Co2FeSi film is potential in the spintronics applications, due to its low damping factor, which is reflected in the ferromagnetic resonance behavior. In this work, we demonstrate that the ferromagnetic resonance behavior in Co2FeSi film can be well engineered by post-annealing. After 450 °C post-annealing for 1 hour, the Gilbert damping factor decreases drastically from 0.039 at as-deposited state to 0.006, and the inhomogeneity contribution of ferromagnetic resonance linewidth decreases to 60.5 Oe. These decreases are ascribed to the crystallization of film from amorphous state to an ordered B2 phase. Higher annealing temperature, however, leads to the formation of the A2 phase with higher atomic disorder, instead of B2 phase, and brings about the increase of Gilbert damping.