Spectroscopy of silicon dioxide films grown under negative corona stress

Abstract

Static and dynamic magnetic properties of epitaxial Fe1.7Ge thin films grown on Ge(111) J. Appl. Phys. 111, 07D502 (2012) Design and fabrication of Dy-free sintered permanent magnets with high coercivity J. Appl. Phys. 111, 07A710 (2012) In situ study of the growth properties of Ni-rare earth silicides for interlayer and alloy systems on Si(100) J. Appl. Phys. 111, 043511 (2012) Well-isolated L10 FePt-SiNx-C nanocomposite films with large coercivity and small grain size J. Appl. Phys. 111, 07A308 (2012) Tuning of magnetization dynamics in sputtered CoFeB thin film by gas pressure J. Appl. Phys. 111, 07A304 (2012) Additional information on J. Appl. Phys. Silicon dioxide films were grown in oxygen ambient under negative corona stress at low temperatures ͑400-450°C͒. Fourier transform infrared spectra of these films show a peak at 935 cm Ϫ1 along with the conventional transverse optic mode peaks around 1074, 800, and 456 cm Ϫ1. A broad shoulder at 1150 cm Ϫ1 was also observed. The extra peak is attributed to the presence of SiO 4 2Ϫ ions and could be the outcome of incomplete oxidation at the surface. The films indicated properties similar to a fully relaxed thermally grown silicon dioxide film with a contradictory nature. The results of these experiments can be comprehensively explained only by assuming the presence of some mixed phase of SiO 2 .

A comparison of structures and properties of SiNx and SiOx films prepared by PECVD

“…In contrast, the absorption bands in Fig Fig. 4b suggests that the product is close to the stoichiometric SiO 2 [1,11]. Characterization of the as-prepared thin films by XPS provides further structural information.…”

“…4b are ascribed to: Si-O out of phase stretching mode at 1155 cm − 1 , Si-O in phase stretching mode at 1073 cm − 1 , Si-O bending vibration mode at 816 cm − 1 , Si-O rocking mode at 462 cm − 1[1,2,11]. These indicate the existence of several Si-N…”

“…However, SiOx films cannot satisfy the severe requirements from the miniaturization of devices and increasing circuit complexity in the future [1,2]. The practical limit of thin (50 nm) SiOx films with pinhole free requires further seeking compatible materials which have higher dielectric constant and can be of larger thickness in device fabrications.…”

Thickness and Fourier transform infrared peak instability in silicon dioxide thin films deposited using electron-gun deposition

“…Silicon dioxide can be fabricated using a wide variety of techniques, including reactive ion etching, 1 dc and rf sputtering, 2-4 thermal oxidation, 5 chemical vapor deposition ͑CVD͒ and pyrolytic deposition, 6 plasma CVD, 7 and electron beam evaporation. 11 Using Fourier transform infrared ͑FTIR͒ spectroscopy and ellipsometry techniques, we have studied the thickness and the chemical properties of electron beam deposited SiO 2 films over time when exposed to atmosphere and directly to water. Silicon dioxide is also commonly used in semiconductor and microelectronic applications due to its compatibility and interface with silicon.…”

Fabrication of resonant optical waveguide biosensors using electron gun depositions

“…Si-OH bonds from strained Si-O bonds and then reverting back to Si-O bonds which are less strained [20]. Others have attributed the strain to water inside the films, desorption of water over time from the film allows it to relax [21].…”