Spin Injection in Spin FETs Using a Step-Doping Profile

Abstract

Abstract-We investigate effect of a step-doping profile on the spin injection from a ferromagnetic metal contact into a semiconductor quantum well (QW) in spin FETs using a Monte Carlo model. The considered scheme uses a heavily doped layer at the metal/semiconductor interface to vary the Schottky barrier shape and enhance the tunneling current. It is found that spin flux (spin current density) is enhanced proportionally to the total current, and the variation of current spin polarization does not exceed 20%.

WITHDRAWN: Physics Based Analytical Modeling of Asymmetric Elevated Source Tunnel FET (AES-TFET) for Better Tunnel Junction Device (TJD) Performance

“…where, = mole fraction of Ge (8) Now using the above-mentioned boundary conditions equation 3 to 5 and equations 6 to 7, the co-efficient (equation 2) can be estimated as:…”

“…The typical energy band structure with ultra-thin barrier helped researchers to develop tunneling junction devices (TJD) using band to band (B2B) tunneling phenomenon. In this paper, prior to this work, several literatures were surveyed based on structural and material engineering [4][5][6][7][8][9][10][11][12][13][14]. The effect of homogeneous and heterogeneous material in tunneling junctions [15], effect of pocket intrinsic doping on single as well as multi gate tunneling FETs [16][17], effect of device performance based on various high-k materials [18], stress-strain effects in source-channel (n-channel) and drain-channel (pchannel) TJDs [19], usage of carbon nano-tubes (CNT) in tunneling FETs [20], nano-wire tunneling FETs [21], capacitive effects in modified TJD structures [22], various symmetric and asymmetric tunneling device structures has been studied to meet the earlier mentioned scaling issues and device performance factors.…”

Improved DC Performance Analysis of a Novel Asymmetric Extended Source Tunnel FET for Fast Switching Application

“…The typical energy band structure with ultra-thin barrier helped researchers to develop tunneling junction devices (TJD) using band to band tunneling (BTBT) phenomenon. In this paper, prior to this work, several literatures were surveyed based on structural and material engineering [4][5][6][7][8][9][10][11][12][13][14]. The effect of homogeneous and heterogeneous material in tunneling junctions [15], effect of pocket intrinsic doping on single as well as multi gate tunneling FETs [16][17], effect of device performance based on various high-k materials [18], stress-strain effects in source-channel (n-channel) and drain-channel (p-channel) TJDs [19], usage of carbon nano-tubes (CNT) in tunneling FETs [20], nano-wire tunneling FETs [21], capacitive effects in modified TJD structures [22], various symmetric and asymmetric tunneling device structures has been studied to meet the earlier mentioned scaling issues and device performance factors.…”

Dielectric-Modulated TFETs as Label-Free Biosensors

“…The International Technology Roadmap for Semiconductors in its document 'Beyond CMOS' published in 2015 reported the emerging devices based on structure or materials and charge/non-charge entity [4]. This include a number of devices like nanowire FET [5][6][7], carbon nanotube FET [8][9][10], graphene FET [11][12][13], TFET [14][15][16], spin FET [17][18][19] and negative gate capacitance FET [20,21]. Of these devices, TFETs have gained concentrated focus for low power applications due to their fundamental fabrication methodologies being similar to MOSFETs, and their ability to achieve sub-60 mV/dec subthreshold swing and lower off currents than MOSFETs.…”