Spin-dependent electronic tunneling at zero magnetic field

Voskoboynikov, A.; Liu, Shiue Shin; Lee, C. P.

doi:10.1103/physrevb.58.15397

Cited by 96 publications

(67 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Asymmetric nonmagnetic semiconductor barriers are also used in the construction of spin filters [3]. This effect is caused by the interface-induced Rashba spin-orbit coupling [4] and can be quite significant for resonant tunneling through asymmetric double-barrier structure [5].…”

Section: (2004))mentioning

confidence: 99%

“…The injection of spin-polarized electrons from ferromagnetic metals into semiconductors has low efficiency, less than 1%, because of a large resistivity mismatch between ferromagnetic and semiconductor materials [1]. Rashba proposed that this problem could be solved by inserting a tunneling barrier at the metal-semiconductor interface [2].Asymmetric nonmagnetic semiconductor barriers are also used in the construction of spin filters [3]. This effect is caused by the interface-induced Rashba spin-orbit coupling [4] and can be quite significant for resonant tunneling through asymmetric double-barrier structure [5].…”

mentioning

confidence: 99%

See 1 more Smart Citation

Spin-dependent tunneling through a symmetric semiconductor barrier: The Dresselhaus effect

et al. 2005

View full text Add to dashboard Cite

Spin-dependent tunneling through a symmetric semiconductor barrier is studied including the k 3 Dresselhaus effect. The spin-dependent transmission of electron can be obtained analytically.By comparing with previous work(Phys. Rev. B 67. R201304 (2003) and Phys. Rev. Lett. 93. (2004)), it is shown that the spin polarization and interface current are changed significantly by including the off-diagonal elements in the current operator, and can be enhanced considerably by the Dresselhaus effect in the contact regions.PACS numbers: 72.25. Dc, 72.25.Mk, 73.40.Gk * Correspondence should be sent to: kchang@red.semi.ac.cn 1 Recently electron spin in semiconductors has attracted a rapidly growing interest due to its potential application in spintronics devices. To successfully incorporate spin into existing semiconductor technology, one has to overcome technical difficulties such as efficient spin-polarized injection, transport, control and manipulation, as well as measurement of spin polarization. The injection of spin-polarized electrons from ferromagnetic metals into semiconductors has low efficiency, less than 1%, because of a large resistivity mismatch between ferromagnetic and semiconductor materials [1]. Rashba proposed that this problem could be solved by inserting a tunneling barrier at the metal-semiconductor interface [2].Asymmetric nonmagnetic semiconductor barriers are also used in the construction of spin filters [3]. This effect is caused by the interface-induced Rashba spin-orbit coupling [4] and can be quite significant for resonant tunneling through asymmetric double-barrier structure [5].Very recently, a multichannel field-effect spin-barrier selector was investigated theoretically utilizing the Rashba and Dresselhaus effects [6]. A considerable spin polarization and an interesting "tunneling spin-galvanic" effect were found in the tunneling of electron through a single symmetric barrier utilizing the Dresselhaus effect in the barrier [7,8]. However, the off-diagonal elements in the current operator, the contribution from the Dresselhaus effect, are neglected in these works. These off-diagonal element in the currents operator could lead to the significant correction of the spin-dependent transmission, especially in a thin barrier case.In this paper, we investigate theoretically the spin-dependent tunneling through a single symmetric barrier. The barrier and contacts consist of a zinc-blende-structure semiconductor lacking the inversion symmetry. It is shown that the spin-dependent tunneling and the electric current in the plane of the interfaces are different from the previous studies [7]. This difference is significant in thin barrier case and disappears gradually with increasing the thickness of the barrier. It is interesting to notice that the spin polarization and the interface current j are enhanced by including the Dresselhaus effect in the contact regions.We consider the transmission of an electron with initial wave vector k = (k , k z ) through a flat potential barrier of height V grown...

show abstract

Section: (2004))mentioning

confidence: 99%

mentioning

confidence: 99%

Spin-dependent tunneling through a symmetric semiconductor barrier: The Dresselhaus effect

et al. 2005

View full text Add to dashboard Cite

show abstract

“…On the other hand, a spin transistor can also be achieved by using only nonmagnetic materials that exploit the unique characteristics of bulk inversion asymmetry in (110)-oriented semiconductor heterostructures, as reported by Hall et al [6][7]. Furthermore, Voskoboynikov et al have proposed that a non-magnetic semiconductor material can be produced by Rashba spin-orbit coupling due to the Dresselhaus effect occurring in zinc-blende [8][9][10].…”

Section: Introductionmentioning

confidence: 94%

Transmittance and Tunneling Current through a Trapezoidal Barrier under Spin Polarization Consideration

Noor

Nabila

Mardianti

et al. 2018

J. Phys.: Conf. Ser.

View full text Add to dashboard Cite

Abstract.The transmittance and tunneling current in heterostructures under spin polarization consideration were studied by employing a zinc-blended structure for the heterostructures. An electron tunnels through a potential barrier by applying a bias voltage to the barrier, which is called the trapezoidal potential barrier. In order to study the transmittance, an Airy wave function approach was employed to find the transmittance. The obtained transmittance was then utilized to compute the tunneling current by using a Gauss quadrature method. It was shown that the transmittances were asymmetric with the incident angle of the electron. It was also shown that the tunneling currents increased as the bias voltage increased.

show abstract

“…Here, we mention again that the effective mass is independent of layer. When taking both the transverse motion and the layer-dependent effective mass of the electron into account, the transmission coefficient can have a pronounced dispersion in k space [18]. In this case, one cannot simply reduce the 3D Schrödinger equation to the 1D equation and integrate the k to obtain the current density, as we did here.…”

Section: Introductionmentioning

confidence: 99%

The effects of Mn concentration on spin-polarized transport through ZnSe/ZnMnSe/ZnSe heterostructures

Saffarzadeh¹

2006

Solid State Communications

View full text Add to dashboard Cite

We have studied the effects of Mn concentration on the ballistic spin-polarized transport through diluted magnetic semiconductor heterostructures with a single paramagnetic layer. Using a fitted function for zero-field conduction band offset based on the experimental data, we found that the spin current densities strongly depend on the Mn concentration. The magnitude as well as the sign of the electron-spin polarization and the tunnel magnetoresistance can be tuned by varying the Mn concentration, the width of the paramagnetic layer, and the external magnetic field. By an appropriate choice of the Mn concentration and the width of the paramagnetic layer, the degree of spin polarization for the output current can reach 100% and the device can be used as a spin filter.

show abstract

Spin-dependent electronic tunneling at zero magnetic field

Cited by 96 publications

References 17 publications

Spin-dependent tunneling through a symmetric semiconductor barrier: The Dresselhaus effect

Spin-dependent tunneling through a symmetric semiconductor barrier: The Dresselhaus effect

Transmittance and Tunneling Current through a Trapezoidal Barrier under Spin Polarization Consideration

The effects of Mn concentration on spin-polarized transport through ZnSe/ZnMnSe/ZnSe heterostructures

Contact Info

Product

Resources

About