Spin-orbit torque MRAM read reliability

Kazama, H.; Kawahara, Takayuki

doi:10.1109/intmag.2017.8007571

Cited by 3 publications

(2 citation statements)

References 2 publications

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“…SOT-MRAM read operation requires discharge from the parasitic capacitance of the bit lines, and the fast discharge required for high-speed read requires a large potential difference, which in turn requires a large read current. As a problem to be solved for this purpose, we present the readdisturbance problem due to SOT that has not been considered [11]. This is because a large read current causes read disturbance.…”

Section: Introductionmentioning

confidence: 99%

Examination of Magnetization Switching Behavior by Bi-Directional Read of Spin-Orbit-Torque MRAM

Kishi

Yamada

et al. 2022

IEEE Trans. Magn.

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We propose a read-reliability model to construct a bi-directional stabilized spin-orbit-torque magnetoresistive random-access memory (SOT-MRAM) structure. Since this model withstands magnetization switching with 10 times the current compared with the conventional SOT-MRAM structure, it enables low power-consumption operation while maintaining read reliability. We used various materials with different axes of easy magnetization as ferromagnetic materials in the proposed model, and confirmed that all the materials had disturbance reduction of 10 times or more. The magnitude of the coercive force of the ferromagnetic material affected this reduction. We also evaluated the effectiveness of the proposed model regarding disturbance reduction for various device shapes and found there were differences in this effectiveness because the behavior of magnetization switching differs depending on the shape and that vortex magnetization affects the model. However, considering the array configuration of the proposed model, the number of memory cells was limited to about 1000; therefore, a more optimal configuration is required.

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Section: Introductionmentioning

confidence: 99%

Examination of Magnetization Switching Behavior by Bi-Directional Read of Spin-Orbit-Torque MRAM

Kishi

Yamada

et al. 2022

IEEE Trans. Magn.

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“…2) Power-saving devices using spintronics, such as spin-transfer torque magnetoresistive random access memory. [3][4][5][6] and spin-orbit torque magnetoresistive random access memory, [7][8][9][10] have also been investigated. As mentioned above, spintronics materials are being investigated for use in power generation and power-saving devices to achieve a sustainable society.…”

Section: Introductionmentioning

confidence: 99%

Evaluation and study of spin Seebeck effect in Pt/Y₃Fe₅O₁₂/Gd₃Ga₅O₁₂ and Pt/Y₃Fe₅O₁₂/sapphire systems

Ke¹,

Yamamoto

Kawahara³

2020

Jpn. J. Appl. Phys.

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Utilization of the spin Seebeck effect, a method for obtaining clean natural energy, is attracting more and more attention. We investigated the spin Seebeck voltage in relation to the saturation magnetization in yttrium iron garnet (YIG). We found that it is not proportional to saturation magnetization in YIG, indicating the existence of spin-current conductance in YIG. Pt/YIG samples with the same interface roughness and different structures exhibited different spin Seebeck voltages. The difference in the minimum YIG thicknesses for the saturation of the spin Seebeck voltage of Pt/YIG/gadolinium gallium garnet and Pt/YIG/sapphire structures was estimated on the basis of the relationship between the proportionality constant and the thickness dependence. The crystallinity of the YIG on these two substrates was investigated by X-ray diffraction spectrum observation. The spin-current conductance in Pt/YIG/substrates was found to be affected by the crystallinity of the YIG films.

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Bi-directional read method to reduce SOT-specific read disturbance for highly reliable SOT-MRAM

Yamada

Kishi

Kawahara

2022

2022 IEEE International Memory Workshop (IMW)

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Spin-orbit torque MRAM read reliability

Cited by 3 publications

References 2 publications

Examination of Magnetization Switching Behavior by Bi-Directional Read of Spin-Orbit-Torque MRAM

Examination of Magnetization Switching Behavior by Bi-Directional Read of Spin-Orbit-Torque MRAM

Evaluation and study of spin Seebeck effect in Pt/Y₃Fe₅O₁₂/Gd₃Ga₅O₁₂ and Pt/Y₃Fe₅O₁₂/sapphire systems

Bi-directional read method to reduce SOT-specific read disturbance for highly reliable SOT-MRAM

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Spin-orbit torque MRAM read reliability

Cited by 3 publications

References 2 publications

Examination of Magnetization Switching Behavior by Bi-Directional Read of Spin-Orbit-Torque MRAM

Examination of Magnetization Switching Behavior by Bi-Directional Read of Spin-Orbit-Torque MRAM

Evaluation and study of spin Seebeck effect in Pt/Y3Fe5O12/Gd3Ga5O12 and Pt/Y3Fe5O12/sapphire systems

Bi-directional read method to reduce SOT-specific read disturbance for highly reliable SOT-MRAM

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Evaluation and study of spin Seebeck effect in Pt/Y₃Fe₅O₁₂/Gd₃Ga₅O₁₂ and Pt/Y₃Fe₅O₁₂/sapphire systems