Spin lifetime from Hanle-effect measurements in samples with InAs quantum dots embedded in different AlxGa1−xAs matrices

Fürst, Josef; Pascher, H.; Abalmassov, V. A.; Шамирзаев, Т. С.; Журавлев, К. С.

doi:10.1088/0268-1242/20/2/019

Cited by 3 publications

(1 citation statement)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…( 28) (Hanle effect), both the electron lifetime and the spin-relaxation time τ s can be determined. [28,29,30,31,32,33] According to Eq. ( 28), an effect of the same kind exists also at zero magnetic field (H = 0) due to an in-plane electric field.…”

Section: Resultsmentioning

confidence: 99%

Coupled spin-charge drift-diffusion equations for the Rashba model subject to an in-plane electric field

Bryksin¹,

Kleinert

2007

Phys. Rev. B

View full text Add to dashboard Cite

Coupled spin-charge drift-diffusion equations are derived for a biased two-dimensional electron gas with weak Rashba spin-orbit interaction. The basic equations formally agree with recent results obtained for spin-orbit coupled small polarons. It is shown that effects of an in-plane electric field on a homogeneous spin system can completely be described by an associated in-plane magnetic field. Exploiting this analogy, we predict among other things the electric-field equivalent of the Hanle effect. 72.15.Gd

show abstract

Section: Resultsmentioning

confidence: 99%

Coupled spin-charge drift-diffusion equations for the Rashba model subject to an in-plane electric field

Bryksin¹,

Kleinert

2007

Phys. Rev. B

View full text Add to dashboard Cite

show abstract

Influence of buffer surface preparation on the quality of Al x Ga1-x As/GaAs quantum wells studied by optical orientation experiments

Mejía‐García

Winter

López‐López

et al. 2007

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

Oblique Hanle measurements of InAs∕GaAs quantum dot spin-light emitting diodes

Itskos

Harbord

Clowes

et al. 2006

Applied Physics Letters

View full text Add to dashboard Cite

We report on studies of electrical spin injection from ferromagnetic Fe contacts into semiconductor light emitting diodes containing single layers of InAs/ GaAs self-assembled quantum dots ͑QDs͒. An oblique magnetic field is used to manipulate the spin of the injected electrons in the semiconductor. This approach allows us to measure the injected steady-state spin polarization in the QDs, P spin as well as estimate the spin losses in the QD spin detector. After subtraction of magneto-optical effects not related to spin injection, we measured a P spin of 7.5% at 15 K and estimated an injected spin polarization before QD recombination of around 20%. © 2006 American Institute of Physics. ͓DOI: 10.1063/1.2163074͔ Electrical injection of spin polarized carriers from a magnetic contact into a semiconductor is essential for the implementation of spintronic devices.1,2 An accurate way to quantify the spin injection process is to utilize a spin-light emitting diode ͑spin-LED͒. Such a device uses a magnetic contact to electrically inject spin polarized carriers into a LED structure and employs the radiative selection rules to relate the degree of the circular polarization of the emitted light to the injected carrier spin polarization. Ferromagnetic metals are attractive as magnetic contacts in spin-LEDs due to their high Curie temperatures and their well-studied structural and magnetic properties. Recently, high spin injection efficiencies have been achieved in devices where a conventional ferromagnetic metal such as Fe, Co, Ni and their alloys were used to electrically inject spin-polarized electrons via a Schottky 3-5 or an oxide tunnel barrier 6-9 into a semiconductor LED structure.In the great majority of these devices, bulk semiconductors or quantum wells have been used as the recombination region. Spin relaxation in these is mainly caused by momentum-dependent spin interactions that are in general fast because of the availability of a continuum of energy states. These mechanisms should be inefficient in spin-LEDs based on quantum dots ͑QDs͒ due to their three-dimensional carrier confinement, which results in a discrete density of states. Yet, there have been few reports on electrical spin injection in QD-based spin-LEDs, 10-12 only one of which 12 used a ferromagnetic contact as injector. In the latter, a large magnetic field ͑B Ͼ 2 T͒ was used to bring the Fe film magnetization out of plane ͑hard axis͒ and inject electrons with spins along the surface normal ͑Faraday geometry͒. An injected spin polarization in the QDs, P spin of 5% was measured; importantly the polarization was insensitive to the temperature and persisted to 300 K, confirming the potential of quantum dots as spin detectors in spin-LEDs. We demonstrate here electrical spin injection from ferromagnetic Fe contacts into semiconductor LED structures containing single layers of InAs/ GaAs self-assembled quantum dots ͑QDs͒. The spins are injected along the sample layers ͑Fe easy axis͒ under application of a small oblique magnetic field ͑B Ͻ 100 mT͒. The ...

show abstract

Spin lifetime from Hanle-effect measurements in samples with InAs quantum dots embedded in different Al_xGa_1−xAs matrices

Cited by 3 publications

References 30 publications

Coupled spin-charge drift-diffusion equations for the Rashba model subject to an in-plane electric field

Coupled spin-charge drift-diffusion equations for the Rashba model subject to an in-plane electric field

Influence of buffer surface preparation on the quality of Al x Ga1-x As/GaAs quantum wells studied by optical orientation experiments

Oblique Hanle measurements of InAs∕GaAs quantum dot spin-light emitting diodes

Contact Info

Product

Resources

About