Spin Injection and Detection in Silicon

Žutić, Igor; Fabian, Jaroslav; Erwin, Steven C.

doi:10.1103/physrevlett.97.026602

Cited by 141 publications

(75 citation statements)

References 34 publications

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“…This is not surprising considering the simple resistor model of a F/Gr junction, in the absence of a large spin-dependent interfacial contribution. Similar difficulties, including magnetically inactive ferromagnetic/silicon interfaces were attributed to early failures to achieve spin injection in Si [105]. However, there are experiments showing a more complicated behavior and an efficient spin injection in the regime where the arguments of the resistance mismatch between the F and N regions would suggest negligible spin injection [56,106].…”

Section: Spin Polarizations: Modeling Spin Injection and Proximitmentioning

confidence: 99%

Graphene spintronics: Spin injection and proximity effects from first principles

et al. 2014

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Ferromagnet/graphene (F/Gr) junctions are important building blocks for graphene spintronics. While simple models of spin injection are very successful for macroscopic metallic junctions, they reveal many deficiencies in describing F/Gr junctions. First-principles methods are key to assess such Gr-based junctions, but the computational cost is often too high. We focus on Ni(111)/Gr junctions and include van der Waals interactions from first principles, crucial for their correct description. We formulate a computationally inexpensive model to examine the nonuniformity and bias dependence of spin injection and elucidate proximity effects using spin polarization maps. Our results could extend the applicability of simple spin injection models in F/Gr junctions.

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Section: Spin Polarizations: Modeling Spin Injection and Proximitmentioning

confidence: 99%

Graphene spintronics: Spin injection and proximity effects from first principles

et al. 2014

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“…Recently, methods for spin injection and/or detection in silicon (Si) were explored intensely [2,3,4,5,6,7] because Si has a long spin relaxation time and is compatible with the current industrial semiconductor technologies. Although electrical detections of spin transport in Si conduction channels were demonstrated by two research groups, [4,5] an insulating Al 2 O 3 tunnel barrier between FM and Si was utilized for efficient spin injection and/or detection.…”

Section: Pacs Numbersmentioning

confidence: 99%

Electrical injection and detection of spin-polarized electrons in silicon through an Fe3Si/Si Schottky tunnel barrier

Ando

Hamaya

Kasahara

et al. 2009

Applied Physics Letters

133

112

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We demonstrate electrical injection and detection of spin-polarized electrons in silicon (Si) using epitaxially grown Fe3Si/Si Schottky-tunnel-barrier contacts. By an insertion of a δ-doped n + -Si layer (∼ 10 19 cm −3 ) near the interface between a ferromagnetic Fe3Si contact and a Si channel (∼ 10 15 cm −3 ), we achieve a marked enhancement in the tunnel conductance for reverse-bias characteristics of the Fe3Si/Si Schottky diodes. Using laterally fabricated four-probe geometries with the modified Fe3Si/Si contacts, we detect nonlocal output signals which originate from the spin accumulation in a Si channel at low temperatures. PACS numbers:To solve critical issues caused by the scaling limit of complementary metal-oxide-semiconductor (CMOS) technologies, spin-based electronics (spintronics) has been studied.[1] For semiconductor spintronic applications, an electrical spin injection from a ferromagnet (FM) into a semiconductor (SC) and its detection are crucial techniques.Recently, methods for spin injection and/or detection in silicon (Si) were explored intensely [2,3,4,5,6,7] because Si has a long spin relaxation time and is compatible with the current industrial semiconductor technologies. Although electrical detections of spin transport in Si conduction channels were demonstrated by two research groups, [4,5] an insulating Al 2 O 3 tunnel barrier between FM and Si was utilized for efficient spin injection and/or detection. To realize gate-tunable spin devices, e.g., spin metal-oxidesemiconductor field effect transistors (spin MOSFET), [8] demonstrations of electrical spin injection and detection in Si conduction channels using Schottky tunnel-barrier contacts will become considerably important. [9,10] By low-temperature molecular beam epitaxy (LTMBE), we recently demonstrated highly epitaxial growth of a binary Heusler alloy Fe 3 Si on Si and obtained an atomically abrupt heterointerface. [11] In this letter, inserting a heavily doped n + -Si layer near the abrupt interface between Fe 3 Si and n-Si, we achieve an effective Shottky tunnel barrier for spin injection into Si. Using nonlocal signal measurements, we demonstrate electrical injection and detection of spin-polarized electrons in Si conduction channels though the Schottky-tunnel-barrier contacts.The n + -Si layer was formed on n-Si(111) (n ∼ 4.5 × 10 15 cm −3 ) by a combination of the Si solid-phase epitaxy with an Sb δ-doping process, [12] where the carrier * E-mail: hamaya@ed.kyushu-u.ac.jp † E-mail: miyao@ed.kyushu-u.ac.jp concentration of the n + -Si layer was ∼ 2.3 × 10 19 cm −3 , determined by Hall effect measurements, and ∼ 10-nmthick non-doped Si layer was grown on the Sb δ-doped layer. Ferromagnetic Fe 3 Si layers with a thickness of ∼ 50 nm were grown by LTMBE at 130 • C, as shown in our previous work.[11] The interface between Fe 3 Si and n + -Si was comparable to that shown in Ref. 11. To evaluate electrical properties of the Fe 3 Si/Si Schottky contacts, we firstly fabricated two different Schottky diodes (∼ 1 mm in diameter) with and w...

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“…[1][2][3][4] Hyperfine interactions are suppressed due to the natural abundance of zero-spin nuclear isotopes. As a result, localized electrons have exceedingly long coherence times at low temperatures.…”

Section: Introductionmentioning

confidence: 99%

Intrinsic spin lifetime of conduction electrons in germanium

2012

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We investigate the intrinsic spin relaxation of conduction electrons in germanium due to electronphonon scattering. We derive intravalley and intervalley spin-flip matrix elements for a general spin orientation and quantify the resulting anisotropy in spin relaxation. The form of the intravalley spinflip matrix element is derived from the eigenstates of a compact spin-dependent k·p Hamiltonian in the vicinity of the L point (where thermal electrons are populated in Ge). Spin lifetimes from analytical integrations of the intravalley and intervalley matrix elements show excellent agreement with independent results from elaborate numerical methods.

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Spin Injection and Detection in Silicon

Cited by 141 publications

References 34 publications

Graphene spintronics: Spin injection and proximity effects from first principles

Graphene spintronics: Spin injection and proximity effects from first principles

Electrical injection and detection of spin-polarized electrons in silicon through an Fe3Si/Si Schottky tunnel barrier

Intrinsic spin lifetime of conduction electrons in germanium

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