SPICE modeling of memristive, memcapacitative and meminductive systems

PSPICE modeling of meminductor

“…Since the key parameter of the device, resistance in the case of memristor, can be changed only within bounds that are given by the physical limitations of a concrete implementation, the HP memristor must be modeled as a more general memristive system [19]. Analogously, it is shown in [12,16] that the memcapacitor and the meminductor are special cases of more general memcapacitive and meminductive systems. In order to model properly the meminductor also in its limit states, it should be regarded as a current-or flux-controlled meminductive system (CCMLS or FCMLS), respectively.…”

“…then we talk about a current-controlled [12,16] or a charge-controlled meminductor. In terms of meminductor flux and current, CR (3) can be rewritten in the form…”

“…Similarly, if CR (1) can depict the charge q as a singlevalued functionq of the TIF, q ¼qðqÞ; ð6Þ then (6) defines a flux-controlled [12,16] or TIF-controlled meminductor. CR (6) can be transformed into the form…”

“…The first step was performed in [16], where a general methodology for PSPICE modeling of mem-devices was introduced. The very first PSPICE model of the memcapacitor was published in [17].…”

Second order mem‐circuits

“…In this regard, higher order devices are those which do not admit a description in terms of the fundamental circuit variables q, p, i, v [14]. Devices such as charge-controlled memcapacitors and flux-controlled meminductors [5], or the a-p devices proposed in [3], involve new variables, namely the integral variables a = fq = ffi or p = f<p = ffv, which are located beyond the classical limits of circuit theory (throughout the document we use the notation y = J x and z = JJx as abbreviations for y(t) = J_ Qo x(s)ds, z{t) = J_ QO (Jl QO x(r)dr)ds). The first purpose of the present paper is to extend the results discussed in [14] to accommodate these and other related devices in a systematic framework.…”