Spin-orbit interaction determined by antilocalization in an InSb quantum well

Abstract

The magnetoresistance at temperatures below 20 K in an n-InSb/ In 0.85 Al 0.15 Sb two-dimensional electron system is studied and described in terms of antilocalization due to quantum interference under strong spin-orbit interaction. The spin-orbit interaction coefficients are extracted by fitting the magnetoresistance data to an antilocalization theory distinguishing the Rashba and Dresselhaus contributions. A good agreement between magnetoresistance data and theory suggests a Rashba coefficient ͉␣͉Ϸ0.03 eV Å and a Dresselhaus coefficient ␥ Ϸ 490 eV Å 3 . A strong contribution from the Dresselhaus term leads to pronounced anisotropy in the energy splitting induced by spin-orbit interaction in the two-dimensional electron dispersion.

Spin-orbit interaction and phase coherence in lithographically defined bismuth wires

“…Further, τ so increases as W decreases. In semiconductor 2DESs, where the SOI is dominated by inversion asymmetry via the structural Rashba and Dresselhaus terms, experiments and theory have verified 20,[24][25][26][27][28][29] that τ so ∝ W −1/2 . A similar dependence has not been proposed in the 3-dimensional bulk for SOI in heavy metallic elements like Bi.…”

“…The Tdependence of τ φ weakens with decreasing T , indicative of saturation and of an intrinsic T -independent phase decoherence mechanism. Saturation of τ φ has been widely observed 19,20 in 2-dimensional samples and nanostructures in both semiconductors and metals, but as yet not in Bi.…”

“…However, experiments often find that at low T , τ φ saturates to a finite value τ 0 φ in many different systems. Saturation has been observed in twodimensional electron systems (2DESs) in semiconductor heterostructures and wires fabricated from 2DESs 19,20 , and in various metal wires and films 19 although not in Bi films [3][4][5][6][7]9 . The origin of τ 0 φ is still debated, with some arguments for magnetic scattering from trace magnetic impurities, electron interaction with long wavelength radiation, and fluctuations in the electromagnetic background 19,21 .…”

“…For structural SOI, theory predicts that in quasi-one-dimensional (Q1D) wires, τ so increases with decreasing wire width 24,25 , indeed experimentally supported for various 2DESs 20,[26][27][28][29] . As yet, no similar theoretical predictions exist for SOI due to heavy elements, present in bulk Bi.…”

Nonmonotonically tunable Rashba spin-orbit coupling by multiple-band filling control inSrTiO3-based interfaciald-electron gases

“…This negative background originates from B 2 magnetoresistivity primarily caused by the classical Lorentz force 27,32 . To better illustrate the WL/WAL quantum corrections, it is justifiable to subtract this classical background, as adopted previously for various WL/WAL systems 27,[34][35][36] . The results are shown in Figs.…”