2020
DOI: 10.1063/5.0020925
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Spin–orbit torque-induced multiple magnetization switching behaviors in synthetic antiferromagnets

Abstract: This paper studies spin–orbit torque (SOT) switching behaviors in synthetic antiferromagnet (SyAF) structures of Ta/[Pt/Co]m/Ru/[Co/Pt]n, which are asymmetric between the upper multilayer (UML) and the bottom multilayer (BML). The SOT-induced magnetization switching loops show multiple transitions of switching orientations between clockwise and anticlockwise with an increasing in-plane magnetic field, determined by the effects of the Dzyaloshinskii–Moriya interaction from both the BML and UML in the different … Show more

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Cited by 18 publications
(9 citation statements)
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“…[21,39] It also showed that the DMI will induced multiple transitions of switching orientations between different chirality states in the spin-orbit torque-induced magnetization switching. [40] Therefore, such asymmetric phenomenon would reasonably originate from a DMI-like behavior.…”
Section: Asymmetric Occurrence Frequency Of Coupled Vorticesmentioning
confidence: 99%
“…[21,39] It also showed that the DMI will induced multiple transitions of switching orientations between different chirality states in the spin-orbit torque-induced magnetization switching. [40] Therefore, such asymmetric phenomenon would reasonably originate from a DMI-like behavior.…”
Section: Asymmetric Occurrence Frequency Of Coupled Vorticesmentioning
confidence: 99%
“…Recently, there have been reported of new antiferromagnetic materials with a high response speed, low power consumption, and high noise immunity to an external magnetic field, which can be used in the field of spintronics [87][88][89][90][91][92][93][94][95][96][97][98][99]. Such antiferromagnets can be divided into two types: collinear and noncollinear ones.…”
Section: Noncollinear Antiferromagnets Based On Mn3z Heusler Alloysmentioning
confidence: 99%
“…Spin-orbit torques [1][2][3][4][5][6][7][8] in heavy metal/ferromagnet (HM/FM) systems have become a powerful approach to achieving a pure current control of magnetization switch for building an energy-efficient SOT-magnetoresistive random-access memory (SOT-MRAM) [9] and excitation of coherent spin waves for magnon-based logic devices [10,11] or spin synchronization-based neuromorphic computing [12][13][14].…”
Section: Introductionmentioning
confidence: 99%