Spin-battery and spin-current transport through a quantum dot

Wang, Da-Kun; Sun, Qing-Feng; Guo, Hong

doi:10.1103/physrevb.69.205312

Cited by 76 publications

(36 citation statements)

References 25 publications

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“…6 A SC circulating in a twoterminal device is usually driven by a spin bias. [8][9][10][11][12][13] The spin bias indicates a spin-dependent chemical potential ͑see Fig. 1͒, which can be created, for example, by the injection of CC from a ferromagnetic source into one of the two terminals.…”

Section: Rectification Of Spin-bias-induced Charge Currentsmentioning

confidence: 99%

Rectification of spin-bias-induced charge currents

Zhai

Zhao

2009

Applied Physics Letters

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Section: Rectification Of Spin-bias-induced Charge Currentsmentioning

confidence: 99%

Rectification of spin-bias-induced charge currents

Zhai

Zhao

2009

Applied Physics Letters

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“…Solving the commutation term in (5), applying Dyson equations, and solving the lesser Green function for self energy [17], [25], [26], one can get the spin current expressed as (6) where is the Fermi-Dirac distribution function for electrons on the left/right lead.…”

Section: B Current Transport In the Quantum Dotmentioning

confidence: 99%

“…The retarded Green function denotes the local density of states for spin and can be derived from the equation of motion technique [26], [27]: (7) where is the retarded self-energy. is the intradot electron occupation number at spin state , it needs to be solved self-consistently with [28]: (8) By setting the value for the coupling strength , and using the chemical potentials calculated from the SDD model, the current in the QD can be obtained.…”

Section: B Current Transport In the Quantum Dotmentioning

confidence: 99%

“…Next we compare the total current we obtained with the initial value, and replace the original current value with Table I shows the parameters for the numerical calculation [12], [13]. The parameter values used here are based on normal FM materials such as NiFe or CoFe as well as typical QD [9], [26]. In the absence of spin-flip mechanism in the QD and at the QD-FM interface, spin current is conserved on the dot and at the interface.…”

Section: Self-consistent Treatment Of the Currentmentioning

confidence: 99%

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Spin Current Characteristics in a Quantum Dot-Ferromagnetic Contacts Sandwich Structure

2008

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We present an accurate theoretical treatment of spin current transport in a ferromagnetic-quantum dot-ferromagnetic (FM-QD-FM) system. The current flowing through the system is spin-polarized due to the spin asymmetric density of states (DOS) in the FM region. In the FM contacts, the spin current is modeled by the conventional macroscopic analysis-spin-drift-diffusion (SDD) model based on the Boltzmann equations. However, in the QD region, the current needs to be treated under mesoscopic regime to account for the electron correlation and the dot-leads coupling. We use the Keldysh non-equilibrium Green function (NEGF) approach based on equation of motion technique to model the current transport in the dot region and integrate the macroscopic treatment in the FM leads and microscopic treatment in the QD in a self-consistent manner. The multi-scale approach we introduced here presents a realistic and simplified way for calculating spin current in such a FM-QD-FM system.Index Terms-Current transport, quantum dot, spin.

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“…We propose a spin-bias FET where the spin current is modulated by the RSOC effect, and the transistor operation is induced by the presence of spin biases [13][14][15][16] in the electrodes, as shown in Fig. 1.…”

Section: Introductionmentioning

confidence: 99%

Spin-bias driven field effect transistor

Jalil

Siu

2012

Journal of Applied Physics

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Articles you may be interested inA Datta-Das transistor and conductance switch based on a zigzag graphene nanoribbon J. Appl. Phys. 113, 054304 (2013); 10.1063/1.4790318 Spin-bias modulated Kondo effect in an interacting quantum dotWe propose a spin field effect transistor driven by spin biases which are externally generated in the source and drain electrodes. We employed the Keldysh non-equilibrium Green's function formalism to evaluate the charge and spin currents through the transistor, and verify the operation of the transistor as predicted by a semiclassical model. Our calculations show that in the "off" state, both the charge and spin currents are suppressed. In the "on" state, the device allows only the spin current to pass through but not charge current, thus potentially improving the energy efficiency of the device. V C 2012 American Institute of Physics. [http://dx.

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Spin-battery and spin-current transport through a quantum dot

Cited by 76 publications

References 25 publications

Rectification of spin-bias-induced charge currents

Rectification of spin-bias-induced charge currents

Spin Current Characteristics in a Quantum Dot-Ferromagnetic Contacts Sandwich Structure

Spin-bias driven field effect transistor

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