Spin‐dependent transport in elemental and compound semiconductors and nanostructures

Brandt, M. S.; Goennenwein, Sebastian T. B.; Graf, T.; Huebl, Hans; Lauterbach, Stefan; Stutzmann, M.

doi:10.1002/pssc.200404763

Cited by 22 publications

(16 citation statements)

References 85 publications

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“…In the following, we assume spin-dependent recombination of oppositely charged, localized spin carriers. However, we do not want to rule out other spin dependent mechanisms [5] at this moment.…”

Section: Introductionmentioning

confidence: 94%

Electrical detection of coherent spin pair oscillations in ZnPc devices

Schaefer

Saremi

Fostiropoulos

et al. 2008

Physica Status Solidi (b)

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We investigated the organic device ITO/ZnPc/Al with continuous wave and pulsed electrically detected magnetic resonance (cw‐EDMR/p‐EDMR). Resonant microwave absorption of the sample leads to current changes that can be explained by the theory of spin dependent recombination of localized spin carriers. The coherent spin motion during the microwave pulse shows two frequency components, which can be attributed to spin pairs with large and small Larmor separation. This is supported by the analysis of the cw‐EDMR spectrum, when taking into account exchange coupling between the spin pair partners. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Introductionmentioning

confidence: 94%

Electrical detection of coherent spin pair oscillations in ZnPc devices

Schaefer

Saremi

Fostiropoulos

et al. 2008

Physica Status Solidi (b)

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“…In semiconductors, the effect of paramagnetic resonance on transport processes is well known. [7][8][9] Here, we report on nonresonant and resonant changes of the magnetoresistance of thin ferromagnetic CrO 2 and Fe 3 O 4 films upon microwave irradiation. We show that these electrically detected ferromagnetic resonance ͑ED-FMR͒ signals are spectroscopically equivalent to conventional FMR measured simultaneously, and that the sign and the magnitude of the EDFMR signals can be quantitatively understood in terms of a Joule heating effect.…”

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confidence: 94%

Electrically detected ferromagnetic resonance

Goennenwein

Schink

Brandlmaier

et al. 2007

Applied Physics Letters

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We study the magnetoresistance properties of thin ferromagnetic CrO 2 and Fe 3 O 4 films under microwave irradiation. Both the sheet resistance and the Hall voltage V Hall characteristically change when a ferromagnetic resonance ͑FMR͒ occurs in the film. The electrically detected ferromagnetic resonance ͑EDFMR͒ signals closely match the conventional FMR, measured simultaneously, in both resonance fields and line shapes. The sign and the magnitude of the resonant changes ⌬ / and ⌬V Hall / V Hall can be consistently described in terms of a Joule heating effect. Bolometric EDFMR thus is a powerful tool for the investigation of magnetic anisotropy and magnetoresistive phenomena in ferromagnetic micro-or nanostructures. © 2007 American Institute of Physics. ͓DOI: 10.1063/1.2722027͔The occurrence of ferromagnetic resonance ͑FMR͒ affects the quasistatic properties of a magnetic material, such as its magnetoresistance, 1-4 magnetoimpedance, 5 or caloric properties. 6 These effects can be used to detect FMR in magnetic micro-and nanostructures. 4,6 This is attractive, as FMR is one of the most sensitive methods for the investigation of magnetic anisotropy. However, to exploit the potential of such novel FMR detection methods, their full equivalence with the well established conventional cavity-based FMR must first be demonstrated. In semiconductors, the effect of paramagnetic resonance on transport processes is well known. 7-9 Here, we report on nonresonant and resonant changes of the magnetoresistance of thin ferromagnetic CrO 2 and Fe 3 O 4 films upon microwave irradiation. We show that these electrically detected ferromagnetic resonance ͑ED-FMR͒ signals are spectroscopically equivalent to conventional FMR measured simultaneously, and that the sign and the magnitude of the EDFMR signals can be quantitatively understood in terms of a Joule heating effect. This opens the way to selectively investigate particular transport processes in ferromagnets via magnetic resonance techniques.The single-crystalline, 100 nm thick CrO 2 films studied were deposited on ͑100͒-oriented TiO 2 substrates by chemical vapor deposition. 10 After patterning them into 80 m wide and 600 m long Hall bar structures using optical lithography and wet chemical etching, we fabricated Ohmic contacts by depositing Au in situ immediately after sputter cleaning the film surface in an Ar plasma. 11 The magnetite ͑Fe 3 O 4 ͒ samples were grown on ͑100͒-oriented MgO substrates by pulsed laser deposition. 12 Here, we study a 32 nm thick, coherently strained Fe 3 O 4 film with Ohmic contacts in van der Pauw geometry, realized by wedge bonding Al wires.The FMR spectra were measured in an X-band ͑9 GHz͒ electron spin resonance setup at room temperature as a function of a static magnetic field H, using magnetic field modulation at 100 kHz with an amplitude 0 ⌬H = 3.2 mT. Simultaneously to the FMR, we recorded the longitudinal magnetoresistance or the Hall effect in the samples in fourpoint geometry, with ac current bias I at a frequency I ഛ 1.1 kHz. The magnetiza...

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“…10,11,12 Electrically detected magnetic resonance (EDMR), where a resonant change of the dc conductivity is monitored 12 , was first demonstrated on Si:P by Schmidt and Solomon. 13 Subsequent studies of P in crystalline Si using EDMR were performed both at very high 14 and very low magnetic fields, 15 as well as for P in amorphous 16 and microcrystalline 17 silicon.…”

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confidence: 99%

Electrically detected magnetic resonance in ion-implanted Si:P nanostructures

McCamey

Huebl

Brandt

et al. 2006

Applied Physics Letters

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We present the results of electrically-detected magnetic resonance (EDMR) experiments on ion-implanted Si:P nanostructures at 5 K, consisting of high-dose implanted metallic leads with a square gap, in which Phosphorus is implanted at a non-metallic dose corresponding to 10 17 cm −3 . By restricting this secondary implant to a 100 nm × 100 nm region, the EDMR signal from less than 100 donors is detected. This technique provides a pathway to the study of single donor spins in semiconductors, which is relevant to a number of proposals for quantum information processing. The ability to spectroscopically study the spin properties and interactions of a small number of donors in semiconductors has many applications such as the storage of classical information in nuclear or electronic spins, 1 and is relevant to a number of proposals 2,3 related to quantum information processing (QIP). In particular, the construction of QIP hardware utilizing Si:P has been discussed by Kane 4 and Hollenberg. 5 In this context, the ultimate task is the detection of the electron or nuclear spin state of single P donors.

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Spin‐dependent transport in elemental and compound semiconductors and nanostructures

Cited by 22 publications

References 85 publications

Electrical detection of coherent spin pair oscillations in ZnPc devices

Electrical detection of coherent spin pair oscillations in ZnPc devices

Electrically detected ferromagnetic resonance

Electrically detected magnetic resonance in ion-implanted Si:P nanostructures

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