SPICE Modeling of Single-Grain Si TFTs using BSIMSOI

Abstract

Single Grain Thin-film transistors (SG-TFTs) fabricated inside a location-controlled grain by µ-Czochralski process have as high as SOI performance. To model them, BSIMSOI with a proper modification of the mobility is proposed. The model has been verified for n-and p-channel DC and low frequency AC conditions by comparison with measurement results. Furthermore, preliminary circuit simulations are executed.