2007
DOI: 10.1016/j.physrep.2007.07.001
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Spin-dependent tunneling and Coulomb blockade in ferromagnetic nanoparticles

Abstract: In this paper we review studies on spin-dependent transport in systems containing ferromagnetic nanoparticles. In a tunnel junction with a nanometer-scaleisland, the charging effect leads to an electric current blockade phenomenon in which a single electron charge plays a significant role in electron transport, resulting in single-electron tunneling (SET) properties such as Coulomb blockade and Coulomb staircase. In a tunnel junction with a ferromagnetic nano-island and electrode, it was expected that the inte… Show more

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Cited by 59 publications
(55 citation statements)
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“…[1][2][3][4][5][6][7][8][9][10][11] The exchange-bias phenomenon, i.e., the hysteresis loop shifts in the applied field, was first discovered by Meiklejohn and Bean in oxide-coated Co particles. 12 Recently, the research on the exchange bias has been attractive, because of its fundamentally important role in spin valve and tunneling devices.…”
Section: Introductionmentioning
confidence: 99%
“…[1][2][3][4][5][6][7][8][9][10][11] The exchange-bias phenomenon, i.e., the hysteresis loop shifts in the applied field, was first discovered by Meiklejohn and Bean in oxide-coated Co particles. 12 Recently, the research on the exchange bias has been attractive, because of its fundamentally important role in spin valve and tunneling devices.…”
Section: Introductionmentioning
confidence: 99%
“…The interplay between Coulomb blockade and spin dependent tunnelling or a magnetic field leads to various effects, which have been recently reviewed by Yakushiji et al [34] and…”
Section: Introductionmentioning
confidence: 99%
“…Upon application of a voltage bias, carriers move across the inhomogeneous interface by hopping through the nano-islands, providing conducting bridges between the metal electrode and the manganite bulk. Notice that, in the present study, spin-dependent tunneling processes in the ferromagnetic manganite, as well as charging effects in nanometer-scale islands, are not taken into account because, first, their effect is limited by low voltages and does not drastically influence the overall behavior of an I − V characteristic in a broad range of voltages and, second, the spin-flip mechanisms are strongly suppressed in magnetic nanoparticles [19]. In order to explain the analytical behavior of currentvoltage characteristics in low-and high-resistance states, I turn now to model calculations of the conductance across chains of random, localized states, separated by distances of the order of a few nanometers.…”
Section: Resultsmentioning
confidence: 99%