Spice Modeling of Silicon Nanowire Field-Effect Transistors for High-Speed Analog Integrated Circuits

Hamedi-Hagh, Sotoudeh; Bindal, Ahmet

doi:10.1109/tnano.2008.2004409

Cited by 19 publications

(7 citation statements)

References 29 publications

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“…Silicon and Germanium nanowires are grown by using the VLS technique that possesses high surface quality. Nanowire transistors provide full gate control over the channel and achieve ultralow OFF currents with minimum short channel effects [13]. For nanowires with dimensions that are less than ten layers of Silicon atoms, the electron motion becomes restricted due to the quantum confinement and so, the bandgap increases.…”

Section: Characteristics Of Silicon Nanowire Transistorsmentioning

confidence: 99%

Applications of Nanowire Transistors for Driving Nanowire LEDs

Hamedi-Hagh¹,

Park²

2012

Transactions on Electrical and Electronic Materials

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Operation of liquid crystal displays (LCDs) can be improved by monolithic integration of the pixel transistors with light emitting diodes (LEDs) on a single substrate. Conventional LCDs make use of filters to control the backlighting which reduces the overall efficiency. These LCDs also utilize LEDs in series which impose failure and they require high voltage for operation with a power factor correction. The screen of small hand-held devices can operate from moderate brightness. Therefore, III-V nanowires that are grown along with transistors over Silicon substrates can be utilized. Control of nanowire LEDs with nanowire transistors will significantly lower the cost, increase the efficiency, improve the manufacturing yield and simplify the structure of the small displays that are used in portable devices. The steps to grow nanowires on Silicon substrates are described. The vertical n-type and p-type nanowire transistors with surrounding gate structures are characterized. While biased at 0.5 V, nanowire transistors with minimum radius or channel width have an OFF current which is less than 1pA, an ON current more than 1 μA, a total delay less than 10 ps and a transconductance gain of more than 10 μA/V. The low power and fast switching characteristics of the nanowire transistor make them an ideal choice for the realization of future displays of portable devices with long battery lifetime.

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Section: Characteristics Of Silicon Nanowire Transistorsmentioning

confidence: 99%

Applications of Nanowire Transistors for Driving Nanowire LEDs

Hamedi-Hagh¹,

Park²

2012

Transactions on Electrical and Electronic Materials

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“…These parameters are optimized to ensure input and output I-V characteristics of 10 nm channel length and 2 nm radius SGFETs (Hamedi-Hagh & Bindal, 2008). The distributed parasitic RC components across the intrinsic SGFET transistor are modeled for n-and p-MOS transistors, as shown in Fig.…”

Section: Intrinsic Spice Modeling Of Nanowire Fetsmentioning

confidence: 99%

“…The f max is obtained when the magnitude of the maximum available power gain (G max ) of the transistor becomes unity and f T is obtained when the magnitude of the current gain (H 21 ) of the transistor becomes unity. The G max and H 21 of the transistor, under simultaneous conjugate impedance-matching conditions at input and output ports, are expressed in terms of S-parameters as (Hamedi-Hagh & Bindal, 2008) …”

Section: Extrinsic Spice Modeling Of Nanowire Fetsmentioning

confidence: 99%

Technology CAD of Nanowire FinFETs

Maiti¹,

Maiti²

2010

Nanowires

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“…Porous nanostructures are used in electronic devices, sensors, and solar cells (Jing and Zhan, 2008; Kumeria et al, 2014; Kamble et al, 2015; Van Nguyen and Bui, 2014). Also, the great thermal, electrical, chemical, and mechanical properties of nanostructures have led to use of them in nano-micro electromechanical systems (NEMS & MEMS), such as resonators (Hamidi et al, 2019; Alizadeh Hamidi et al, 2020), nano and micro switches (SoltanRezaee and Afrashi, 2016; Rahaeifard and Mojahedi, 2017), transistors (Hamedi-Hagh and Bindal, 2008) and energy harvesting (Chu et al, 2020; Ghayesh and Farokhi, 2020). In this regard, by using the piezoelectric patch pairs as sensor, Sun and Tong (2002) sensed the vibration of curved beams.…”

Section: Introductionmentioning

confidence: 99%

A new model for non-linear vibration of functionally graded porous nano-Beam based on non-local curvature and strain gradient tensors

Hosseini

Hamidi

Behrouzinia

2022

Journal of Vibration and Control

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In this paper, non-linear free vibration analysis of nano-beam has been studied. The non-local strain gradient theory and curvature tensor are used to show the size effect. The length scale parameter expresses the effect of strain gradient tensor in the non-local strain gradient theory. However, the aim of this article is to show the simultaneous effect of curvature and strain gradient tensors in non-linear vibration of functionally graded porous nano-beams. The effect of curvature tensor is demonstrated with the curvature tensor dependent parameter. Considering non-linear Von Kármán strains and Euler–Bernoulli beam theory, the governing vibrational equation of FG porous nano-beams are derived using Hamilton’s principle in the presence of strain gradient and curvature tensors simultaneously. The non-linear differential equation is extracted by using Galerkin’s method and the non-linear natural frequency of nano-beam is obtained according to Hamiltonian approach. Results represent the simultaneous effects of the length scale and curvature tensor dependent parameters on dimensionless non-linear natural frequencies. Also effects of different parameters such as non-local parameter, length scale parameter, porosity volume index, and power-law index are discussed in the presence and absence of the curvature tensor dependent parameter. Also, the beginning points of stiffness-hardening and stiffness-softening of nano-beam are always constant values in the non-local strain gradient theory, whereas considering the curvature tensor changes the beginning points of stiffness-hardening and stiffness-softening. The results are also compared with previous researches for validation.

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Spice Modeling of Silicon Nanowire Field-Effect Transistors for High-Speed Analog Integrated Circuits

Cited by 19 publications

References 29 publications

Applications of Nanowire Transistors for Driving Nanowire LEDs

Applications of Nanowire Transistors for Driving Nanowire LEDs

Technology CAD of Nanowire FinFETs

A new model for non-linear vibration of functionally graded porous nano-Beam based on non-local curvature and strain gradient tensors

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