“…Upon application of a voltage bias, carriers move across the inhomogeneous interface by hopping through the nano-islands, providing conducting bridges between the metal electrode and the manganite bulk. Notice that, in the present study, spin-dependent tunneling processes in the ferromagnetic manganite, as well as charging effects in nanometer-scale islands, are not taken into account because, first, their effect is limited by low voltages and does not drastically influence the overall behavior of an I − V characteristic in a broad range of voltages and, second, the spin-flip mechanisms are strongly suppressed in magnetic nanoparticles [19]. In order to explain the analytical behavior of currentvoltage characteristics in low-and high-resistance states, I turn now to model calculations of the conductance across chains of random, localized states, separated by distances of the order of a few nanometers.…”