SPICE modeling of light induced current in silicon with ‘Generalized’ lumped devices

Rossi, Chiara; Buccella, Pietro; Stefanucci, Camillo; Sallèse, Jean-Michel

doi:10.1109/essderc.2017.8066583

Cited by 3 publications

(2 citation statements)

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“…Preliminary results including photogeneration of free carriers upon light absorption were presented at the ESSDERC 2017 conference [4]. The optically generated minority carriers were 'injected' by means of external voltage sources connected to the minority carrier nodes of the enhanced devices.…”

Section: Introductionmentioning

confidence: 99%

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SPICE Modeling of Photoelectric Effects in Silicon With Generalized Devices

Rossi

Buccella

Stefanucci³

et al. 2018

IEEE J. Electron Devices Soc.

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Modeling photoelectric effects in semiconductors with electrical simulators is demonstrated in typical 1-D and 2-D architectures. The concept is based on a coarse meshing of the semiconductor with the so-called generalized lumped devices, where equivalent voltages and currents are used in place of minority carrier excess concentrations and minority carrier gradients, respectively, and where the light-induced excess carrier concentration in silicon is introduced by means of internal current sources. Generation, propagation, and collection of these minority carriers are analyzed for different structures which can behave as photosensors or solar cells. Both static and transient operations are found in good agreement with TCAD numerical simulations while using the same physical and geometrical parameters.

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Section: Introductionmentioning

confidence: 99%

“…It is the aim of this work to extend the concept proposed in [4] for long pulse and DC operation. The models of the generalized lumped devices are thus modified so that the generation of minority carriers is now taken into account internally, embedded in the devices, without the need for any external voltage sources and switches.…”

Section: Introductionmentioning

confidence: 99%