Spin injection into semiconductors using dilute magnetic semiconductors

Gould, C.; Schmidt, G.; Richter, Georg; Fiederling, R.; Grabs, P.; Molenkamp, L. W.

doi:10.1016/s0169-4332(01)00903-5

Cited by 24 publications

(16 citation statements)

References 15 publications

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“…This novel control of magnetism has already been achieved electronically and optically in an InMnAs metal-insulator semiconductor structure at low temperatures [2,3] and electronically in Mn:Ge [4]. A number of recent reviews have covered the topics of spin injection, coherence length and magnetic properties of materials systems such as (Ga, Mn)As [5][6][7], (In, Mn)As [5][6][7] and (Co, Ti)O 2 [8] and the general areas of spin injection from metals into semiconductors and applications of the spintronic phenomena [9][10][11][12]. The current interest in magnetic semiconductors can be traced to difficulties in injecting spins from a ferromagnetic metal into a semiconductor [13,14], which idea can be traced to fruitful research in epitaxial preparation of ferromagnetic transitional metals on semiconductor substrates [15].…”

Section: Introduction-what Is Spintronics?mentioning

confidence: 99%

Advances in wide bandgap materials for semiconductor spintronics

Pearton

Abernathy

Norton

et al. 2003

Materials Science and Engineering: R: Reports

428

198

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Existing semiconductor electronic and photonic devices utilize the charge on electrons and holes in order to perform their specific functionality such as signal processing or light emission. The relatively new field of semiconductor spintronics seeks, in addition, to exploit the spin of charge carriers in new generations of transistors, lasers and integrated magnetic sensors. The ability to control of spin injection, transport and detection leads to the potential for new classes of ultra-low power, high speed memory, logic and photonic devices. The utility of such devices depends on the availability of materials with practical (>300 K) magnetic ordering temperatures. In this paper, we summarize recent progress in dilute magnetic semiconductors (DMS) such as (Ga, Mn)N, (Ga, Mn)P, (Zn, Mn)O and (Zn, Mn)SiGeN 2 exhibiting room temperature ferromagnetism, the origins of the magnetism and its potential applications in novel devices such as spin-polarized light emitters and spin field effect transistors. #

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Section: Introduction-what Is Spintronics?mentioning

confidence: 99%

Advances in wide bandgap materials for semiconductor spintronics

Pearton

Abernathy

Norton

et al. 2003

Materials Science and Engineering: R: Reports

428

198

View full text Add to dashboard Cite

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“…The spin-polarized injection and transport of charge carriers in semiconductors and heterostructures have been a topic of increasing importance in the design of new spintronic devices. The spin-polarized injection into inorganic semiconductors has been extensively studied [2,[6][7][8][9]. Since the first reported spin-polarized injection into organic semiconductors under room temperatures [10], there is a great deal of interests in extending spin-dependent properties to organic semiconductors [4,5,[11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Theoretical study on spin-polarized injection of electrical currents into polymer semiconductors

Zhao

Qiao

Zhang

et al. 2009

Current Applied Physics

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“…After the former activities were reduced (due to the success of GaN-based devices), the field of II-VI materials underwent a renaissance in the last few years since interesting (semi-)magnetic properties of II-VI compounds containing Mn and other magnetic materials were discovered. A spin-polarization of the charge carriers close to 100% and their injection into non-magnetic materials enable the fabrication of spin-polarized sources, spin-valves or spin-filters, applications which are lively discussed at present [3,4]. Purposive manufacturing and design of specific properties are important aspects in order to establish these applications in future.…”

Section: Introductionmentioning

confidence: 99%

Structure and relaxation effects in thin semiconducting films and quantum dots

Kumpf

Stahl

Gierz

et al. 2007

Phys. Status Solidi (c)

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InP(001) substrate and free-standing CdSe quantum dots on a ZnSe(001) surface. For the first system the influence of surface-oxidation on the relaxation behavior of the entire film was investigated by a comparison of capped and uncapped samples. We found that the critical thickness for pseudomorphic growth is more than doubled by the protective capping layers. For the second system under investigation a determination of the size and shape of the quantum dots was performed. They have a cylindrical shape with an almost constant diameter of ≈ 10 nm and a height of about 2 nm, whereby the lowermost region widens up to about 14 nm. The entire quantum dots are strained.

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Spin injection into semiconductors using dilute magnetic semiconductors

Cited by 24 publications

References 15 publications

Advances in wide bandgap materials for semiconductor spintronics

Advances in wide bandgap materials for semiconductor spintronics

Theoretical study on spin-polarized injection of electrical currents into polymer semiconductors

Structure and relaxation effects in thin semiconducting films and quantum dots

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