectors irradiated with heavy Xe ions occurs at doses an order of magnitude greater than for Si detectors. The measurement method described, including continuous detector calibration by alpha-particles, makes it possible to simultaneously control the characteristics of detectors during irradiation and determine the energy of a beam of ions.

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Spectrometry of short-range ions using detectors based on 4H-SiC films grown by chemical vapor deposition

Cited by 7 publications

References 3 publications

10.1007/s11455-008-3010-6

10.1007/s11455-008-3010-6

Structure and characteristics of the high-temperature SiC detectors based on Al ion-implanted p⁺–n junctions

Characteristics of Si and SiC detectors at registration of Xe ions

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Spectrometry of short-range ions using detectors based on 4H-SiC films grown by chemical vapor deposition

Cited by 7 publications

References 3 publications

10.1007/s11455-008-3010-6

10.1007/s11455-008-3010-6

Structure and characteristics of the high-temperature SiC detectors based on Al ion-implanted p+–n junctions

Characteristics of Si and SiC detectors at registration of Xe ions

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Structure and characteristics of the high-temperature SiC detectors based on Al ion-implanted p⁺–n junctions