Spice-aided modelling of the UC3842 current mode PWM controller with selfheating taken into account

Zarębski

2018

Circuit Theory & Apps

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In this paper, properties of the alkaline electrolyser fed from the voltage source, producing the rectangular pulse train, were investigated. A model of this electrolyser for SPICE in the form of an electrical network was proposed. The structure of this electrical model was described, and the values of parameters of the model were presented. The correctness of this model was verified experimentally in a wide range of frequency. Using the worked out model, several characteristics of the electrolyser were calculated, and the influence of amplitude, frequency, and the duty factor of the supplying voltage on productivity and watt-hour efficiency of the electrolysis process was discussed. The investigations were performed for 2 different concentration values of the KOH solution.

Section: Electrolyser Modelmentioning

confidence: 99%

Electrical model of the alkaline electrolyser dedicated for SPICE

Zarębski

2018

Circuit Theory & Apps

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“…As it is shown in Górecki et al (2019) and Górecki et al (2019a), these processes can cause changes in the course of characteristics of such devices. Additionally, during operation of semiconductor devices their internal temperature increases as a result of both: an increase in ambient temperature and self-heating phenomena (Zarębski and Górecki, 2007; Górecki and Górecki, 2017; Mawby et al , 2001; Zarębski and Górecki, 2009; Janicki et al , 2014). This phenomena are caused by an exchange of electrical energy dissipated in this device into heat at not ideal removal of heat to the surroundings (Górecki et al , 2017; Zarębski and Górecki, 2007; Górecki and Górecki, 2017; Wu et al , 2016; Hapka et al , 2012; Mawby et al , 2001; Zarębski and Górecki, 2009).…”

Section: Introductionmentioning

confidence: 99%

Compact electrothermal model of laboratory made GaN Schottky diodes

2020

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Purpose The purpose of this paper is to propose a simple electrothermal model of GaN Schottky diodes, and its usefulness for circuit-level electrothermal simulation of laboratory-made devices is proved. Design/methodology/approach The compact electrothermal model of this device has the form of a subcircuit for simulation program with integrated circuit emphasis. This model takes into account influence of a change in ambient temperature in a wide range as well as influence of self-heating phenomena on dc characteristics of laboratory-made GaN Schottky diodes. The method of model parameters estimation is described. Findings It is shown that temperature influences fewer characteristics of GaN Schottky diodes than classical silicon diodes. The discussed model accurately describes properties of laboratory made GaN Schottky diodes. Additionally, the measured and computed characteristics of these diodes are shown and discussed. Research limitations/implications The presented model together with the results of measurements and computations is dedicated only to laboratory-made GaN Schottky diodes. Originality/value The presented investigations show that characteristics of laboratory-made GaN Schottky diodes visibly change with temperature. These changes can be correctly estimated using the compact electrothermal model proposed in this paper. The correctness of this model is proved for four structures of such diodes characterised by different values of structure area and a different assembly process.

“…In the power electronic circuits, to which also switching‐mode voltage regulators belong, the phenomenon of self‐heating in components of these regulators has essential meaning . To take into account self‐heating in computer analyses, the use of special electrothermal models of the considered devices is indispensable.…”

Section: Introductionmentioning

confidence: 99%

Electrothermal model of monolithic TOPSwitch regulators

Int J Numerical Modelling

2013

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In the paper, an electrothermal compact model of monolithic switching-mode voltage regulators belonging to the TOPSwitch family is proposed. The description of this model and some results of the experimental verification of its correctness on the example of the regulator TOP222Y are presented. The proposed model can be used to calculate the terminal voltages and currents of the investigated device and the internal temperature of this regulator, too. The satisfying agreement between the calculated and measured characteristics of the switching-mode power supply including the considered integrated circuit was reached.