Spin Dynamics of a Solid-State Qubit in Proximity to a Superconductor

Monge, Richard; Delord, Tom; Proscia, Nicholas V.; Shotan, Zav; Jayakumar, Harishankar; Henshaw, Jacob; Zangara, Pablo R.; Lozovoi, Artur; Pagliero, Daniela; Esquinazi, P.; An, Toshu; Sodemann, Inti; Menon, Vinod M.; Meriles, Carlos A.

doi:10.1021/acs.nanolett.2c03250

Cited by 9 publications

(4 citation statements)

References 55 publications

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“…Similar effects have been observed and attributed to other causes. Improvement in T 2 was observed for single NVs near a superconductor [23]. In this case the improvement is attributed to image charges generated on and near the diamond surface, passivating dangling bonds on the diamond surface.…”

Section: Dephasing and Decoherencementioning

confidence: 92%

Mitigation of nitrogen vacancy photoluminescence quenching from material integration for quantum sensing

Henshaw

Kehayias

Basso

et al. 2023

Mater. Quantum. Technol.

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The nitrogen-vacancy (NV) color center in diamond has demonstratedgreat promise in a wide range of quantum sensing. Recently, there have been a series ofproposals and experiments using NV centers to detect spin noise of quantum materialsnear the diamond surface. This is a rich complex area of study with novel nanomagnetismand electronic behavior, that the NV center would be ideal for sensing.However, due to the electronic properties of the NV itself and its host material,getting high quality NV centers within nanometers of such systems is challenging.Band bending caused by space charges formed at the metal-semiconductor interfaceforce the NV center into its insensitive charge states. Here, we investigate optimizingthis interface by depositing thin metal films and thin insulating layers on a seriesof NV ensembles at different depths to characterize the impact of metal films ondifferent ensemble depths. We find an improvement of coherence and dephasing timeswe attribute to ionization of other paramagnetic defects. The insulating layer ofalumina between the metal and diamond provide improved photoluminescence andhigher sensitivity in all modes of sensing as compared to direct contact with the metal,providing as much as a factor of 2 increase in sensitivity, decrease of integration timeby a factor of 4, for NV T1 relaxometry measurements.

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Section: Dephasing and Decoherencementioning

confidence: 92%

Mitigation of nitrogen vacancy photoluminescence quenching from material integration for quantum sensing

Henshaw

Kehayias

Basso

et al. 2023

Mater. Quantum. Technol.

Self Cite

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“…In a recent work, a noticeable enhancement in the transverse coherence time of a NV center has been observed in the presence of a superconductor. 58 The effect is tentatively rationalized as a change in the electric noise due to the superconductor (diamagnetic)-induced redistribution of charge carriers near the NV center. α-RuCl 3 is a small band gap semiconductor with room temperature resistivity of the order of 10 –1 Ω cm.…”

Section: Charge Redistributionmentioning

confidence: 99%

Room Temperature Relaxometry of Single Nitrogen Vacancy Centers in Proximity to α-RuCl₃ Nanoflakes

Kumar,

Yudilevich,

Smooha

et al. 2024

Nano Lett.

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Nitrogen vacancy (NV) center-based magnetometry has been proven to be a versatile sensor for various classes of magnetic materials in broad temperature and frequency ranges. Here, we use the longitudinal relaxation time T 1 of single NV centers to investigate the spin dynamics of nanometer-thin flakes of α-RuCl 3 at room temperature. We observe a significant reduction in the T 1 in the presence of α-RuCl 3 in the proximity of NVs, which we attribute to paramagnetic spin noise confined in the 2D hexagonal planes. Furthermore, the T 1 time exhibits a monotonic increase with an applied magnetic field. We associate this trend with the alteration of the spin and charge noise in α-RuCl 3 under an external magnetic field. These findings suggest that the influence of the spin dynamics of α-RuCl 3 on the T 1 of the NV center can be used to gain information about the material itself and the technique to be used on other 2D materials.

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“…These two decoherence channels are characterized by the T 1 and T 2 times, respectively. In recent years, some promising pulsed sensing protocols have been demonstrated in either ambient or pressurized conditions [19,23,[46][47][48][49]. Nonetheless, little attention has been paid to the hydrostaticity of the pressure medium and the characterization of NV decoherence times using a hydrostatic medium.…”

Section: Pulsed Measurements With a Hydrostatic Pressure Mediummentioning

confidence: 99%

Spectroscopy Study on NV Sensors in Diamond-based High-pressure Devices

Ho¹,

Leung²,

Wang³

et al. 2023

Preprint

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High-pressure experiments are crucial in modern interdisciplinary research fields such as engineering quantum materials, yet local probing techniques remain restricted due to the tight confinement of the pressure chamber in certain pressure devices. Recently, the negatively charged nitrogen-vacancy (NV) center has emerged as a robust and versatile quantum sensor in pressurized environments. There are two popular ways to implement NV sensing in a diamond anvil cell (DAC), which is a conventional workhorse in the high-pressure community: create implanted NV centers (INVs) at the diamond anvil tip or immerse NV-enriched nano-diamonds (NDs) in the pressure medium. Nonetheless, there are limited studies on comparing the local stress environments experienced by these sensor types as well as their performances as pressure gauges. In this work, by probing the NV energy levels with the optically detected magnetic resonance (ODMR) method, we experimentally reveal a dramatic difference in the partially reconstructed stress tensors of INVs and NDs incorporated in the same DAC. Our measurement results agree with computational simulations, concluding that INVs perceive a more non-hydrostatic environment dominated by a uniaxial stress along the DAC axis. This provides insights on the suitable choice of NV sensors for specific purposes and the stress distribution in a DAC. We further propose some possible methods, such as using NDs and diamond nanopillars, to extend the maximum working pressure of quantum sensing based on ODMR spectroscopy, since the maximum working pressure could be restricted by non-hydrostaticity of the pressure environment. Moreover, we explore more sensing applications of the NV center by studying how pressure modifies different aspects of the NV system. We perform a photoluminescence (PL) study using both INVs and NDs to determine the pressure dependence of the zero-phonon line (ZPL), which helps developing an all-optical pressure sensing protocol with the NV center. We also characterize the spin-lattice relaxation (T1) time of INVs under pressure to lay a foundation for robust pulsed measurements with NV centers in pressurized environments.

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Spin Dynamics of a Solid-State Qubit in Proximity to a Superconductor

Cited by 9 publications

References 55 publications

Mitigation of nitrogen vacancy photoluminescence quenching from material integration for quantum sensing

Mitigation of nitrogen vacancy photoluminescence quenching from material integration for quantum sensing

Room Temperature Relaxometry of Single Nitrogen Vacancy Centers in Proximity to α-RuCl₃ Nanoflakes

Spectroscopy Study on NV Sensors in Diamond-based High-pressure Devices

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Spin Dynamics of a Solid-State Qubit in Proximity to a Superconductor

Cited by 9 publications

References 55 publications

Mitigation of nitrogen vacancy photoluminescence quenching from material integration for quantum sensing

Mitigation of nitrogen vacancy photoluminescence quenching from material integration for quantum sensing

Room Temperature Relaxometry of Single Nitrogen Vacancy Centers in Proximity to α-RuCl3 Nanoflakes

Spectroscopy Study on NV Sensors in Diamond-based High-pressure Devices

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Product

Resources

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Room Temperature Relaxometry of Single Nitrogen Vacancy Centers in Proximity to α-RuCl₃ Nanoflakes