Spin accumulation and resistance due to a domain wall

Šimánek, E.

doi:10.1103/physrevb.63.224412

Cited by 53 publications

(70 citation statements)

References 13 publications

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“…This was based on models of the CPP mode of GMR, where spins will accumulate over that distance as they enter an oppositely polarised ferromagnetic layer [76], leading to bulk spin dependent scattering over that lengthscale. However, it was argued by Simánek that most of the spin-accumulation is suppressed by the spin tracking the rotating magnetisation rather well, as the system is not far from being adiabatic [199] -the mistracking of spins in Co with a Larmor wavelength of only a fewÅ is unlikely to be very great when the wall thickness is 150Å. Ni wires were compared with Co by same group, the effect in Ni was found to be one order of magnitude smaller [300].…”

Section: Mesoscopic Devicesmentioning

confidence: 98%

“…Dzero et al also looked at the role of spin accumulation in generating domain wall resistance (in the limit of a ballistic wall) and found even-odd effects in the number of walls in a nanowire, so long as all the walls are within a spin diffusion length of their neighbours [198]. This type of spin accumulation was put forward as a possible explanation for the very large MR observed by Ebels et al in a Co nanowire [90], although the calculation ofSimánek showed that a large part of the spinaccumulation is suppressed by the spin tracking the rotating magnetisation [199]. (Dzero et al also examined the depolarising effects of a wall-either Bloch or Néel-of finite thickness and found that the results of Ebels et al could not be explained by their theory: as a result they proposed a new type of wall geometry, which they dubbed the linear wall, details of which remain unpublished.)…”

Section: Theorymentioning

confidence: 99%

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Spin-polarised currents and magnetic domain walls

Marrows

2005

Advances in Physics

218

163

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Electrical currents flowing in ferromagnetic materials are spinpolarised as a result of the spin-dependent band structure. When the spatial direction of the polarisation changes, in a domain structure, the electrons must somehow accommodate the necessary change in direction of their spin angular momentum as they pass through the wall. Reflection, scattering, and a transfer of angular momentum to the lattice are all possible outcomes, depending on the circumstances. This gives rise to a variety of different physical effects, most importantly a contribution to the electrical resistance caused by the wall, and a motion of the wall driven by the spin-polarised current.Historical and recent research on these topics is reviewed. * Phone: +44(0)113 3433780

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Section: Mesoscopic Devicesmentioning

confidence: 98%

Section: Theorymentioning

confidence: 99%

Spin-polarised currents and magnetic domain walls

Marrows

2005

Advances in Physics

218

163

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“…In contrast, other conflicting theories of DWR predict negative resistance [16] or a contribution that can have either sign [17]. Unusually high DWR values were found in epitaxial Co wires at 77 K [18], which was attributed to the spin flip length being much larger than the width of the DW leading to spin accumulation at the DW, although it was later argued that this is not sufficient to explain their results [19]. Despite this considerable progress during the past years, the width of the DW, which is obviously a crucial parameter in fundamentally unraveling the origin of DWR, could never be changed systematically in experiments on DW resistivity.…”

mentioning

confidence: 91%

Tunable Resistivity of Individual Magnetic Domain Walls

et al. 2012

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Despite the relevance of current-induced magnetic domain wall (DW) motion for new spintronics applications, the exact details of the current-domain wall interaction are not yet understood. A property intimately related to this interaction is the intrinsic DW resistivity. Here, we investigate experimentally how the resistivity inside a DW depends on the wall width ∆, which is tuned using focused ion beam irradiation of Pt/Co/Pt strips. We observe the nucleation of individual DWs with Kerr microscopy, and measure resistance changes in real-time. A 1/∆ 2 dependence of DW resistivity is found, compatible with Levy-Zhang theory. Also quantitative agreement with theory is found by taking full account of the current flowing through each individual layer inside the multilayer stack.

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“…͑9͒, as given in the last column of Table I. In the case of the mechanisms listed in the first line of Table I, the wall-resistance theory appears to be that of Simanek,12 with…”

Section: Wall Resistancementioning

confidence: 99%

Relation between damping, current-induced torques, and wall resistance for domain walls in magnetic nanowires

Berger

2007

Phys. Rev. B

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We show that each mechanism of the Gilbert damping of wall motion corresponds to a current-induced drive torque on the domain wall, based on the same electron processes. For example, the damping theory of Heinrich, Fraitova, and Kambersky is directly related to the theory of ͑nonadiabatic͒ drive torques by Zhang and Li. Using momentum conservation, this relation is extended to the wall resistance. This leads to a classification of most existing electron theories of damping and drive torques, and of wall resistance, into only three different kinds. In all cases, the drive torque is derived from the damping torque by replacing the wall speed by an electron drift speed ӍR 0 j, where R 0 is the ordinary Hall constant and j the current density. This drift speed differs from the one which appears in existing theories of adiabatic spin-transfer torques on a wall. Using the present ideas, mechanisms for drive torques and wall resistance have been invented.

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Spin accumulation and resistance due to a domain wall

Cited by 53 publications

References 13 publications

Spin-polarised currents and magnetic domain walls

Spin-polarised currents and magnetic domain walls

Tunable Resistivity of Individual Magnetic Domain Walls

Relation between damping, current-induced torques, and wall resistance for domain walls in magnetic nanowires

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